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ADS8507IBDWR

Texas Instruments · Analog To Digital Converters (ADCs) · SOIC-28-300mil

ADS8507IBDWR from Texas Instruments, in a SOIC-28-300mil. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 R1IN input Analog input; the input range is set by how R1IN is connected per Table 1 (for ±10 V it connects to VIN via 200 Ω, for 0 to 5 V it connects to AGND, and for 0 to 4 V it connects to VIN via 200 Ω... see note).
2 AGND1 power_in Analog sense ground used internally as the ground reference point, with minimal current flow.
3 R2IN input Analog input; the input range is set by how R2IN is connected per Table 1.
4 CAP passive Reference buffer output that requires a 2.2-µF tantalum capacitor to ground.
5 REF bidirectional Reference input/output that outputs the internal 2.5-V reference or can be driven by an external reference, and must be bypassed to ground with a 2.2-µF tantalum capacitor in both cases.
6 AGND2 power_in Analog ground.
7 SB/BTC input Selects the output data format: high gives straight binary output and low gives binary 2's complement output.
8 EXT/INT input Selects the external or internal data clock: high synchronizes output data to the DATACLK input, and low makes a convert command start transmission of the previous conversion's data with 16 clock pulses on DATACLK.
9 D7 tri_state Parallel data bit 7 when BYTE is high or bit 15 (MSB) when BYTE is low; high impedance when CS is high and/or R/C is low, and leave unconnected when using serial output.
10 D6 tri_state Parallel data bit 6 when BYTE is high or bit 14 when BYTE is low; high impedance when CS is high and/or R/C is low.
11 D5 tri_state Parallel data bit 5 when BYTE is high or bit 13 when BYTE is low; high impedance when CS is high and/or R/C is low.
12 D4 tri_state Parallel data bit 4 when BYTE is high or bit 12 when BYTE is low; high impedance when CS is high and/or R/C is low.
13 D3 tri_state Parallel data bit 3 when BYTE is high or bit 11 when BYTE is low; high impedance when CS is high and/or R/C is low.
14 DGND power_in Digital ground.
15 D2 tri_state Parallel data bit 2 when BYTE is high or bit 10 when BYTE is low; high impedance when CS is high and/or R/C is low.
16 D1 tri_state Parallel data bit 1 when BYTE is high or bit 9 when BYTE is low; high impedance when CS is high and/or R/C is low.
17 D0 tri_state Parallel data bit 0 (LSB) when BYTE is high or bit 8 when BYTE is low; high impedance when CS is high and/or R/C is low.
18 DATACLK bidirectional Input or output depending on the EXT/INT level; output data is synchronized to it, and in external-clock-off mode (EXT/INT low) it transmits 16 pulses after each conversion and stays low between conversions.
19 SDATA output Serial data output synchronized to DATACLK with format set by SB/BTC; after 16 bits in external clock mode it outputs the TAG input level while CS is low and R/C is high.
20 TAG input Tag input for the external clock mode whose digital level is output on SDATA after the 16 data bits, with a delay that depends on the external clock mode.
21 BYTE input Selects the 8 most significant bits (low) or the 8 least significant bits (high) on the parallel output pins.
22 R/C input Read/convert input: with CS low, a falling edge puts the sample-and-hold into hold and starts a conversion, and when EXT/INT is low it also initiates transmission of the previous conversion's data.
23 CS input Chip select internally ORed with R/C; when R/C is low, a falling edge starts a new conversion, and if EXT/INT is low the same edge starts serial transmission of the previous result.
24 BUSY output Goes low at the start of a conversion and stays low until the conversion is complete and the digital outputs have been updated.
25 PWRD input Power-down input: when high, conversions are inhibited and power consumption is significantly reduced while previous results are held in the output shift register.
26 REFD input When high, shuts down the internal reference, so an external reference is required for conversions.
27 VANA power_in Analog supply, nominally +5 V; decouple with 0.1-µF ceramic and 10-µF tantalum capacitors.
28 VDIG power_in Digital supply, nominally +5 V, connected directly to pin 27; must be less than or equal to VANA.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package SOIC-28-300mil
Category ADC/DAC/Data Conversion
Pins 28

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Analog input R1IN, absolute voltage -25 25 V 2
Analog input R2IN, absolute voltage -25 25 V 2
Ground voltage differences (DGND, AGND2) -0.3 0.3 V 2
Analog supply VANA, absolute maximum VANA 6 V 2
Digital supply VDIG, absolute maximum VDIG 6 V 2
Maximum junction temperature 165 °C 2
Storage temperature range -65 150 °C 2
Internal power dissipation 700 mW 2
Lead temperature (soldering) 260 °C Soldering, 1.6 mm from case, 10 seconds 2
Voltage range, ±10 V input range -10 10 V See Table 1 2
Voltage range, 0 V to 5 V input range 0 5 V See Table 1 2
Voltage range, 0 V to 4 V input range 0 4 V See Table 1 2
Integral linearity error (INL) INL -1.5 1.5 LSB 2
Differential linearity error (DNL) DNL -1 1.5 LSB 3
Gain error -0.1 0.1 % 3
Full scale error -0.25 0.25 % 3
Full scale error drift -5 5 ppm/°C 3
Full scale error, external 2.5-V reference -0.25 0.25 % Ext. 2.5-V Ref 3
Full scale error drift, external 2.5-V reference -0.5 0.5 ppm/°C Ext. 2.5-V Ref 3
Bipolar zero error -5 5 mV ±10 V Range 3
Bipolar zero error drift -0.5 0.5 ppm/°C ±10 V Range 3
Unipolar zero error -3 3 mV 0 V to 5 V, 0 V to 4 V Ranges 3
Unipolar zero error drift -0.5 0.5 ppm/°C 0 V to 5 V, 0 V to 4 V Ranges 3
Power supply sensitivity -8 8 LSB +4.75 V < VS < +5.25 V (VDIG = VANA = VS) 3
Spurious-free dynamic range (SFDR) 96 102 dB fIN = 1 kHz, ±10 V 3
Signal-to-(noise+distortion) (SINAD) SINAD 87 89.9 dB fIN = 1 kHz, ±10 V 3
Signal-to-noise (SNR) SNR 87 89.9 dB 3
Internal reference voltage 2.48 2.5 2.52 V No load 3
External reference voltage range for specified linearity 2.3 2.5 2.7 V 3
Low-level input voltage VIL -0.3 0.8 V 3
High-level input voltage VIH 2 V 3
Low-level input current IIL -10 10 µA VIL = 0 V 4
High-level input current IIH -10 10 µA VIH = 5 V 4
High-Z state leakage current -5 5 µA High-Z state, VOUT = 0 V to VDIG 4
Digital voltage VDIG 4.75 5 5.25 V Must be ≤ VANA 4
Analog voltage VANA 4.75 5 5.25 V 4
Power dissipation 24 30 mW VANA = VDIG = 5 V, fS = 40 kHz 4
Power dissipation in power-down mode 50 µW PWRD and REFD High 4
Specified performance temperature range -40 85 °C 4
Derated performance temperature range -55 125 °C 4
SO package thermal resistance (ΘJA) ΘJA 46 °C/W SO package 4

CAD (KiCad official)

  • Symbol: ADS8507IBDWR
  • Footprint: Package_SO:SOIC-28W_7.5x17.9mm_P1.27mm
  • 3D model: SOIC-28-300mil (KiCad packages3D, STEP)
  • 3D model files: ads8507ibdwr-etched.step / ads8507ibdwr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ads8507ibdwr.step / ads8507ibdwr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (37 pp, sha256 b186789b078b48ab, retrieved 2026-10-31, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF