component
ADM7151ARDZ-04
Public Made by Adomby adom
Analog Devices Linear Voltage Regulators (LDO), SOIC-8-EP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ADM7151ARDZ-04
Analog Devices · Linear Voltage Regulators (LDO) · SOIC-8-EP
ADM7151ARDZ-04 from Analog Devices, in a SOIC-8-EP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VREG | power_out | Regulated input supply to the LDO amplifier; bypass VREG to GND with a 10 µF or greater capacitor and do not connect a load to ground. |
| 2 | VOUT | power_out | Regulated output voltage; bypass VOUT to GND with a 10 µF or greater capacitor. |
| 3 | BYP | passive | Low-noise bypass capacitor; connect a 1 µF capacitor to GND to reduce noise and do not connect a load to ground. |
| 4 | GND | power_in | Ground connection. |
| 5 | REF_SENSE | input | External resistor divider input used to set the output voltage, where VOUT = VREF × (R1 + R2)/R2 and VREF = 1.5 V. |
| 6 | REF | output | Low-noise reference voltage output; bypass to GND with a 1 µF capacitor, short REF_SENSE to REF for fixed output voltages, and do not connect a load to ground. |
| 7 | EN | input | Enable input; drive high to turn the regulator on and low to turn it off, and connect to VIN for automatic startup. |
| 8 | VIN | power_in | Regulator input supply; bypass VIN to GND with a 10 µF or greater capacitor. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Analog Devices |
| Package | SOIC-8-EP |
| Category | Power Management ICs |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input voltage range | VIN | 4.5 | 16 | V | 3 | ||
| Operating supply current | IGND | 4.3 | 7 | mA | IOUT = 0 µA | 3 | |
| Operating supply current | IGND | 8.6 | 12 | mA | IOUT = 800 mA | 3 | |
| Shutdown current | IIN-SD | 0.1 | 3 | µA | VEN = GND | 3 | |
| Voltage accuracy | VOUT | -1 | 1 | % | IOUT = 10 mA | 3 | |
| Voltage accuracy over line, load and temperature | VOUT | -2 | 2 | % | 1 mA < IOUT < 800 mA, over line, load and temperature | 3 | |
| Line regulation | ΔVOUT/ΔVIN | -0.01 | 0.01 | %/V | VIN = 4.5 V to 16 V | 3 | |
| Load regulation | ΔVOUT/ΔIOUT | 0.5 | 1 | %/A | IOUT = 1 mA to 800 mA | 3 | |
| VOUT current limit threshold | ILIMIT | 1 | 1.3 | 1.6 | A | 3 | |
| Dropout voltage | VDROPOUT | 0.3 | 0.6 | V | IOUT = 400 mA, VOUT = 5 V | 3 | |
| Dropout voltage | VDROPOUT | 0.6 | 1.2 | V | IOUT = 800 mA, VOUT = 5 V | 3 | |
| EN input leakage current | IEN-LKG | 0.1 | 1 | µA | VEN = VIN or GND | 4 | |
| Minimum input capacitance | CIN | 7 | µF | TA = −40°C to +125°C | 4 | ||
| Minimum regulator capacitance | CREG | 7 | µF | TA = −40°C to +125°C | 4 | ||
| Minimum output capacitance | COUT | 7 | µF | TA = −40°C to +125°C | 4 | ||
| Minimum bypass capacitance | CBYP | 0.1 | µF | TA = −40°C to +125°C | 4 | ||
| Minimum reference capacitance | CREF | 0.7 | µF | TA = −40°C to +125°C | 4 | ||
| Capacitor ESR (CREG, COUT, CIN, CREF) | RESR | 0.001 | 0.2 | Ω | TA = −40°C to +125°C | 4 | |
| Capacitor ESR (CBYP) | RESR | 0.001 | 2 | Ω | TA = −40°C to +125°C | 4 | |
| VIN to GND | -0.3 | 18 | V | 5 | |||
| VREG to GND | -0.3 | 6 | V | max is VIN or +6 V, whichever is less | 5 | ||
| VOUT to GND | -0.3 | 6 | V | max is VREG or +6 V, whichever is less | 5 | ||
| VOUT to BYP | -0.3 | 0.3 | V | ±0.3 V | 5 | ||
| EN to GND | -0.3 | 18 | V | 5 | |||
| BYP to GND | -0.3 | 6 | V | max is VREG or +6 V, whichever is less | 5 | ||
| REF to GND | -0.3 | 6 | V | max is VREG or +6 V, whichever is less | 5 | ||
| REF_SENSE to GND | -0.3 | 6 | V | 5 | |||
| Storage temperature range | TSTG | -65 | 150 | °C | 5 | ||
| Junction temperature | TJ | 150 | °C | 5 | |||
| Operating ambient temperature range | TA | -40 | 125 | °C | 5 | ||
| Junction to ambient thermal resistance (8-Lead SOIC) | θJA | 36.9 | °C/W | 8-lead SOIC, worst-case, device soldered in circuit board | 5 | ||
| Junction to case thermal resistance (8-Lead SOIC) | θJC | 27.1 | °C/W | 8-lead SOIC, worst-case, device soldered in circuit board | 5 | ||
| Junction to board thermal characterization parameter (8-Lead SOIC) | ΨJB | 18.6 | °C/W | 8-lead SOIC, worst-case, device soldered in circuit board | 5 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | of copper used to solder the package GND pin and exposed pad | 19 |
CAD (KiCad official)
- Symbol:
ADM7151ARDZ-04 - Footprint:
Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.29x3mm - 3D model: SOIC-8-EP (KiCad packages3D, STEP)
- 3D model files:
adm7151ardz-04-etched.step/adm7151ardz-04-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);adm7151ardz-04.step/adm7151ardz-04.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Analog Devices datasheet (24 pp, sha256
e2d199a9e640dbfe, retrieved 2026-10-28, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ADM7151ARDZ-04
**Analog Devices** · Linear Voltage Regulators (LDO) · SOIC-8-EP
ADM7151ARDZ-04 from Analog Devices, in a SOIC-8-EP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VREG | power_out | Regulated input supply to the LDO amplifier; bypass VREG to GND with a 10 µF or greater capacitor and do not connect a load to ground. |
| 2 | VOUT | power_out | Regulated output voltage; bypass VOUT to GND with a 10 µF or greater capacitor. |
| 3 | BYP | passive | Low-noise bypass capacitor; connect a 1 µF capacitor to GND to reduce noise and do not connect a load to ground. |
| 4 | GND | power_in | Ground connection. |
| 5 | REF_SENSE | input | External resistor divider input used to set the output voltage, where VOUT = VREF × (R1 + R2)/R2 and VREF = 1.5 V. |
| 6 | REF | output | Low-noise reference voltage output; bypass to GND with a 1 µF capacitor, short REF_SENSE to REF for fixed output voltages, and do not connect a load to ground. |
| 7 | EN | input | Enable input; drive high to turn the regulator on and low to turn it off, and connect to VIN for automatic startup. |
| 8 | VIN | power_in | Regulator input supply; bypass VIN to GND with a 10 µF or greater capacitor. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Analog Devices |
| Package | SOIC-8-EP |
| Category | Power Management ICs |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input voltage range | VIN | 4.5 | | 16 | V | | 3 |
| Operating supply current | IGND | | 4.3 | 7 | mA | IOUT = 0 µA | 3 |
| Operating supply current | IGND | | 8.6 | 12 | mA | IOUT = 800 mA | 3 |
| Shutdown current | IIN-SD | | 0.1 | 3 | µA | VEN = GND | 3 |
| Voltage accuracy | VOUT | -1 | | 1 | % | IOUT = 10 mA | 3 |
| Voltage accuracy over line, load and temperature | VOUT | -2 | | 2 | % | 1 mA < IOUT < 800 mA, over line, load and temperature | 3 |
| Line regulation | ΔVOUT/ΔVIN | -0.01 | | 0.01 | %/V | VIN = 4.5 V to 16 V | 3 |
| Load regulation | ΔVOUT/ΔIOUT | | 0.5 | 1 | %/A | IOUT = 1 mA to 800 mA | 3 |
| VOUT current limit threshold | ILIMIT | 1 | 1.3 | 1.6 | A | | 3 |
| Dropout voltage | VDROPOUT | | 0.3 | 0.6 | V | IOUT = 400 mA, VOUT = 5 V | 3 |
| Dropout voltage | VDROPOUT | | 0.6 | 1.2 | V | IOUT = 800 mA, VOUT = 5 V | 3 |
| EN input leakage current | IEN-LKG | | 0.1 | 1 | µA | VEN = VIN or GND | 4 |
| Minimum input capacitance | CIN | 7 | | | µF | TA = −40°C to +125°C | 4 |
| Minimum regulator capacitance | CREG | 7 | | | µF | TA = −40°C to +125°C | 4 |
| Minimum output capacitance | COUT | 7 | | | µF | TA = −40°C to +125°C | 4 |
| Minimum bypass capacitance | CBYP | 0.1 | | | µF | TA = −40°C to +125°C | 4 |
| Minimum reference capacitance | CREF | 0.7 | | | µF | TA = −40°C to +125°C | 4 |
| Capacitor ESR (CREG, COUT, CIN, CREF) | RESR | 0.001 | | 0.2 | Ω | TA = −40°C to +125°C | 4 |
| Capacitor ESR (CBYP) | RESR | 0.001 | | 2 | Ω | TA = −40°C to +125°C | 4 |
| VIN to GND | | -0.3 | | 18 | V | | 5 |
| VREG to GND | | -0.3 | | 6 | V | max is VIN or +6 V, whichever is less | 5 |
| VOUT to GND | | -0.3 | | 6 | V | max is VREG or +6 V, whichever is less | 5 |
| VOUT to BYP | | -0.3 | | 0.3 | V | ±0.3 V | 5 |
| EN to GND | | -0.3 | | 18 | V | | 5 |
| BYP to GND | | -0.3 | | 6 | V | max is VREG or +6 V, whichever is less | 5 |
| REF to GND | | -0.3 | | 6 | V | max is VREG or +6 V, whichever is less | 5 |
| REF_SENSE to GND | | -0.3 | | 6 | V | | 5 |
| Storage temperature range | TSTG | -65 | | 150 | °C | | 5 |
| Junction temperature | TJ | | | 150 | °C | | 5 |
| Operating ambient temperature range | TA | -40 | | 125 | °C | | 5 |
| Junction to ambient thermal resistance (8-Lead SOIC) | θJA | | 36.9 | | °C/W | 8-lead SOIC, worst-case, device soldered in circuit board | 5 |
| Junction to case thermal resistance (8-Lead SOIC) | θJC | | 27.1 | | °C/W | 8-lead SOIC, worst-case, device soldered in circuit board | 5 |
| Junction to board thermal characterization parameter (8-Lead SOIC) | ΨJB | | 18.6 | | °C/W | 8-lead SOIC, worst-case, device soldered in circuit board | 5 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | | of copper used to solder the package GND pin and exposed pad | 19 |
## CAD (KiCad official)
- Symbol: `ADM7151ARDZ-04`
- Footprint: `Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.29x3mm`
- 3D model: SOIC-8-EP (KiCad packages3D, STEP)
- 3D model files: `adm7151ardz-04-etched.step` / `adm7151ardz-04-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `adm7151ardz-04.step` / `adm7151ardz-04.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Analog Devices datasheet](https://www.analog.com/media/en/technical-documentation/data-sheets/ADM7151.pdf) (24 pp, sha256 `e2d199a9e640dbfe`, retrieved 2026-10-28, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/adm7151ardz-04-datasheet.pdf)