ADM3061EBRZ from Analog Devices, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	RO	output	Receiver output data is high when (A − B) ≥ −30 mV and low when (A − B) ≤ −200 mV, and is tristated when the receiver is disabled (RE driven high).
2	RE	input	Active-low receiver enable input: driving it low enables the receiver and driving it high disables the receiver.
3	DE	input	Driver enable input: a high level enables the driver differential outputs A and B, and a low level places the driver output into a high impedance state.
4	DI	input	Transmit data input: data to be transmitted by the driver is applied to this pin.
5	GND	power_in	Ground reference pin for the device.
6	A	bidirectional	Noninverting driver output and receiver input; when the driver is disabled or VCC is powered down, the pin is put into a high impedance state to avoid overloading the bus.
7	B	bidirectional	Inverting driver output and receiver input; when the driver is disabled or VCC is powered down, the pin is put into a high impedance state to avoid overloading the bus.
8	VCC	power_in	Power supply rated 3.0 V to 5.5 V; a 0.1 µF decoupling capacitor between VCC and GND is recommended.

Key specifications

Parameter	Value
Manufacturer	Analog Devices
Package	SOIC-8
Category	Communication Interface Chip/UART/485/232
Pins	8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
No Load Supply Current (DE = VIO, RE = 0 V)	ICC		3.5	7.5	mA	DE = VIO1, RE = 0 V	4
No Load Supply Current (DE = VIO, RE = VIO)	ICC		3.5	7.5	mA	DE = VIO, RE = VIO	4
No Load Supply Current (DE = 0 V, RE = 0 V)	ICC		3	4.5	mA	DE = 0 V, RE = 0 V	4
Supply Current, Data Rate = 500 kbps (VCC ≥ 4.5 V)	ICC		100	165	mA	RL = 54 Ω, DE = VIO, RE = 0 V (VCC ≥ 4.5 V)	4
Supply Current, Data Rate = 500 kbps (VCC = 3.0 V)	ICC		56	74	mA	RL = 54 Ω, DE = VIO, RE = 0 V (VCC = 3.0 V)	4
Supply Current in Shutdown Mode	ISHDN		210	450	µA	DE = 0 V, RE = VIO	4
Output Voltage, Loaded (VCC ≥ 3.0 V, RL = 50 Ω)	/VOD2/	2	2.5		V	VCC ≥ 3.0 V, RL = 50 Ω, see Figure 38	4
Output Voltage, Loaded (VCC ≥ 3.0 V, RS-485 RL = 27 Ω)	/VOD2/	1.5	2.1		V	VCC ≥ 3.0 V, RL = 27 Ω (RS-485), see Figure 38	4
Output Voltage, Loaded (VCC ≥ 4.5 V, RL = 50 Ω)	/VOD2/	2.1	3.5		V	VCC ≥ 4.5 V, RL = 50 Ω, see Figure 38	4
Output Voltage, Loaded (VCC ≥ 4.5 V, RS-485 RL = 27 Ω)	/VOD2/	2.1	3		V	VCC ≥ 4.5 V, RL = 27 Ω (RS-485), see Figure 38	4
Output Voltage over Common-Mode Range (VCC ≥ 3.0 V)	/VOD3/	1.5	2.1		V	VCC ≥ 3.0 V, −7 V ≤ VCM ≤ +12 V, see Figure 39	4
Output Voltage over Common-Mode Range (VCC ≥ 4.5 V)	/VOD3/	2.1	3		V	VCC ≥ 4.5 V, −7 V ≤ VCM ≤ +12 V, see Figure 39	4
Change in Magnitude of Differential Output Voltage	∆/VOD/			0.2	V	RL = 27 Ω or 50 Ω, see Figure 38	4
Common-Mode Output Voltage	VOC	1.6		3	V	RL = 27 Ω or 50 Ω, see Figure 38	4
Change in Common-Mode Voltage (Complementary Output States)	∆/VOC/			0.2	V	RL = 27 Ω or 50 Ω, see Figure 38	4
Output Short-Circuit Current	IOS	-250		250	mA	−7 V < output voltage (VOUT) < +12 V	4
Output Leakage (Y, Z), high	IO			100	µA	DE = 0 V, RE = 0 V, VCC = 0 V or 3.6 V, input voltage (VIN) = 12 V	4
Output Leakage (Y, Z), low	IO	-100			µA	DE = 0 V, RE = 0 V, VCC = 0 V or 3.6 V, VIN = −7 V	4
Input Current (logic inputs DE, RE, DI)	II	-2		2	µA	DE, RE, DI, 1.62 V ≤ VIO ≤ 5.5 V, 0 V ≤ VIN ≤ VIO	4
Differential Input Threshold Voltage	VTH	-200	-125	-30	mV	−7 V < VCM < +12 V	4
Input Current (A, B) at VIN = 12 V	II	0.1		0.25	mA	DE = 0 V, VCC = powered/unpowered, VIN = 12 V	4
Input Current (A, B) at VIN = −7 V	II	-0.2		-0.1	mA	DE = 0 V, VCC = powered/unpowered, VIN = −7 V	4
Line Input Resistance	RIN	48	96		kΩ	−7 V ≤ VCM ≤ +12 V	4
VCC to GND				6	V		8
Digital Input and Output Voltage (DE, RE, DI, and RO), lower limit		-0.3			V	Referenced to VIO + 0.3 V upper limit (VIO = VCC on ADM3061E)	8
Driver Output and Receiver Input Voltage		-9		14	V		8
Operating Temperature Range (B grade)		-40		125	°C	B grade	8
Storage Temperature Range		-65		150	°C		8
Continuous Total Power Dissipation (8-Lead SOIC_N)				0.225	W	8-Lead SOIC_N	8
Maximum Junction Temperature	TJ			150	°C		8
Lead Temperature, Soldering				300	°C	10 sec	8
Lead Temperature, Vapor Phase				215	°C	60 sec	8
Lead Temperature, Infrared				220	°C	15 sec	8
ESD IEC 61000-4-2 Contact Discharge (bus pins)		-12		12	kV	Bus pins (A, B, Y, Z)	8
ESD IEC 61000-4-2 Air Discharge (bus pins)		-12		12	kV	10 Positive and 10 Negative Discharges	8
ESD IEC 61000-4-2 Air Discharge (bus pins)		-15		15	kV	Three Positive or Three Negative Discharges	8
ESD Human Body Model (bus pins)		-30		30	kV	On the Bus Pins (A, B, Y, Z)	8
ESD Human Body Model (all other pins)		-8		8	kV	All Other Pins	8
Thermal Resistance Junction-to-Ambient (R-8, SOIC_N)	θJA		110.88		°C/W	Package R-8; JEDEC 2S2P thermal test board with no bias	8
Thermal Resistance Junction-to-Case (R-8, SOIC_N)	θJC		58.63		°C/W	Package R-8; JEDEC 2S2P thermal test board with no bias	8
Supply Voltage VCC	VCC	3		5.5	V	Operating range as stated in Specifications header (VCC = 3.0 V to 5.5 V)	4

CAD (KiCad official)

Symbol: ADM3061EBRZ
Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
3D model: SOIC-8 (KiCad packages3D, STEP)
3D model files: adm3061ebrz-etched.step / adm3061ebrz-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); adm3061ebrz.step / adm3061ebrz.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Analog Devices datasheet (25 pp, sha256 7ce4130f0f613a46, retrieved 2026-10-30, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

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ADM3061EBRZ

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