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AD5174BRMZ-10

Analog Devices · Digital Potentiometers · MSOP-10

AD5174BRMZ-10 from Analog Devices, in a MSOP-10. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VDD power_in Positive power supply (2.7 V to 5.5 V single supply), to be decoupled with 0.1 μF ceramic and 10 μF capacitors.
2 A passive Terminal A of the RDAC, with voltage range VSS ≤ VA ≤ VDD.
3 W passive Wiper terminal of the RDAC, with voltage range VSS ≤ VW ≤ VDD.
4 VSS power_in Negative supply, connected to 0 V for single-supply applications and decoupled with 0.1 μF ceramic and 10 μF capacitors.
5 EXT_CAP passive External capacitor pin: connect a 1 μF capacitor (voltage rating ≥7 V) between EXT_CAP and VSS.
6 GND power_in Ground pin, logic ground reference.
7 SDO output Serial data output for daisy-chain or readback mode; open-drain output that requires an external pull-up resistor even if not used.
8 DIN input Serial data line used with SCLK to clock data into or out of the 16-bit input register.
9 SCLK input Serial clock input; data is clocked into the shift register on the falling edge, at rates up to 50 MHz.
10 SYNC input Falling-edge frame synchronization signal; when low it enables the shift register, and the selected register updates on the SYNC rising edge after the 16th clock cycle.

Key specifications

Parameter Value
Manufacturer Analog Devices
Package MSOP-10
Category Data Converters
Pins 10

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Nominal Resistance RAB 10 kΩ 10 kΩ nominal, AD5174BRMZ-10 1
Nominal Resistor Tolerance -15 15 % 3
Resistance Temperature Coefficient 35 ppm/°C Code = full scale 3
Resistor Integral Nonlinearity R-INL -1 1 LSB /VDD − VSS/ = 3.6 V to 5.5 V 3
Resistor Integral Nonlinearity R-INL -1 1.5 LSB /VDD − VSS/ = 3.3 V to 3.6 V 3
Resistor Integral Nonlinearity R-INL -2.5 2.5 LSB /VDD − VSS/ = 2.7 V to 3.3 V 3
Resistor Differential Nonlinearity R-DNL -1 1 LSB 3
Wiper Resistance RW 35 70 Ω Code = zero scale 3
Input Logic High VINH 2 V 3
Input Logic Low VINL 0.8 V 3
Input Current IIN -1 1 μA 3
Output Voltage Low VOL 0.4 V RPULL_UP = 2.2 kΩ to VDD, VDD = 2.7 V to 5.5 V, VSS = 0 V 3
Output Voltage Low VOL 0.6 V RPULL_UP = 2.2 kΩ to VDD, VDD = 2.5 V to 2.75 V, VSS = −2.5 V to −2.75 V 3
Tristate Leakage Current -1 1 μA 3
Single-Supply Power Range VDD 2.7 5.5 V VSS = 0 V 3
Supply Current Positive IDD 1 μA 3
Supply Current Negative ISS -1 μA 3
50-TP Store Current Positive IDD_OTP_STORE 4 mA 3
50-TP Store Current Negative ISS_OTP_STORE -4 mA 3
50-TP Read Current Positive IDD_OTP_READ 500 μA 3
50-TP Read Current Negative ISS_OTP_READ -500 μA 3
Power Dissipation PDISS 5.5 μW VIH = VDD or VIL = GND 3
Power Supply Rejection Ratio PSRR -55 -50 dB ΔVDD/ΔVSS = ±5 V ± 10% 3
SCLK cycle time t1 20 ns 4
SCLK high time t2 10 ns 4
SCLK low time t3 10 ns 4
SYNC to SCLK falling edge setup time t4 15 ns 4
Data setup time t5 5 ns 4
Data hold time t6 5 ns 4
SCLK falling edge to SYNC rising edge t7 1 ns 4
Minimum SYNC high time t8 400 ns 4
SYNC rising edge to next SCLK fall ignored t9 15 ns 4
SCLK rising edge to SDO valid t10 450 ns RPULL_UP = 2.2 kΩ to VDD, capacitance load of 168 pF 4
Memory readback execute time tMEMORY_READ 6 μs 4
Memory program time tMEMORY_PROGRAM 350 ms 4
Reset OTP restore time tRESET 600 μs 4
Power-on 50-TP restore time tPOWER-UP 2 ms Maximum time after VDD − VSS is equal to 2.5 V 4
VDD to GND VDD -0.3 7 V TA = 25°C 6
VSS to GND VSS -7 0.3 V TA = 25°C 6
VDD to VSS 7 V TA = 25°C 6
Digital Input and Output Voltage to GND -0.3 V Upper limit VDD + 0.3 V 6
EXT_CAP to VSS 7 V TA = 25°C 6
IA, IW Continuous IA, IW -6 6 mA Continuous 6
Operating Temperature Range -40 125 °C Includes programming of 50-TP memory 6
Maximum Junction Temperature TJ max 150 °C 6
Storage Temperature Range -65 150 °C 6
Reflow Peak Temperature 260 °C Time at peak 20 sec to 40 sec 6
Thermal Resistance Junction to Ambient, 10-Lead MSOP θJA 135 °C/W JEDEC 2S2P test board, still air 6
Capacitance A 90 pF f = 1 MHz, measured to GND, code = half scale 3
Capacitance W 40 pF f = 1 MHz, measured to GND, code = half scale 3
Common-Mode Leakage Current 50 nA VA = VW 3
Input Capacitance CIN 5 pF 3
Output Capacitance 5 pF 3
Bandwidth 700 kHz −3 dB, RAW = 5 kΩ, Terminal W, see Figure 24 4
Total Harmonic Distortion -90 dB VA = 1 V rms, f = 1 kHz, RAW = 5 kΩ 4
Resistor Noise Density 13 nV/√Hz RWB = 5 kΩ, TA = 25°C, f = 10 kHz 4

CAD (KiCad official)

  • Symbol: AD5174BRMZ-10
  • Footprint: Package_SO:MSOP-10_3x3mm_P0.5mm
  • 3D model: MSOP-10 (KiCad packages3D, STEP)
  • 3D model files: ad5174brmz-10-etched.step / ad5174brmz-10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ad5174brmz-10.step / ad5174brmz-10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Analog Devices datasheet (20 pp, sha256 9aad1c62688bcde2, retrieved 2026-10-31, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF