component
AD-BC846
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Changjing Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AD-BC846
Changjing · Bipolar Transistors - BJT · SOT-23
AD-BC846 from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base of the NPN transistor; DC current gain hFE is specified at VCE = 5V, IC = 2mA and emitter-base voltage is limited to 6 V. |
| 2 | EMITTER | passive | Emitter of the NPN transistor; collector continuous current is limited to 0.1 A. |
| 3 | COLLECTOR | passive | Collector of the NPN transistor; VCEO is 65 V for BC846, 45 V for BC847 and 30 V for BC848, with 0.1 A continuous current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | 80 | V | 1 | |||
| Collector-emitter voltage | VCEO | 65 | V | 1 | |||
| Emitter-base voltage | VEBO | 6 | V | 1 | |||
| Collector continuous current | IC | 0.1 | A | 1 | |||
| Collector power dissipation | PC | 200 | mW | 1 | |||
| Thermal resistance from junction to ambient | RθJA | 625 | °C/W | Measured with the device mounted on 1 inch² FR-4 board with 1oz. copper, in a still air environment with Ta = 25°C | 1 | ||
| Operating junction and storage temperature range | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Collector-base breakdown voltage (AD-BC846) | VCBO | 80 | V | IC = 10µA, IE = 0A | 2 | ||
| Collector-emitter breakdown voltage (AD-BC846) | VCEO | 65 | V | IC = 10mA, IB = 0A | 2 | ||
| Emitter-base breakdown voltage (AD-BC846) | VEBO | 6 | V | IE = 10µA, IC = 0A | 2 | ||
| Collector cutoff current (AD-BC846) | ICBO | 0.1 | µA | VCB = 70V, IE = 0A | 2 | ||
| Emitter cut-off current | IEBO | 0.1 | µA | VEB = 5V, IC = 0A | 2 | ||
| DC current gain (-A grade) | hFE | 110 | 220 | VCE = 5V, IC = 2mA | 2 | ||
| DC current gain (-B grade) | hFE | 200 | 450 | VCE = 5V, IC = 2mA | 2 | ||
| DC current gain (-C grade) | hFE | 420 | 800 | VCE = 5V, IC = 2mA | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.5 | V | IC = 100mA, IB = 5mA | 2 | ||
| Base-emitter saturation voltage | VBE(sat) | 1.1 | V | IC = 100mA, IB = 5mA | 2 | ||
| Transition frequency | fT | 100 | MHz | VCE = 5V, IC = 10mA, f = 100MHz | 2 | ||
| Collector output capacitance | Cob | 4.5 | pF | VCB = 10V, f = 1MHz | 2 |
CAD (KiCad official)
- Symbol:
AD-BC846 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
ad-bc846-etched.step/ad-bc846-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ad-bc846.step/ad-bc846.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (6 pp, sha256
8c8ea58b9f8dc1c0, retrieved 2026-10-24, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AD-BC846
**Changjing** · Bipolar Transistors - BJT · SOT-23
AD-BC846 from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base of the NPN transistor; DC current gain hFE is specified at VCE = 5V, IC = 2mA and emitter-base voltage is limited to 6 V. |
| 2 | EMITTER | passive | Emitter of the NPN transistor; collector continuous current is limited to 0.1 A. |
| 3 | COLLECTOR | passive | Collector of the NPN transistor; VCEO is 65 V for BC846, 45 V for BC847 and 30 V for BC848, with 0.1 A continuous current. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | | | 80 | V | | 1 |
| Collector-emitter voltage | VCEO | | | 65 | V | | 1 |
| Emitter-base voltage | VEBO | | | 6 | V | | 1 |
| Collector continuous current | IC | | | 0.1 | A | | 1 |
| Collector power dissipation | PC | | | 200 | mW | | 1 |
| Thermal resistance from junction to ambient | RθJA | | | 625 | °C/W | Measured with the device mounted on 1 inch² FR-4 board with 1oz. copper, in a still air environment with Ta = 25°C | 1 |
| Operating junction and storage temperature range | Tj, Tstg | -55 | | 150 | °C | | 1 |
| Collector-base breakdown voltage (AD-BC846) | VCBO | 80 | | | V | IC = 10µA, IE = 0A | 2 |
| Collector-emitter breakdown voltage (AD-BC846) | VCEO | 65 | | | V | IC = 10mA, IB = 0A | 2 |
| Emitter-base breakdown voltage (AD-BC846) | VEBO | 6 | | | V | IE = 10µA, IC = 0A | 2 |
| Collector cutoff current (AD-BC846) | ICBO | | | 0.1 | µA | VCB = 70V, IE = 0A | 2 |
| Emitter cut-off current | IEBO | | | 0.1 | µA | VEB = 5V, IC = 0A | 2 |
| DC current gain (-A grade) | hFE | 110 | | 220 | | VCE = 5V, IC = 2mA | 2 |
| DC current gain (-B grade) | hFE | 200 | | 450 | | VCE = 5V, IC = 2mA | 2 |
| DC current gain (-C grade) | hFE | 420 | | 800 | | VCE = 5V, IC = 2mA | 2 |
| Collector-emitter saturation voltage | VCE(sat) | | | 0.5 | V | IC = 100mA, IB = 5mA | 2 |
| Base-emitter saturation voltage | VBE(sat) | | | 1.1 | V | IC = 100mA, IB = 5mA | 2 |
| Transition frequency | fT | 100 | | | MHz | VCE = 5V, IC = 10mA, f = 100MHz | 2 |
| Collector output capacitance | Cob | | | 4.5 | pF | VCB = 10V, f = 1MHz | 2 |
## CAD (KiCad official)
- Symbol: `AD-BC846`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `ad-bc846-etched.step` / `ad-bc846-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ad-bc846.step` / `ad-bc846.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Changjing datasheet](docs/ad-bc846-datasheet.pdf) (6 pp, sha256 `8c8ea58b9f8dc1c0`, retrieved 2026-10-24, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ad-bc846-datasheet.pdf)