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AD-BC846

Public Made by Adom

by adom

Changjing Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AD-BC846

Changjing · Bipolar Transistors - BJT · SOT-23

AD-BC846 from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base of the NPN transistor; DC current gain hFE is specified at VCE = 5V, IC = 2mA and emitter-base voltage is limited to 6 V.
2 EMITTER passive Emitter of the NPN transistor; collector continuous current is limited to 0.1 A.
3 COLLECTOR passive Collector of the NPN transistor; VCEO is 65 V for BC846, 45 V for BC847 and 30 V for BC848, with 0.1 A continuous current.

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO 80 V 1
Collector-emitter voltage VCEO 65 V 1
Emitter-base voltage VEBO 6 V 1
Collector continuous current IC 0.1 A 1
Collector power dissipation PC 200 mW 1
Thermal resistance from junction to ambient RθJA 625 °C/W Measured with the device mounted on 1 inch² FR-4 board with 1oz. copper, in a still air environment with Ta = 25°C 1
Operating junction and storage temperature range Tj, Tstg -55 150 °C 1
Collector-base breakdown voltage (AD-BC846) VCBO 80 V IC = 10µA, IE = 0A 2
Collector-emitter breakdown voltage (AD-BC846) VCEO 65 V IC = 10mA, IB = 0A 2
Emitter-base breakdown voltage (AD-BC846) VEBO 6 V IE = 10µA, IC = 0A 2
Collector cutoff current (AD-BC846) ICBO 0.1 µA VCB = 70V, IE = 0A 2
Emitter cut-off current IEBO 0.1 µA VEB = 5V, IC = 0A 2
DC current gain (-A grade) hFE 110 220 VCE = 5V, IC = 2mA 2
DC current gain (-B grade) hFE 200 450 VCE = 5V, IC = 2mA 2
DC current gain (-C grade) hFE 420 800 VCE = 5V, IC = 2mA 2
Collector-emitter saturation voltage VCE(sat) 0.5 V IC = 100mA, IB = 5mA 2
Base-emitter saturation voltage VBE(sat) 1.1 V IC = 100mA, IB = 5mA 2
Transition frequency fT 100 MHz VCE = 5V, IC = 10mA, f = 100MHz 2
Collector output capacitance Cob 4.5 pF VCB = 10V, f = 1MHz 2

CAD (KiCad official)

  • Symbol: AD-BC846
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: ad-bc846-etched.step / ad-bc846-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ad-bc846.step / ad-bc846.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (6 pp, sha256 8c8ea58b9f8dc1c0, retrieved 2026-10-24, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF