component

9926A-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistor9926a-hxyfactory-2.0.0extractor-text

Verified 9926A-HXY

by Ray · last 2 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier lcsc, 8 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: 9926A-HXY · SOP-8 · 8 pins
  • ✓copper: 8 copper pads, none touching another net
  • ✓datasheet: all 8 pin names found in the 6-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: SOIC-8_3.9x4.9mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-2v5q2uow/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.5)
  • ✓pads: 8 pins = 8 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 8 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ 9926a-hxy.kicad_sym✓ 9926a-hxy.kicad_mod✓ 9926a-hxy.step
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Ray Publish 0.1.0 7f31d3b 12h ago

9926A-HXY

HXY MOSFET · MOSFETs · SOP-8

9926A-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of N-channel MOSFET 1.
2 G1 input Gate of N-channel MOSFET 1, with VGS rated at +12V maximum and operation at gate voltages as low as 2.5V.
3 S2 passive Source of N-channel MOSFET 2.
4 G2 input Gate of N-channel MOSFET 2, with VGS rated at +12V maximum and operation at gate voltages as low as 2.5V.
5 D2 passive Drain of N-channel MOSFET 2, with VDS rated at 20V maximum and ID of 6A.
6 D2 passive Drain of N-channel MOSFET 2, with VDS rated at 20V maximum and ID of 6A.
7 D1 passive Drain of N-channel MOSFET 1, with VDS rated at 20V maximum and ID of 6A.
8 D1 passive Drain of N-channel MOSFET 1, with VDS rated at 20V maximum and ID of 6A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 20 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 21 25 mΩ VGS=4.5V, ID=6A 2
Static Drain-Source On-Resistance RDS(ON) 32 45 mΩ VGS=2.5V, ID=4A 2
Gate Threshold Voltage VGS(th) 1.2 3 V VDS=VGS, ID=250uA 2
Drain-Source Leakage Current IDSS 25 uA VDS=20V, VGS=0V 2
Drain-Source Leakage Current (Tj=70oC) IDSS 250 uA VDS=20V, VGS=0V, Tj=70oC 2
Gate-Source Leakage IGSS 100 nA VGS=+12V, VDS=0V 2
Total Gate Charge Qg 11 17.6 nC ID=6A, VDS=16V, VGS=4.5V 2
Input Capacitance Ciss 570 910 pF VGS=0V, VDS=20V, f=1.0MHz 2
Gate Resistance Rg 1.6 2.4 Ω f=1.0MHz 2
Forward On Voltage VSD 1.2 V IS=1.7A, VGS=0V 2
Drain-Source Voltage VDS 20 V Tj=25oC 1
Gate-Source Voltage VGS 12 V Tj=25oC, printed +12 1
Drain Current ID 6 A TA=25℃, VGS @ 4.5V 1
Drain Current ID 4.8 A TA=70℃, VGS @ 4.5V 1
Pulsed Drain Current IDM 26 A Pulse width limited by max. junction temperature 1
Total Power Dissipation PD 2 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Maximum Thermal Resistance, Junction-ambient Rthj-a 62.5 ℃/W Surface mounted on 1 in2 copper pad of FR4 board, t<10sec 1
Thermal Resistance, Junction-ambient (min copper pad) Rthj-a 135 ℃/W when mounted on Min. copper pad 1
Linear Derating Factor 0.016 W/℃ 1
Forward Transconductance gfs 6 S VDS=10V, ID=6A 2
Gate-Source Charge Qgs 1.1 nC ID=6A, VDS=16V, VGS=4.5V 2
Gate-Drain Charge Qgd 4.1 nC ID=6A, VDS=16V, VGS=4.5V 2
Turn-on Delay Time td(on) 4.2 ns VDS=10V, ID=1A, RG=3.3Ω, VGS=10V, RD=10Ω 2
Rise Time tr 9 ns VDS=10V, ID=1A, RG=3.3Ω, VGS=10V, RD=10Ω 2
Turn-off Delay Time td(off) 23 ns VDS=10V, ID=1A, RG=3.3Ω, VGS=10V, RD=10Ω 2
Fall Time tf 3.5 ns VDS=10V, ID=1A, RG=3.3Ω, VGS=10V, RD=10Ω 2
Output Capacitance Coss 90 pF VGS=0V, VDS=20V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 85 pF VGS=0V, VDS=20V, f=1.0MHz 2
Reverse Recovery Time trr 21 ns IS=6A, VGS=0V, dI/dt=100A/µs 2
Reverse Recovery Charge Qrr 14 nC IS=6A, VGS=0V, dI/dt=100A/µs 2

CAD (KiCad official)

  • Symbol: 9926A-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: 9926a-hxy-etched.step / 9926a-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 9926a-hxy.step / 9926a-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 c72c757758dbd3bc, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF