component
9926A-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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9926A-HXY
HXY MOSFET · MOSFETs · SOP-8
9926A-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of N-channel MOSFET 1. |
| 2 | G1 | input | Gate of N-channel MOSFET 1, with VGS rated at +12V maximum and operation at gate voltages as low as 2.5V. |
| 3 | S2 | passive | Source of N-channel MOSFET 2. |
| 4 | G2 | input | Gate of N-channel MOSFET 2, with VGS rated at +12V maximum and operation at gate voltages as low as 2.5V. |
| 5 | D2 | passive | Drain of N-channel MOSFET 2, with VDS rated at 20V maximum and ID of 6A. |
| 6 | D2 | passive | Drain of N-channel MOSFET 2, with VDS rated at 20V maximum and ID of 6A. |
| 7 | D1 | passive | Drain of N-channel MOSFET 1, with VDS rated at 20V maximum and ID of 6A. |
| 8 | D1 | passive | Drain of N-channel MOSFET 1, with VDS rated at 20V maximum and ID of 6A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 21 | 25 | mΩ | VGS=4.5V, ID=6A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 32 | 45 | mΩ | VGS=2.5V, ID=4A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 3 | V | VDS=VGS, ID=250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 25 | uA | VDS=20V, VGS=0V | 2 | ||
| Drain-Source Leakage Current (Tj=70oC) | IDSS | 250 | uA | VDS=20V, VGS=0V, Tj=70oC | 2 | ||
| Gate-Source Leakage | IGSS | 100 | nA | VGS=+12V, VDS=0V | 2 | ||
| Total Gate Charge | Qg | 11 | 17.6 | nC | ID=6A, VDS=16V, VGS=4.5V | 2 | |
| Input Capacitance | Ciss | 570 | 910 | pF | VGS=0V, VDS=20V, f=1.0MHz | 2 | |
| Gate Resistance | Rg | 1.6 | 2.4 | Ω | f=1.0MHz | 2 | |
| Forward On Voltage | VSD | 1.2 | V | IS=1.7A, VGS=0V | 2 | ||
| Drain-Source Voltage | VDS | 20 | V | Tj=25oC | 1 | ||
| Gate-Source Voltage | VGS | 12 | V | Tj=25oC, printed +12 | 1 | ||
| Drain Current | ID | 6 | A | TA=25℃, VGS @ 4.5V | 1 | ||
| Drain Current | ID | 4.8 | A | TA=70℃, VGS @ 4.5V | 1 | ||
| Pulsed Drain Current | IDM | 26 | A | Pulse width limited by max. junction temperature | 1 | ||
| Total Power Dissipation | PD | 2 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | 62.5 | ℃/W | Surface mounted on 1 in2 copper pad of FR4 board, t<10sec | 1 | ||
| Thermal Resistance, Junction-ambient (min copper pad) | Rthj-a | 135 | ℃/W | when mounted on Min. copper pad | 1 | ||
| Linear Derating Factor | 0.016 | W/℃ | 1 | ||||
| Forward Transconductance | gfs | 6 | S | VDS=10V, ID=6A | 2 | ||
| Gate-Source Charge | Qgs | 1.1 | nC | ID=6A, VDS=16V, VGS=4.5V | 2 | ||
| Gate-Drain Charge | Qgd | 4.1 | nC | ID=6A, VDS=16V, VGS=4.5V | 2 | ||
| Turn-on Delay Time | td(on) | 4.2 | ns | VDS=10V, ID=1A, RG=3.3Ω, VGS=10V, RD=10Ω | 2 | ||
| Rise Time | tr | 9 | ns | VDS=10V, ID=1A, RG=3.3Ω, VGS=10V, RD=10Ω | 2 | ||
| Turn-off Delay Time | td(off) | 23 | ns | VDS=10V, ID=1A, RG=3.3Ω, VGS=10V, RD=10Ω | 2 | ||
| Fall Time | tf | 3.5 | ns | VDS=10V, ID=1A, RG=3.3Ω, VGS=10V, RD=10Ω | 2 | ||
| Output Capacitance | Coss | 90 | pF | VGS=0V, VDS=20V, f=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 85 | pF | VGS=0V, VDS=20V, f=1.0MHz | 2 | ||
| Reverse Recovery Time | trr | 21 | ns | IS=6A, VGS=0V, dI/dt=100A/µs | 2 | ||
| Reverse Recovery Charge | Qrr | 14 | nC | IS=6A, VGS=0V, dI/dt=100A/µs | 2 |
CAD (KiCad official)
- Symbol:
9926A-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
9926a-hxy-etched.step/9926a-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);9926a-hxy.step/9926a-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
c72c757758dbd3bc, retrieved 2026-11-02, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).