component
817B
Public Made by Adomby adom
UMW Transistor, Photovoltaic Output Optoisolators, DIP-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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817B
UMW · Transistor, Photovoltaic Output Optoisolators · DIP-4
817B from UMW, in a DIP-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Anode | passive | LED anode of the input GaAs emitter; forward current IF max 50 mA, reverse voltage VR max 6 V. |
| 2 | Cathode | passive | LED cathode of the input GaAs emitter; forward current IF max 50 mA, reverse voltage VR max 6 V. |
| 3 | Emitter | passive | NPN phototransistor emitter; VECO max 6 V, collector current IC max 50 mA. |
| 4 | Collector | passive | NPN phototransistor collector; VCEO max 35 V, collector current IC max 50 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | DIP-4 |
| Category | Optoisolators |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Current Conversion Ratio (grade B) | CTR | 130 | 260 | % | Grade B; IF=5mA, VCE=5V, Ta=25℃ | 3 | |
| Current Conversion Ratio | CTR | 50 | 600 | % | 2 | ||
| Collector Current | Ic | 2.5 | 30 | mA | IF=5mA, VCE=5V | 2 | |
| Collector and Emitter Attenuation Voltage | BVCEO | 35 | V | IC=0.1mA, IF=0 | 2 | ||
| Emitter and Collector Attenuation Voltage | BVECO | 6 | V | IE=10μA, IF=0 | 2 | ||
| Reverse Current | IR | 10 | μA | VR=4V | 2 | ||
| Collector Capacitance | Ct | 30 | 250 | pF | V=0, f=1KHz | 2 | |
| Collector to Emitter Current | ICEO | 100 | nA | VCE=20V, IF=0 | 2 | ||
| Collector and Emitter Saturation Voltage | VCE(sat) | 0.1 | 0.2 | V | IF=20mA, IC=1mA | 2 | |
| Capacitance | Cf | 0.6 | 1 | pF | V=0, f=1MHz | 2 | |
| Forward Voltage | VF | 1.2 | 1.4 | V | IF=20mA | 2 | |
| Rise Time | tr | 4 | 18 | μs | VCE=2V, IC=2mA, RL=100Ω | 2 | |
| Fall Time | tf | 3 | 18 | μs | 2 | ||
| Forward Current | IF | 50 | mA | 1 | |||
| Reverse Voltage | VR | 6 | V | 1 | |||
| Consume Power (input) | P | 70 | mW | 1 | |||
| Collector and Emitter Voltage | VCEO | 35 | V | 1 | |||
| Emitter and Collector Voltage | VECO | 6 | V | 1 | |||
| Collector Current | IC | 50 | mA | 1 | |||
| Consume Power (output) | PC | 150 | mW | 1 | |||
| Total Consume Power | Ptot | 200 | mW | 1 | |||
| Insulation Voltage | Viso | 5000 | Vrms | AC, 1 minute, humidity 40~60% | 1 | ||
| Max Insulation Voltage | VIOTM | 6000 | V | 1 | |||
| Rated Impulse Insulation Voltage | VIORM | 630 | V | 1 | |||
| Working Temperature | Topr | -30 | 100 | ℃ | 1 | ||
| Deposit (Storage) Temperature | Tstg | -55 | 125 | ℃ | 1 | ||
| Soldering Temperature | Tsol | 260 | ℃ | Soldering time 10 s (footnote *2) | 1 | ||
| Response Frequency (-3dB) | fc | 80 | kHz | VCE=5V, IC=2mA, RL=100Ω, -3dB | 2 |
CAD (KiCad official)
- Symbol:
817B - Footprint:
Package_DIP:DIP-4_W7.62mm - 3D model: DIP-4 (KiCad packages3D, STEP)
- 3D model files:
817b-etched.step/817b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);817b.step/817b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (5 pp, sha256
e8c9c618c71b9c34, retrieved 2026-10-16, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 817B
**UMW** · Transistor, Photovoltaic Output Optoisolators · DIP-4
817B from UMW, in a DIP-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Anode | passive | LED anode of the input GaAs emitter; forward current IF max 50 mA, reverse voltage VR max 6 V. |
| 2 | Cathode | passive | LED cathode of the input GaAs emitter; forward current IF max 50 mA, reverse voltage VR max 6 V. |
| 3 | Emitter | passive | NPN phototransistor emitter; VECO max 6 V, collector current IC max 50 mA. |
| 4 | Collector | passive | NPN phototransistor collector; VCEO max 35 V, collector current IC max 50 mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | DIP-4 |
| Category | Optoisolators |
| Pins | 4 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Current Conversion Ratio (grade B) | CTR | 130 | | 260 | % | Grade B; IF=5mA, VCE=5V, Ta=25℃ | 3 |
| Current Conversion Ratio | CTR | 50 | | 600 | % | | 2 |
| Collector Current | Ic | 2.5 | | 30 | mA | IF=5mA, VCE=5V | 2 |
| Collector and Emitter Attenuation Voltage | BVCEO | 35 | | | V | IC=0.1mA, IF=0 | 2 |
| Emitter and Collector Attenuation Voltage | BVECO | 6 | | | V | IE=10μA, IF=0 | 2 |
| Reverse Current | IR | | | 10 | μA | VR=4V | 2 |
| Collector Capacitance | Ct | | 30 | 250 | pF | V=0, f=1KHz | 2 |
| Collector to Emitter Current | ICEO | | | 100 | nA | VCE=20V, IF=0 | 2 |
| Collector and Emitter Saturation Voltage | VCE(sat) | | 0.1 | 0.2 | V | IF=20mA, IC=1mA | 2 |
| Capacitance | Cf | | 0.6 | 1 | pF | V=0, f=1MHz | 2 |
| Forward Voltage | VF | | 1.2 | 1.4 | V | IF=20mA | 2 |
| Rise Time | tr | | 4 | 18 | μs | VCE=2V, IC=2mA, RL=100Ω | 2 |
| Fall Time | tf | | 3 | 18 | μs | | 2 |
| Forward Current | IF | | | 50 | mA | | 1 |
| Reverse Voltage | VR | | | 6 | V | | 1 |
| Consume Power (input) | P | | | 70 | mW | | 1 |
| Collector and Emitter Voltage | VCEO | | | 35 | V | | 1 |
| Emitter and Collector Voltage | VECO | | | 6 | V | | 1 |
| Collector Current | IC | | | 50 | mA | | 1 |
| Consume Power (output) | PC | | | 150 | mW | | 1 |
| Total Consume Power | Ptot | | | 200 | mW | | 1 |
| Insulation Voltage | Viso | | | 5000 | Vrms | AC, 1 minute, humidity 40~60% | 1 |
| Max Insulation Voltage | VIOTM | | | 6000 | V | | 1 |
| Rated Impulse Insulation Voltage | VIORM | | | 630 | V | | 1 |
| Working Temperature | Topr | -30 | | 100 | ℃ | | 1 |
| Deposit (Storage) Temperature | Tstg | -55 | | 125 | ℃ | | 1 |
| Soldering Temperature | Tsol | | | 260 | ℃ | Soldering time 10 s (footnote *2) | 1 |
| Response Frequency (-3dB) | fc | | 80 | | kHz | VCE=5V, IC=2mA, RL=100Ω, -3dB | 2 |
## CAD (KiCad official)
- Symbol: `817B`
- Footprint: `Package_DIP:DIP-4_W7.62mm`
- 3D model: DIP-4 (KiCad packages3D, STEP)
- 3D model files: `817b-etched.step` / `817b-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `817b.step` / `817b.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588906548433600512) (5 pp, sha256 `e8c9c618c71b9c34`, retrieved 2026-10-16, tier: lcsc)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/817b-datasheet.pdf)