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Contents

README

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817B

UMW · Transistor, Photovoltaic Output Optoisolators · DIP-4

817B from UMW, in a DIP-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Anode passive LED anode of the input GaAs emitter; forward current IF max 50 mA, reverse voltage VR max 6 V.
2 Cathode passive LED cathode of the input GaAs emitter; forward current IF max 50 mA, reverse voltage VR max 6 V.
3 Emitter passive NPN phototransistor emitter; VECO max 6 V, collector current IC max 50 mA.
4 Collector passive NPN phototransistor collector; VCEO max 35 V, collector current IC max 50 mA.

Key specifications

Parameter Value
Manufacturer UMW
Package DIP-4
Category Optoisolators
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Current Conversion Ratio (grade B) CTR 130 260 % Grade B; IF=5mA, VCE=5V, Ta=25℃ 3
Current Conversion Ratio CTR 50 600 % 2
Collector Current Ic 2.5 30 mA IF=5mA, VCE=5V 2
Collector and Emitter Attenuation Voltage BVCEO 35 V IC=0.1mA, IF=0 2
Emitter and Collector Attenuation Voltage BVECO 6 V IE=10μA, IF=0 2
Reverse Current IR 10 μA VR=4V 2
Collector Capacitance Ct 30 250 pF V=0, f=1KHz 2
Collector to Emitter Current ICEO 100 nA VCE=20V, IF=0 2
Collector and Emitter Saturation Voltage VCE(sat) 0.1 0.2 V IF=20mA, IC=1mA 2
Capacitance Cf 0.6 1 pF V=0, f=1MHz 2
Forward Voltage VF 1.2 1.4 V IF=20mA 2
Rise Time tr 4 18 μs VCE=2V, IC=2mA, RL=100Ω 2
Fall Time tf 3 18 μs 2
Forward Current IF 50 mA 1
Reverse Voltage VR 6 V 1
Consume Power (input) P 70 mW 1
Collector and Emitter Voltage VCEO 35 V 1
Emitter and Collector Voltage VECO 6 V 1
Collector Current IC 50 mA 1
Consume Power (output) PC 150 mW 1
Total Consume Power Ptot 200 mW 1
Insulation Voltage Viso 5000 Vrms AC, 1 minute, humidity 40~60% 1
Max Insulation Voltage VIOTM 6000 V 1
Rated Impulse Insulation Voltage VIORM 630 V 1
Working Temperature Topr -30 100 ℃ 1
Deposit (Storage) Temperature Tstg -55 125 ℃ 1
Soldering Temperature Tsol 260 ℃ Soldering time 10 s (footnote *2) 1
Response Frequency (-3dB) fc 80 kHz VCE=5V, IC=2mA, RL=100Ω, -3dB 2

CAD (KiCad official)

  • Symbol: 817B
  • Footprint: Package_DIP:DIP-4_W7.62mm
  • 3D model: DIP-4 (KiCad packages3D, STEP)
  • 3D model files: 817b-etched.step / 817b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 817b.step / 817b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (5 pp, sha256 e8c9c618c71b9c34, retrieved 2026-10-16, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF