component
80P04
Public Made by Adomby adom
HL MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown80P04
HL · MOSFETs · TO-252
80P04 from HL, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the P-channel MOSFET, with VGS rated ±20 V maximum and threshold of -1 to -2.5 V. |
| 2 | D | passive | Drain, connected to the exposed tab (center lead position); VDS rated -40 V and continuous current -80 A at TC = 25 °C. |
| 3 | S | passive | Source; continuous source current is -80 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HL |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -40 | V | 1 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -80 | A | TC = 25°C | 1 | ||
| Continuous Drain Current | ID | -50.6 | A | TC = 100°C | 1 | ||
| Pulsed Drain Current | IDM | -320 | A | Note 1: repetitive rating, pulse width limited by TJ(MAX)=150°C | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 101.25 | mJ | Note 2: VDD = -30V, VGS = -10V, L = 0.1mH, IAS = -45A | 1 | ||
| Power Dissipation | PD | 81.16 | W | TC = 25°C | 1 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | -40 | V | VGS = 0V, ID = -250µA | 2 | ||
| Gate-body Leakage Current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | TJ = 25°C, VDS = -40V, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -100 | µA | TJ = 100°C, VDS = -40V, VGS = 0V | 2 | ||
| Gate-Threshold Voltage | VGS(th) | -1 | -1.6 | -2.5 | V | VDS = VGS, ID = -250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | 6.4 | 8.2 | mΩ | VGS = -10V, ID = -20A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 8.2 | 11 | mΩ | VGS = -4.5V, ID = -15A | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | IF = -20A, VGS = 0V | 2 | ||
| Continuous Source Current | IS | -80 | A | TC = 25°C | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 1.54 | °C/W | 1 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 54 | °C/W | Note 3: surface mounted on 1 inch² FR-4 board, 2OZ copper | 1 | ||
| Forward Transconductance | gfs | 104 | S | VDS = -10V, ID = -20A | 2 | ||
| Input Capacitance | Ciss | 5295 | pF | VDS = -20V, VGS = 0V, f = 1MHz | 2 | ||
| Output Capacitance | Coss | 430 | pF | VDS = -20V, VGS = 0V, f = 1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 385 | pF | VDS = -20V, VGS = 0V, f = 1MHz | 2 | ||
| Gate Resistance | Rg | 4.3 | Ω | f = 1MHz | 2 | ||
| Total Gate Charge | Qg | 110 | nC | VGS = -10V, VDS = -20V, ID = -20A | 2 | ||
| Gate-Source Charge | Qgs | 12.5 | nC | VGS = -10V, VDS = -20V, ID = -20A | 2 | ||
| Gate-Drain Charge | Qgd | 23 | nC | VGS = -10V, VDS = -20V, ID = -20A | 2 | ||
| Turn-on Delay Time | td(on) | 16.8 | ns | VGS = -10V, VDD = -20V, RG = 3Ω, ID = -20A | 2 | ||
| Rise Time | tr | 10 | ns | VGS = -10V, VDD = -20V, RG = 3Ω, ID = -20A | 2 | ||
| Turn-off Delay Time | td(off) | 65 | ns | VGS = -10V, VDD = -20V, RG = 3Ω, ID = -20A | 2 | ||
| Fall Time | tf | 17 | ns | VGS = -10V, VDD = -20V, RG = 3Ω, ID = -20A | 2 | ||
| Body Diode Reverse Recovery Time | trr | 42 | ns | IF = -20A, dI/dt = 100A/µs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 29 | nC | IF = -20A, dI/dt = 100A/µs | 2 |
CAD (KiCad official)
- Symbol:
80P04 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
80p04-etched.step/80p04-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);80p04.step/80p04.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HL datasheet (6 pp, sha256
af7e723ae9cd12d1, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).