# 80P03

**HL** · MOSFETs · TO-252

80P03 from HL, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, rated for a gate-source voltage VGS of ±20 V. |
| 2 | D | passive | Drain of the MOSFET, rated for a drain-source voltage of -30 V and a continuous drain current of -80 A at TC=25℃ (VGS=-10V). |
| 3 | S | passive | Source of the MOSFET, with a continuous source current rated at -80 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HL |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 |  |  | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID | -80 |  |  | A | VGS@-10V, TC=25℃ | 1 |
| Continuous Drain Current | ID | -40 |  |  | A | VGS@-10V, TC=75℃ | 1 |
| Pulsed Drain Current | IDM | -175 |  |  | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 31 | mJ | VDD=-25V, VGS=-10V, L=0.1mH, IAS=-25A | 1 |
| Avalanche Current | IAS | -25 |  |  | A |  | 1 |
| Total Power Dissipation | PD |  |  | 31.5 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance from Junction to Ambient | RθJA |  |  | 43 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper (note 1) | 2 |
| Thermal Resistance from Junction to Case | RθJC |  |  | 4 | ℃/W |  | 2 |
| Drain-Source Breakdown Voltage | BVDSS | -30 |  |  | V | VGS=0V, ID=-250μA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | -1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS |  |  | -5 | uA | VDS=-24V, VGS=0V, TJ=55℃ | 2 |
| Gate-body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.6 | -2.5 | V | VDS=VGS, ID=-250μA | 2 |
| Drain-Source On-Resistance | RDS(ON) |  | 6 | 8.8 | mΩ | VGS=-10V, ID=-12A | 2 |
| Drain-Source On-Resistance | RDS(ON) |  | 9 | 14 | mΩ | VGS=-4.5V, ID=-8A | 2 |
| Continuous Source Current | IS |  |  | -80 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage | VSD |  |  | -1 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |

## CAD (KiCad official)

- Symbol: `80P03`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `80p03-etched.step` / `80p03-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `80p03.step` / `80p03.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HL datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8756295910261301248) (6 pp, sha256 `6fb7971ff9131bcb`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/80p03-datasheet.pdf)