component
80P03
Public Made by Adomby adom
HL MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown80P03
HL · MOSFETs · TO-252
80P03 from HL, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, rated for a gate-source voltage VGS of ±20 V. |
| 2 | D | passive | Drain of the MOSFET, rated for a drain-source voltage of -30 V and a continuous drain current of -80 A at TC=25℃ (VGS=-10V). |
| 3 | S | passive | Source of the MOSFET, with a continuous source current rated at -80 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HL |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -80 | A | VGS@-10V, TC=25℃ | 1 | ||
| Continuous Drain Current | ID | -40 | A | VGS@-10V, TC=75℃ | 1 | ||
| Pulsed Drain Current | IDM | -175 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 31 | mJ | VDD=-25V, VGS=-10V, L=0.1mH, IAS=-25A | 1 | ||
| Avalanche Current | IAS | -25 | A | 1 | |||
| Total Power Dissipation | PD | 31.5 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 43 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper (note 1) | 2 | ||
| Thermal Resistance from Junction to Case | RθJC | 4 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V, ID=-250μA | 2 | ||
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -5 | uA | VDS=-24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.6 | -2.5 | V | VDS=VGS, ID=-250μA | 2 |
| Drain-Source On-Resistance | RDS(ON) | 6 | 8.8 | mΩ | VGS=-10V, ID=-12A | 2 | |
| Drain-Source On-Resistance | RDS(ON) | 9 | 14 | mΩ | VGS=-4.5V, ID=-8A | 2 | |
| Continuous Source Current | IS | -80 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
80P03 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
80p03-etched.step/80p03-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);80p03.step/80p03.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HL datasheet (6 pp, sha256
6fb7971ff9131bcb, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).