component
74HC03N
Public Made by Adomby adom
HGSEMI Logic Gates, DIP-14. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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74HC03N
HGSEMI · Logic Gates · DIP-14
74HC03N from HGSEMI, in a DIP-14. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1A | input | Input A of NAND gate channel 1; standard CMOS input that needs fast edge rates to avoid excess current and oscillation. |
| 2 | 1B | input | Input B of NAND gate channel 1; standard CMOS input that needs fast edge rates to avoid excess current and oscillation. |
| 3 | 1Y | output | Open-drain output of NAND gate channel 1; it can sink current to GND but not source current from VCC, so an external pull-up sets the high level. |
| 4 | 2A | input | Input A of NAND gate channel 2; standard CMOS input that needs fast edge rates to avoid excess current and oscillation. |
| 5 | 2B | input | Input B of NAND gate channel 2; standard CMOS input that needs fast edge rates to avoid excess current and oscillation. |
| 6 | 2Y | output | Open-drain output of NAND gate channel 2; it can sink current to GND but not source current from VCC, so an external pull-up sets the high level. |
| 7 | GND | power_in | Ground reference for the device. |
| 8 | 3Y | output | Open-drain output of NAND gate channel 3; it can sink current to GND but not source current from VCC, so an external pull-up sets the high level. |
| 9 | 3A | input | Input A of NAND gate channel 3; standard CMOS input that needs fast edge rates to avoid excess current and oscillation. |
| 10 | 3B | input | Input B of NAND gate channel 3; standard CMOS input that needs fast edge rates to avoid excess current and oscillation. |
| 11 | 4Y | output | Open-drain output of NAND gate channel 4; it can sink current to GND but not source current from VCC, so an external pull-up sets the high level. |
| 12 | 4A | input | Input A of NAND gate channel 4; standard CMOS input that needs fast edge rates to avoid excess current and oscillation. |
| 13 | 4B | input | Input B of NAND gate channel 4; standard CMOS input that needs fast edge rates to avoid excess current and oscillation. |
| 14 | VCC | power_in | Positive supply; the recommended supply range is 2 V to 6 V with 5 V nominal. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HGSEMI |
| Package | DIP-14 |
| Category | Logic |
| Pins | 14 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply voltage | VCC | 2 | 5 | 6 | V | 3 | |
| Supply voltage | VCC | -0.5 | 7 | V | 3 | ||
| High-level input voltage | VIH | 1.5 | V | VCC = 2 V | 3 | ||
| High-level input voltage | VIH | 3.15 | V | VCC = 4.5 V | 3 | ||
| High-level input voltage | VIH | 4.2 | V | VCC = 6 V | 3 | ||
| Low-level input voltage | VIL | 0.5 | V | VCC = 2 V | 3 | ||
| Low-level input voltage | VIL | 1.35 | V | VCC = 4.5 V | 3 | ||
| Low-level input voltage | VIL | 1.8 | V | VCC = 6 V | 3 | ||
| Input voltage | VI | 0 | V | maximum printed as VCC | 3 | ||
| Output voltage | VO | 0 | V | maximum printed as VCC | 3 | ||
| Input transition rise and fall rate | Δt/Δv | 1000 | ns | VCC = 2 V | 3 | ||
| Input transition rise and fall rate | Δt/Δv | 500 | ns | VCC = 4.5 V | 3 | ||
| Input transition rise and fall rate | Δt/Δv | 400 | ns | VCC = 6 V | 3 | ||
| Operating free-air temperature | TA | -40 | 85 | °C | 74HC03 | 3 | |
| Input clamp current | IIK | -20 | 20 | mA | VI < 0 or VI > VCC | 3 | |
| Output clamp current | IOK | -20 | 20 | mA | VO < 0 or VO > VCC | 3 | |
| Continuous output current | IO | -25 | 25 | mA | VO = 0 to VCC | 3 | |
| Continuous current through VCC or GND | -50 | 50 | mA | 3 | |||
| Junction temperature | TJ | 150 | °C | 3 | |||
| Storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| Lead temperature (soldering) | TL | 245 | °C | Soldering, 10 seconds | 3 | ||
| Output voltage (open-drain off state) | IOH | 0.01 | 0.5 | µA | VI = VIH or VIL, VO = VCC, VCC 6 V, TA 25°C | 4 | |
| Output voltage (open-drain off state) | IOH | 5 | µA | VI = VIH or VIL, VO = VCC, VCC 6 V, TA -40°C to 85°C | 4 | ||
| Low-level output voltage | VOL | 0.002 | 0.1 | V | VI = VIH or VIL, IOL = 20 µA, VCC 2 V, TA 25°C | 4 | |
| Low-level output voltage | VOL | 0.1 | V | VI = VIH or VIL, IOL = 20 µA, VCC 2 V, TA -40°C to 85°C | 4 | ||
| Low-level output voltage | VOL | 0.001 | 0.1 | V | VI = VIH or VIL, IOL = 20 µA, VCC 4.5 V, TA 25°C | 4 | |
| Low-level output voltage | VOL | 0.17 | 0.26 | V | VI = VIH or VIL, IOL = 4 mA, VCC 4.5 V, TA 25°C | 4 | |
| Low-level output voltage | VOL | 0.33 | V | VI = VIH or VIL, IOL = 4 mA, VCC 4.5 V, TA -40°C to 85°C | 4 | ||
| Low-level output voltage | VOL | 0.15 | 0.26 | V | VI = VIH or VIL, IOL = 5.2 mA, VCC 6 V, TA 25°C | 4 | |
| Input leakage current | II | -1 | 0.1 | 1 | µA | VI = VCC or 0, VCC 6 V | 4 |
| Supply current | ICC | 2 | 20 | µA | VI = VCC or 0, IO = 0, VCC 6 V | 4 | |
| Input capacitance | Ci | 3 | 10 | pF | VCC 2 V to 6 V | 4 | |
| Propagation delay, low-to-high | tPLH | 60 | 105 | ns | A or B to Y, VCC 2 V, TA 25°C | 5 | |
| Propagation delay, low-to-high | tPLH | 131 | ns | A or B to Y, VCC 2 V, TA -40°C to 85°C | 5 | ||
| Propagation delay, low-to-high | tPLH | 13 | 25 | ns | A or B to Y, VCC 4.5 V, TA 25°C | 5 | |
| Propagation delay, low-to-high | tPLH | 31 | ns | A or B to Y, VCC 4.5 V, TA -40°C to 85°C | 5 | ||
| Propagation delay, low-to-high | tPLH | 10 | 23 | ns | A or B to Y, VCC 6 V, TA 25°C | 5 | |
| Propagation delay, low-to-high | tPLH | 27 | ns | A or B to Y, VCC 6 V, TA -40°C to 85°C | 5 | ||
| Propagation delay, high-to-low | tPHL | 50 | 100 | ns | A or B to Y, VCC 2 V, TA 25°C | 5 | |
| Propagation delay, high-to-low | tPHL | 125 | ns | A or B to Y, VCC 2 V, TA -40°C to 85°C | 5 | ||
| Propagation delay, high-to-low | tPHL | 10 | 20 | ns | A or B to Y, VCC 4.5 V, TA 25°C | 5 | |
| Propagation delay, high-to-low | tPHL | 25 | ns | A or B to Y, VCC 4.5 V, TA -40°C to 85°C | 5 | ||
| Propagation delay, high-to-low | tPHL | 8 | 17 | ns | A or B to Y, VCC 6 V, TA 25°C | 5 | |
| Propagation delay, high-to-low | tPHL | 21 | ns | A or B to Y, VCC 6 V, TA -40°C to 85°C | 5 | ||
| Transition time | tt | 38 | 75 | ns | Y, VCC 2 V, TA 25°C | 5 | |
| Transition time | tt | 95 | ns | Y, VCC 2 V, TA -40°C to 85°C | 5 | ||
| Transition time | tt | 8 | 15 | ns | Y, VCC 4.5 V, TA 25°C | 5 | |
| Transition time | tt | 19 | ns | Y, VCC 4.5 V, TA -40°C to 85°C | 5 | ||
| Transition time | tt | 6 | 13 | ns | Y, VCC 6 V, TA 25°C | 5 | |
| Transition time | tt | 16 | ns | Y, VCC 6 V, TA -40°C to 85°C | 5 | ||
| Junction-to-ambient thermal resistance (DIP) | RθJA | 66 | °C/W | DIP-14 | 4 | ||
| Junction-to-case (top) thermal resistance (DIP) | RθJC(top) | 53.7 | °C/W | DIP-14 | 4 | ||
| Junction-to-board thermal resistance (DIP) | RθJB | 45.7 | °C/W | DIP-14 | 4 |
CAD (KiCad official)
- Symbol:
74HC03N - Footprint:
Package_DIP:DIP-14_W7.62mm - 3D model: DIP-14 (KiCad packages3D, STEP)
- 3D model files:
74hc03n-etched.step/74hc03n-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);74hc03n.step/74hc03n.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HGSEMI datasheet (12 pp, sha256
3cd6c9e16e4bdd1d, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).