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4N65

Public Made by Adom

by adom

GOODWORK MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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4N65

GOODWORK · MOSFETs · TO-252

4N65 from GOODWORK, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET, with gate-source voltage rated at ±30 V (VGSS) and gate threshold VGS(TH) of 2.0 to 4.0 V at VDS = VGS, ID = 250 μA.
2 Drain passive Drain terminal, rated for drain-source voltage VDSS of 650 V and continuous drain current ID of 4.0 A at TC = 25°C.
3 Source passive Source terminal, with maximum continuous drain-source diode forward current IS of 4.4 A.

Key specifications

Parameter Value
Manufacturer GOODWORK
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 650 V 1
Gate-Source Voltage VGSS -30 30 V 1
Drain Current Continuous ID 4 A 1
Drain Current Pulsed IDM 16 A Note 2: repetitive rating, pulse width limited by maximum junction temperature 1
Avalanche Energy Single Pulsed EAS 260 mJ Note 3: L = 30mH, IAS = 4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 1
Avalanche Energy Repetitive EAR 10.6 mJ Note 2: repetitive rating, pulse width limited by maximum junction temperature 1
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns Note 4: ISD≤4.4A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C 1
Junction Temperature TJ 150 °C 1
Operating Temperature TOPR -55 150 °C 1
Storage Temperature TSTG -55 150 °C 1
Drain-Source Breakdown Voltage BVDSS 650 V VGS = 0 V, ID = 250μA 2
Drain-Source Leakage Current IDSS 10 μA VDS = 650 V, VGS = 0 V 2
Gate-Source Leakage Current Forward IGSS 100 nA VGS = 30 V, VDS = 0 V 2
Gate-Source Leakage Current Reverse IGSS -100 nA VGS = -30 V, VDS = 0 V 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-State Resistance RDS(ON) 2.8 Ω VGS = 10 V, ID 2
Input Capacitance CISS 520 670 pF VDS = 25 V, VGS = 0V, f = 1MHz 2
Output Capacitance COSS 70 90 pF VDS = 25 V, VGS = 0V, f = 1MHz 2
Reverse Transfer Capacitance CRSS 8 11 pF VDS = 25 V, VGS = 0V, f = 1MHz 2
Turn-On Delay Time tD(ON) 13 35 ns VDD = 325V, ID = 4.0A, RG = 25Ω (Note 1, 2) 2
Turn-On Rise Time tR 45 100 ns VDD = 325V, ID = 4.0A, RG = 25Ω (Note 1, 2) 2
Turn-Off Delay Time tD(OFF) 25 60 ns VDD = 325V, ID = 4.0A, RG = 25Ω (Note 1, 2) 2
Turn-Off Fall Time tF 35 80 ns VDD = 325V, ID = 4.0A, RG = 25Ω (Note 1, 2) 2
Total Gate Charge QG 15 20 nC VDS = 520V, ID, VGS = 10V (Note 1, 2) 2
Maximum Continuous Drain-Source Diode Forward Current IS 4.4 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 17.6 A 2

CAD (KiCad official)

  • Symbol: 4N65
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: 4n65-etched.step / 4n65-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 4n65.step / 4n65.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOODWORK datasheet (6 pp, sha256 760a158a0434aa61, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF