component
4N65
Public Made by Adomby adom
GOODWORK MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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4n65: specified limits as data (metadata.characteristics, 26 rows from the datasheet)
2 files changed
+353−1
README.md+33@@ -21,6 +21,39 @@ | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDSS | | | 650 | V | | 1 |+| Gate-Source Voltage | VGSS | -30 | | 30 | V | | 1 |+| Drain Current Continuous | ID | | | 4 | A | | 1 |+| Drain Current Pulsed | IDM | | | 16 | A | Note 2: repetitive rating, pulse width limited by maximum junction temperature | 1 |+| Avalanche Energy Single Pulsed | EAS | | | 260 | mJ | Note 3: L = 30mH, IAS = 4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C | 1 |+| Avalanche Energy Repetitive | EAR | | | 10.6 | mJ | Note 2: repetitive rating, pulse width limited by maximum junction temperature | 1 |+| Peak Diode Recovery dv/dt | dv/dt | | | 4.5 | V/ns | Note 4: ISD≤4.4A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C | 1 |+| Junction Temperature | TJ | | | 150 | °C | | 1 |+| Operating Temperature | TOPR | -55 | | 150 | °C | | 1 |+| Storage Temperature | TSTG | -55 | | 150 | °C | | 1 |+| Drain-Source Breakdown Voltage | BVDSS | 650 | | | V | VGS = 0 V, ID = 250μA | 2 |+| Drain-Source Leakage Current | IDSS | | | 10 | μA | VDS = 650 V, VGS = 0 V | 2 |+| Gate-Source Leakage Current Forward | IGSS | | | 100 | nA | VGS = 30 V, VDS = 0 V | 2 |+| Gate-Source Leakage Current Reverse | IGSS | | | -100 | nA | VGS = -30 V, VDS = 0 V | 2 |+| Gate Threshold Voltage | VGS(TH) | 2 | | 4 | V | VDS = VGS, ID = 250μA | 2 |+| Static Drain-Source On-State Resistance | RDS(ON) | | | 2.8 | Ω | VGS = 10 V, ID | 2 |+| Input Capacitance | CISS | | 520 | 670 | pF | VDS = 25 V, VGS = 0V, f = 1MHz | 2 |+| Output Capacitance | COSS | | 70 | 90 | pF | VDS = 25 V, VGS = 0V, f = 1MHz | 2 |+| Reverse Transfer Capacitance | CRSS | | 8 | 11 | pF | VDS = 25 V, VGS = 0V, f = 1MHz | 2 |+| Turn-On Delay Time | tD(ON) | | 13 | 35 | ns | VDD = 325V, ID = 4.0A, RG = 25Ω (Note 1, 2) | 2 |+| Turn-On Rise Time | tR | | 45 | 100 | ns | VDD = 325V, ID = 4.0A, RG = 25Ω (Note 1, 2) | 2 |+| Turn-Off Delay Time | tD(OFF) | | 25 | 60 | ns | VDD = 325V, ID = 4.0A, RG = 25Ω (Note 1, 2) | 2 |+| Turn-Off Fall Time | tF | | 35 | 80 | ns | VDD = 325V, ID = 4.0A, RG = 25Ω (Note 1, 2) | 2 |+| Total Gate Charge | QG | | 15 | 20 | nC | VDS = 520V, ID, VGS = 10V (Note 1, 2) | 2 |+| Maximum Continuous Drain-Source Diode Forward Current | IS | | | 4.4 | A | | 2 |+| Maximum Pulsed Drain-Source Diode Forward Current | ISM | | | 17.6 | A | | 2 |+ ## CAD (KiCad official) - Symbol: `4N65`
page.json+320−1@@ -147,6 +147,325 @@ "Package": "TO-252", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "760a158a0434aa61",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 650,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current Continuous",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current Pulsed",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 16,+ "conditions": "Note 2: repetitive rating, pulse width limited by maximum junction temperature",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Energy Single Pulsed",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 260,+ "conditions": "Note 3: L = 30mH, IAS = 4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Energy Repetitive",+ "symbol": "EAR",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 10.6,+ "conditions": "Note 2: repetitive rating, pulse width limited by maximum junction temperature",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Peak Diode Recovery dv/dt",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 4.5,+ "conditions": "Note 4: ISD≤4.4A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction Temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Temperature",+ "symbol": "TOPR",+ "kind": "recommended_operating",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 650,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = 250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VDS = 650 V, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage Current Forward",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS = 30 V, VDS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage Current Reverse",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "VGS = -30 V, VDS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(TH)",+ "kind": "electrical",+ "unit": "V",+ "min": 2,+ "typ": null,+ "max": 4,+ "conditions": "VDS = VGS, ID = 250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 2.8,+ "conditions": "VGS = 10 V, ID",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "CISS",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 520,+ "max": 670,+ "conditions": "VDS = 25 V, VGS = 0V, f = 1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "COSS",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 70,+ "max": 90,+ "conditions": "VDS = 25 V, VGS = 0V, f = 1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "CRSS",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 8,+ "max": 11,+ "conditions": "VDS = 25 V, VGS = 0V, f = 1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "tD(ON)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 13,+ "max": 35,+ "conditions": "VDD = 325V, ID = 4.0A, RG = 25Ω (Note 1, 2)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Rise Time",+ "symbol": "tR",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 45,+ "max": 100,+ "conditions": "VDD = 325V, ID = 4.0A, RG = 25Ω (Note 1, 2)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "tD(OFF)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 25,+ "max": 60,+ "conditions": "VDD = 325V, ID = 4.0A, RG = 25Ω (Note 1, 2)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Fall Time",+ "symbol": "tF",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 35,+ "max": 80,+ "conditions": "VDD = 325V, ID = 4.0A, RG = 25Ω (Note 1, 2)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "QG",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 15,+ "max": 20,+ "conditions": "VDS = 520V, ID, VGS = 10V (Note 1, 2)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Continuous Drain-Source Diode Forward Current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4.4,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Pulsed Drain-Source Diode Forward Current",+ "symbol": "ISM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 17.6,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -188,4 +507,4 @@ "visibility": { "public": true }-}+}