component
4N50G-TN3-R
Public Made by Adomby adom
UTC Unisonic Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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4N50G-TN3-R
UTC Unisonic Tech · MOSFETs · TO-252
4N50G-TN3-R from UTC Unisonic Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the 4 A, 500 V N-channel power MOSFET; the datasheet rates gate-source voltage VGSS at ±30 V. |
| 2 | D | passive | Drain of the N-channel MOSFET; the device is rated for VDSS = 500 V and continuous drain current ID = 4 A at TC = 25°C. |
| 3 | S | passive | Source of the N-channel MOSFET; the body diode is rated for 4 A continuous (IS) and 16 A pulsed (ISM). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGSS | -30 | 30 | V | 2 | ||
| Drain-Source Voltage | VDSS | 500 | V | 2 | |||
| Drain Current Continuous | ID | 4 | A | TC=25°C | 2 | ||
| Drain Current Pulsed | IDM | 16 | A | Note 2 | 2 | ||
| Avalanche Current | IAR | 4 | A | Note 3 | 2 | ||
| Avalanche Energy Single Pulsed | EAS | 216 | mJ | L=27mH, IAS=4A, VDD=50V, RG=25Ω, Starting TJ=25°C (Note 4) | 2 | ||
| Avalanche Energy Repetitive | EAR | 8.5 | mJ | Note 3 | 2 | ||
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | ISD≤4A, di/dt≤200A/µs, VDD≤BVDSS, Starting TJ=25°C (Note 5) | 2 | ||
| Power Dissipation TO-251/TO-252 | PD | 52 | W | Table header TC=25°C unless otherwise specified | 2 | ||
| Derate above 25°C TO-251/TO-252 | 0.41 | W/°C | Derate above 25°C | 2 | |||
| Junction Temperature | TJ | 150 | °C | 2 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 500 | V | ID=250µA, VGS=0V | 3 | ||
| Drain-Source Leakage Current | IDSS | 25 | µA | VDS=500V, VGS=0V | 3 | ||
| Gate-Source Leakage Current Forward | IGSS | 100 | nA | VGS=+30V, VDS=0V | 3 | ||
| Gate-Source Leakage Current Reverse | IGSS | -100 | nA | VGS=-30V, VDS=0V | 3 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS=VGS, ID=250µA | 3 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 1.6 | 2.2 | Ω | VGS=10V, ID=2A | 3 | |
| Input Capacitance | CISS | 485 | 650 | pF | VGS=0V, VDS=25V, f=1.0MHz | 3 | |
| Output Capacitance | COSS | 65 | 90 | pF | VGS=0V, VDS=25V, f=1.0MHz | 3 | |
| Reverse Transfer Capacitance | CRSS | 5 | 8 | pF | VGS=0V, VDS=25V, f=1.0MHz | 3 | |
| Total Gate Charge | QG | 11 | 15 | nC | VGS=10V, VDS=400V, ID=4A (Note 1, 2) | 3 | |
| Turn-ON Delay Time | tD(ON) | 14 | 38 | ns | VDD=250V, ID=4A, RG=25Ω (Note 1, 2) | 3 | |
| Rise Time | tR | 21 | 52 | ns | VDD=250V, ID=4A, RG=25Ω (Note 1, 2) | 3 | |
| Turn-OFF Delay Time | tD(OFF) | 27 | 64 | ns | VDD=250V, ID=4A, RG=25Ω (Note 1, 2) | 3 | |
| Fall-Time | tF | 20 | 50 | ns | VDD=250V, ID=4A, RG=25Ω (Note 1, 2) | 3 | |
| Maximum Body-Diode Continuous Current | IS | 4 | A | 3 | |||
| Maximum Body-Diode Pulsed Current | ISM | 16 | A | 3 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.6 | V | IS=4A, VGS=0V | 3 | ||
| Junction to Ambient TO-251/TO-252 | θJA | 110 | °C/W | Junction to Ambient, TO-251/TO-252 | 2 | ||
| Junction to Case TO-251/TO-252 | θJC | 2.4 | °C/W | Junction to Case, TO-251/TO-252 | 2 | ||
| Gate to Source Charge | QGS | 3 | nC | VGS=10V, VDS=400V, ID=4A (Note 1, 2) | 3 | ||
| Gate to Drain Charge | QGD | 5 | nC | VGS=10V, VDS=400V, ID=4A (Note 1, 2) | 3 | ||
| Body Diode Reverse Recovery Time | tRR | 350 | ns | IS=4A, VGS=0V, dIF/dt=100A/µs (Note 1) | 3 | ||
| Body Diode Reverse Recovery Charge | QRR | 33 | µC | 3 |
CAD (KiCad official)
- Symbol:
4N50G-TN3-R - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
4n50g-tn3-r-etched.step/4n50g-tn3-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);4n50g-tn3-r.step/4n50g-tn3-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC Unisonic Tech datasheet (6 pp, sha256
2cb087c13f459eea, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 4N50G-TN3-R
**UTC Unisonic Tech** · MOSFETs · TO-252
4N50G-TN3-R from UTC Unisonic Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the 4 A, 500 V N-channel power MOSFET; the datasheet rates gate-source voltage VGSS at ±30 V. |
| 2 | D | passive | Drain of the N-channel MOSFET; the device is rated for VDSS = 500 V and continuous drain current ID = 4 A at TC = 25°C. |
| 3 | S | passive | Source of the N-channel MOSFET; the body diode is rated for 4 A continuous (IS) and 16 A pulsed (ISM). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGSS | -30 | | 30 | V | | 2 |
| Drain-Source Voltage | VDSS | | | 500 | V | | 2 |
| Drain Current Continuous | ID | | | 4 | A | TC=25°C | 2 |
| Drain Current Pulsed | IDM | | | 16 | A | Note 2 | 2 |
| Avalanche Current | IAR | | | 4 | A | Note 3 | 2 |
| Avalanche Energy Single Pulsed | EAS | | | 216 | mJ | L=27mH, IAS=4A, VDD=50V, RG=25Ω, Starting TJ=25°C (Note 4) | 2 |
| Avalanche Energy Repetitive | EAR | | | 8.5 | mJ | Note 3 | 2 |
| Peak Diode Recovery dv/dt | dv/dt | | | 4.5 | V/ns | ISD≤4A, di/dt≤200A/µs, VDD≤BVDSS, Starting TJ=25°C (Note 5) | 2 |
| Power Dissipation TO-251/TO-252 | PD | | | 52 | W | Table header TC=25°C unless otherwise specified | 2 |
| Derate above 25°C TO-251/TO-252 | | | 0.41 | | W/°C | Derate above 25°C | 2 |
| Junction Temperature | TJ | | | 150 | °C | | 2 |
| Storage Temperature | TSTG | -55 | | 150 | °C | | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 500 | | | V | ID=250µA, VGS=0V | 3 |
| Drain-Source Leakage Current | IDSS | | | 25 | µA | VDS=500V, VGS=0V | 3 |
| Gate-Source Leakage Current Forward | IGSS | | | 100 | nA | VGS=+30V, VDS=0V | 3 |
| Gate-Source Leakage Current Reverse | IGSS | -100 | | | nA | VGS=-30V, VDS=0V | 3 |
| Gate Threshold Voltage | VGS(TH) | 2 | | 4 | V | VDS=VGS, ID=250µA | 3 |
| Static Drain-Source On-State Resistance | RDS(ON) | | 1.6 | 2.2 | Ω | VGS=10V, ID=2A | 3 |
| Input Capacitance | CISS | | 485 | 650 | pF | VGS=0V, VDS=25V, f=1.0MHz | 3 |
| Output Capacitance | COSS | | 65 | 90 | pF | VGS=0V, VDS=25V, f=1.0MHz | 3 |
| Reverse Transfer Capacitance | CRSS | | 5 | 8 | pF | VGS=0V, VDS=25V, f=1.0MHz | 3 |
| Total Gate Charge | QG | | 11 | 15 | nC | VGS=10V, VDS=400V, ID=4A (Note 1, 2) | 3 |
| Turn-ON Delay Time | tD(ON) | | 14 | 38 | ns | VDD=250V, ID=4A, RG=25Ω (Note 1, 2) | 3 |
| Rise Time | tR | | 21 | 52 | ns | VDD=250V, ID=4A, RG=25Ω (Note 1, 2) | 3 |
| Turn-OFF Delay Time | tD(OFF) | | 27 | 64 | ns | VDD=250V, ID=4A, RG=25Ω (Note 1, 2) | 3 |
| Fall-Time | tF | | 20 | 50 | ns | VDD=250V, ID=4A, RG=25Ω (Note 1, 2) | 3 |
| Maximum Body-Diode Continuous Current | IS | | | 4 | A | | 3 |
| Maximum Body-Diode Pulsed Current | ISM | | | 16 | A | | 3 |
| Drain-Source Diode Forward Voltage | VSD | | | 1.6 | V | IS=4A, VGS=0V | 3 |
| Junction to Ambient TO-251/TO-252 | θJA | | | 110 | °C/W | Junction to Ambient, TO-251/TO-252 | 2 |
| Junction to Case TO-251/TO-252 | θJC | | | 2.4 | °C/W | Junction to Case, TO-251/TO-252 | 2 |
| Gate to Source Charge | QGS | | 3 | | nC | VGS=10V, VDS=400V, ID=4A (Note 1, 2) | 3 |
| Gate to Drain Charge | QGD | | 5 | | nC | VGS=10V, VDS=400V, ID=4A (Note 1, 2) | 3 |
| Body Diode Reverse Recovery Time | tRR | | 350 | | ns | IS=4A, VGS=0V, dIF/dt=100A/µs (Note 1) | 3 |
| Body Diode Reverse Recovery Charge | QRR | | 33 | | µC | | 3 |
## CAD (KiCad official)
- Symbol: `4N50G-TN3-R`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `4n50g-tn3-r-etched.step` / `4n50g-tn3-r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `4n50g-tn3-r.step` / `4n50g-tn3-r.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UTC Unisonic Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603137526744174592) (6 pp, sha256 `2cb087c13f459eea`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/4n50g-tn3-r-datasheet.pdf)