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4N50G-TN3-R

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UTC Unisonic Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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4N50G-TN3-R

UTC Unisonic Tech · MOSFETs · TO-252

4N50G-TN3-R from UTC Unisonic Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the 4 A, 500 V N-channel power MOSFET; the datasheet rates gate-source voltage VGSS at ±30 V.
2 D passive Drain of the N-channel MOSFET; the device is rated for VDSS = 500 V and continuous drain current ID = 4 A at TC = 25°C.
3 S passive Source of the N-channel MOSFET; the body diode is rated for 4 A continuous (IS) and 16 A pulsed (ISM).

Key specifications

Parameter Value
Manufacturer UTC Unisonic Tech
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage VGSS -30 30 V 2
Drain-Source Voltage VDSS 500 V 2
Drain Current Continuous ID 4 A TC=25°C 2
Drain Current Pulsed IDM 16 A Note 2 2
Avalanche Current IAR 4 A Note 3 2
Avalanche Energy Single Pulsed EAS 216 mJ L=27mH, IAS=4A, VDD=50V, RG=25Ω, Starting TJ=25°C (Note 4) 2
Avalanche Energy Repetitive EAR 8.5 mJ Note 3 2
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns ISD≤4A, di/dt≤200A/µs, VDD≤BVDSS, Starting TJ=25°C (Note 5) 2
Power Dissipation TO-251/TO-252 PD 52 W Table header TC=25°C unless otherwise specified 2
Derate above 25°C TO-251/TO-252 0.41 W/°C Derate above 25°C 2
Junction Temperature TJ 150 °C 2
Storage Temperature TSTG -55 150 °C 2
Drain-Source Breakdown Voltage BVDSS 500 V ID=250µA, VGS=0V 3
Drain-Source Leakage Current IDSS 25 µA VDS=500V, VGS=0V 3
Gate-Source Leakage Current Forward IGSS 100 nA VGS=+30V, VDS=0V 3
Gate-Source Leakage Current Reverse IGSS -100 nA VGS=-30V, VDS=0V 3
Gate Threshold Voltage VGS(TH) 2 4 V VDS=VGS, ID=250µA 3
Static Drain-Source On-State Resistance RDS(ON) 1.6 2.2 Ω VGS=10V, ID=2A 3
Input Capacitance CISS 485 650 pF VGS=0V, VDS=25V, f=1.0MHz 3
Output Capacitance COSS 65 90 pF VGS=0V, VDS=25V, f=1.0MHz 3
Reverse Transfer Capacitance CRSS 5 8 pF VGS=0V, VDS=25V, f=1.0MHz 3
Total Gate Charge QG 11 15 nC VGS=10V, VDS=400V, ID=4A (Note 1, 2) 3
Turn-ON Delay Time tD(ON) 14 38 ns VDD=250V, ID=4A, RG=25Ω (Note 1, 2) 3
Rise Time tR 21 52 ns VDD=250V, ID=4A, RG=25Ω (Note 1, 2) 3
Turn-OFF Delay Time tD(OFF) 27 64 ns VDD=250V, ID=4A, RG=25Ω (Note 1, 2) 3
Fall-Time tF 20 50 ns VDD=250V, ID=4A, RG=25Ω (Note 1, 2) 3
Maximum Body-Diode Continuous Current IS 4 A 3
Maximum Body-Diode Pulsed Current ISM 16 A 3
Drain-Source Diode Forward Voltage VSD 1.6 V IS=4A, VGS=0V 3
Junction to Ambient TO-251/TO-252 θJA 110 °C/W Junction to Ambient, TO-251/TO-252 2
Junction to Case TO-251/TO-252 θJC 2.4 °C/W Junction to Case, TO-251/TO-252 2
Gate to Source Charge QGS 3 nC VGS=10V, VDS=400V, ID=4A (Note 1, 2) 3
Gate to Drain Charge QGD 5 nC VGS=10V, VDS=400V, ID=4A (Note 1, 2) 3
Body Diode Reverse Recovery Time tRR 350 ns IS=4A, VGS=0V, dIF/dt=100A/µs (Note 1) 3
Body Diode Reverse Recovery Charge QRR 33 µC 3

CAD (KiCad official)

  • Symbol: 4N50G-TN3-R
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: 4n50g-tn3-r-etched.step / 4n50g-tn3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 4n50g-tn3-r.step / 4n50g-tn3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC Unisonic Tech datasheet (6 pp, sha256 2cb087c13f459eea, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF