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4N38

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Vishay Intertech Transistor, Photovoltaic Output Optoisolators, DIP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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4N38

Vishay Intertech · Transistor, Photovoltaic Output Optoisolators · DIP-6

4N38 from Vishay Intertech, in a DIP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A passive Anode of the gallium arsenide infrared LED input, which is driven at forward current IF (absolute maximum 60 mA).
2 C passive Cathode of the gallium arsenide infrared LED input, forming the LED return path.
3 NC unconnected No internal connection; leave unconnected.
4 E passive Emitter of the silicon NPN phototransistor output.
5 C passive Collector of the silicon NPN phototransistor output (collector emitter breakdown voltage VCEO 70 V absolute maximum for the family, 80 V for 4N38).
6 B passive Base connection of the silicon NPN phototransistor, brought out to the package for base access (the family is titled 'with Base Connection').

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package DIP-6
Category Optoisolators
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector emitter leakage current ICEO 50 nA VCE = 60 V, IF = 0 3
Collector emitter leakage current at Tamb 100 °C ICEO 6 μA VCE = 60 V, IF = 0, Tamb = 100 °C 3
Reverse current IR 0.1 10 μA VR = 6 V 2
Forward voltage VF 1.2 1.5 V IF = 10 mA 2
Forward voltage at Tamb = -55 °C VF 0.9 1.3 1.7 V IF = 10 mA, Tamb = -55 °C 2
Collector emitter breakdown voltage (4N38) BVCEO 80 V IC = 1 mA 2
Collector base breakdown voltage (4N38) BVCBO 80 V IC = 100 μA, IB = 1 μA 2
Emitter collector breakdown voltage BVECO 7 V IE = 100 μA 2
Current transfer ratio (4N38) CTRDC 20 % VCE = 10 V, IF = 20 mA 3
Current transfer ratio over temperature (4N38) CTRDC 30 % VCE = 10 V, IF = 10 mA, TA = -55 °C to +100 °C 3
Resistance, input output RIO 1011 Ω VIO = 500 V 3
Isolation resistance RIO 1012 Ω VIO = 500 V, Tamb = 25 °C 2
Isolation resistance at 100 °C RIO 1011 Ω VIO = 500 V, Tamb = 100 °C 2
Capacitance CO 25 pF VR = 0 V, f = 1 MHz 2
Collector emitter capacitance CCE 6 pF VCE = 0 3
Capacitance, input output CIO 0.5 pF f = 1 MHz 3
Turn-on time ton 10 μs VCC = 5 V, IC = 2 mA, RL = 100 Ω 3
Turn-off time toff 10 μs VCC = 5 V, IC = 2 mA, RL = 100 Ω 3
Reverse voltage VR 6 V 2
Forward current IF 60 mA 2
Surge current IFSM 2.5 A t ≤ 10 μs 2
Power dissipation Pdiss 70 mW 2
Collector emitter breakdown voltage (absolute maximum) VCEO 70 V 2
Emitter base breakdown voltage VEBO 7 V 2
Collector current IC 50 mA 2
Collector peak current ICM 100 mA tp/T = 0.5, tp ≤ 10 ms 2
Output power dissipation Pdiss 150 mW 2
Isolation test voltage VISO 5000 VRMS t = 1 s 2
Storage temperature Tstg -55 150 °C 2
Operating temperature Tamb -55 100 °C 2
Soldering temperature Tsld 260 °C 2 mm from case, ≤ 10 s 2

CAD (KiCad official)

  • Symbol: 4N38
  • Footprint: Package_DIP:DIP-6_W7.62mm
  • 3D model: DIP-6 (KiCad packages3D, STEP)
  • 3D model files: 4n38-etched.step / 4n38-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 4n38.step / 4n38.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (7 pp, sha256 dd251740aaddd42a, retrieved 2026-10-28, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF