component
4884
Public Made by Adomby adom
HL MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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4884
HL · MOSFETs · SOP-8
4884 from HL, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of N-channel MOSFET 1. |
| 2 | G1 | input | Gate of N-channel MOSFET 1; gate-source voltage limited to ±20 V. |
| 3 | S2 | passive | Source of N-channel MOSFET 2. |
| 4 | G2 | input | Gate of N-channel MOSFET 2; gate-source voltage limited to ±20 V. |
| 5 | D2 | passive | Drain of N-channel MOSFET 2; drain-source voltage rated 40 V. |
| 6 | D2 | passive | Drain of N-channel MOSFET 2, internally tied to pin 5; drain-source voltage rated 40 V. |
| 7 | D1 | passive | Drain of N-channel MOSFET 1; drain-source voltage rated 40 V. |
| 8 | D1 | passive | Drain of N-channel MOSFET 1, internally tied to pin 7; drain-source voltage rated 40 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HL |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 40 | V | 1 | |||
| Gate-Source Voltage | VGS | 20 | V | 1 | |||
| Continuous Drain Current | ID | 12 | A | @T=25℃ | 1 | ||
| Continuous Drain Current | ID | 7 | A | @T=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 40 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 31 | mJ | 1 | |||
| Avalanche Current | IAS | 10 | A | 1 | |||
| Total Power Dissipation | PD | 2.9 | W | @T=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient (t≤10s) | RθJA | 40 | ℃/W | t≤10s | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 65 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=40V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 12 | 16 | mΩ | VGS=10V, ID=8A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 18.9 | 24 | mΩ | VGS=4.5V, ID=4A | 2 | |
| Forward Transconductance | gFS | 33 | S | VDS=5V, ID=8A | 2 | ||
| Diode Forward Voltage | VSD | 0.8 | 1.2 | V | VGS=0V, IS=9A | 2 |
CAD (KiCad official)
- Symbol:
4884 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
4884-etched.step/4884-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);4884.step/4884.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HL datasheet (5 pp, sha256
fadbe1dd6a23d696, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 4884
**HL** · MOSFETs · SOP-8
4884 from HL, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of N-channel MOSFET 1. |
| 2 | G1 | input | Gate of N-channel MOSFET 1; gate-source voltage limited to ±20 V. |
| 3 | S2 | passive | Source of N-channel MOSFET 2. |
| 4 | G2 | input | Gate of N-channel MOSFET 2; gate-source voltage limited to ±20 V. |
| 5 | D2 | passive | Drain of N-channel MOSFET 2; drain-source voltage rated 40 V. |
| 6 | D2 | passive | Drain of N-channel MOSFET 2, internally tied to pin 5; drain-source voltage rated 40 V. |
| 7 | D1 | passive | Drain of N-channel MOSFET 1; drain-source voltage rated 40 V. |
| 8 | D1 | passive | Drain of N-channel MOSFET 1, internally tied to pin 7; drain-source voltage rated 40 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HL |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 40 | V | | 1 |
| Gate-Source Voltage | VGS | | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 12 | A | @T=25℃ | 1 |
| Continuous Drain Current | ID | | | 7 | A | @T=100℃ | 1 |
| Pulsed Drain Current | IDM | | | 40 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 31 | mJ | | 1 |
| Avalanche Current | IAS | | | 10 | A | | 1 |
| Total Power Dissipation | PD | | | 2.9 | W | @T=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-ambient (t≤10s) | RθJA | | | 40 | ℃/W | t≤10s | 1 |
| Thermal Resistance Junction-ambient | RθJA | | | 65 | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 40 | | | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=40V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 12 | 16 | mΩ | VGS=10V, ID=8A | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 18.9 | 24 | mΩ | VGS=4.5V, ID=4A | 2 |
| Forward Transconductance | gFS | 33 | | | S | VDS=5V, ID=8A | 2 |
| Diode Forward Voltage | VSD | | 0.8 | 1.2 | V | VGS=0V, IS=9A | 2 |
## CAD (KiCad official)
- Symbol: `4884`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `4884-etched.step` / `4884-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `4884.step` / `4884.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HL datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603006596046082048) (5 pp, sha256 `fadbe1dd6a23d696`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/4884-datasheet.pdf)