component

4884

Public Made by Adom

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HL MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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4884.lbr Publish 0.1.0 · Ray 7d ago
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4884

HL · MOSFETs · SOP-8

4884 from HL, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of N-channel MOSFET 1.
2 G1 input Gate of N-channel MOSFET 1; gate-source voltage limited to ±20 V.
3 S2 passive Source of N-channel MOSFET 2.
4 G2 input Gate of N-channel MOSFET 2; gate-source voltage limited to ±20 V.
5 D2 passive Drain of N-channel MOSFET 2; drain-source voltage rated 40 V.
6 D2 passive Drain of N-channel MOSFET 2, internally tied to pin 5; drain-source voltage rated 40 V.
7 D1 passive Drain of N-channel MOSFET 1; drain-source voltage rated 40 V.
8 D1 passive Drain of N-channel MOSFET 1, internally tied to pin 7; drain-source voltage rated 40 V.

Key specifications

Parameter Value
Manufacturer HL
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V 1
Gate-Source Voltage VGS 20 V 1
Continuous Drain Current ID 12 A @T=25℃ 1
Continuous Drain Current ID 7 A @T=100℃ 1
Pulsed Drain Current IDM 40 A 1
Single Pulse Avalanche Energy EAS 31 mJ 1
Avalanche Current IAS 10 A 1
Total Power Dissipation PD 2.9 W @T=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient (t≤10s) RθJA 40 ℃/W t≤10s 1
Thermal Resistance Junction-ambient RθJA 65 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 40 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=40V, VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.5 2 V VDS=VGS, ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 12 16 mΩ VGS=10V, ID=8A 2
Drain-Source On-State Resistance RDS(ON) 18.9 24 mΩ VGS=4.5V, ID=4A 2
Forward Transconductance gFS 33 S VDS=5V, ID=8A 2
Diode Forward Voltage VSD 0.8 1.2 V VGS=0V, IS=9A 2

CAD (KiCad official)

  • Symbol: 4884
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: 4884-etched.step / 4884-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 4884.step / 4884.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HL datasheet (5 pp, sha256 fadbe1dd6a23d696, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF