# 45P03

**HXY MOSFET** · MOSFETs · TO-252-2L

45P03 from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V, with RDS(on) specified at VGS = -10 V and -4.5 V and threshold VGS(th) of -1.0 to -2.0 V. |
| 2 | D | passive | Drain (exposed tab); drain-source voltage is -30 V and continuous drain current is -45 A at TC=25℃. |
| 3 | S | passive | Source; maximum continuous body-diode forward current is -50 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -30 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID@TC=25℃ |  |  | -45 | A | VGS @ -10V | 1 |
| Continuous Drain Current | ID@TC=100℃ |  |  | -33 | A | VGS @ -10V | 1 |
| Pulsed Drain Current | IDM |  |  | -200 | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 225 | mJ |  | 1 |
| Total Power Dissipation | PD@TC=25℃ |  |  | 62.5 | W |  | 1 |
| Total Power Dissipation | PD@TA=25℃ |  |  | 2 | W |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 62 | ℃/W |  | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 2.8 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -30 |  |  | V | VGS = 0 V, ID = -250 uA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | uA | VDS = -30 V, VGS = 0 V | 2 |
| Gate-Body Leakage Current, Forward | IGSSF |  |  | 100 | nA | VGS = 20V, VDS = 0 V | 2 |
| Gate-Body Leakage Current, Reverse | IGSSR |  |  | -100 | nA | VGS = -20V, VDS = 0 V | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -2 | V | VDS = VGS, ID = -250 uA | 2 |
| Static Drain-Source On-Resistance | RDS(on) |  | 9.3 | 12 | mΩ | VGS = -10 V, ID = -12A | 2 |
| Static Drain-Source On-Resistance | RDS(on) |  | 12.5 | 17 | mΩ | VGS = -4.5 V, ID = -7A | 2 |
| Maximum Continuous Drain-Source Diode Forward Current | IS |  |  | -50 | A |  | 2 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM |  |  | -200 | A |  | 2 |
| Drain to Source Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS = 0V, ISD = -10A, TJ = 25℃ | 2 |

## CAD (KiCad official)

- Symbol: `45P03`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files: `45p03-etched.step` / `45p03-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `45p03.step` / `45p03.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/45p03-datasheet.pdf) (8 pp, sha256 `df0c1a67d83c0496`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/45p03-datasheet.pdf)