component
45P03
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown45P03
HXY MOSFET · MOSFETs · TO-252-2L
45P03 from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V, with RDS(on) specified at VGS = -10 V and -4.5 V and threshold VGS(th) of -1.0 to -2.0 V. |
| 2 | D | passive | Drain (exposed tab); drain-source voltage is -30 V and continuous drain current is -45 A at TC=25℃. |
| 3 | S | passive | Source; maximum continuous body-diode forward current is -50 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | -45 | A | VGS @ -10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | -33 | A | VGS @ -10V | 1 | ||
| Pulsed Drain Current | IDM | -200 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 225 | mJ | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 62.5 | W | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 2 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 2.8 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS = 0 V, ID = -250 uA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | uA | VDS = -30 V, VGS = 0 V | 2 | ||
| Gate-Body Leakage Current, Forward | IGSSF | 100 | nA | VGS = 20V, VDS = 0 V | 2 | ||
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS = -20V, VDS = 0 V | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -2 | V | VDS = VGS, ID = -250 uA | 2 |
| Static Drain-Source On-Resistance | RDS(on) | 9.3 | 12 | mΩ | VGS = -10 V, ID = -12A | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 12.5 | 17 | mΩ | VGS = -4.5 V, ID = -7A | 2 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | -50 | A | 2 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | -200 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | -1.2 | V | VGS = 0V, ISD = -10A, TJ = 25℃ | 2 |
CAD (KiCad official)
- Symbol:
45P03 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
45p03-etched.step/45p03-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);45p03.step/45p03.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (8 pp, sha256
df0c1a67d83c0496, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).