# 4409

**KUU** · MOSFETs · SOP-8

4409 from KUU, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET; the absolute maximum drain-source voltage is -30 V (VDS) and the gate-source voltage is ±20 V (VGS). |
| 2 | S | passive | Source terminal of the P-channel MOSFET; the absolute maximum drain-source voltage is -30 V (VDS) and the gate-source voltage is ±20 V (VGS). |
| 3 | S | passive | Source terminal of the P-channel MOSFET; the absolute maximum drain-source voltage is -30 V (VDS) and the gate-source voltage is ±20 V (VGS). |
| 4 | G | input | Gate terminal of the P-channel MOSFET; gate-source voltage is rated ±20 V, and the device is specified for operation with gate voltages as low as 4.5 V. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET; drain-source voltage is rated -30 V and continuous drain current at TA=25°C is -15 A. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET; drain-source voltage is rated -30 V and continuous drain current at TA=25°C is -15 A. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET; drain-source voltage is rated -30 V and continuous drain current at TA=25°C is -15 A. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET; drain-source voltage is rated -30 V and continuous drain current at TA=25°C is -15 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | KUU |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -30 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current | ID |  |  | -15 | A | TA=25°C | 1 |
| Drain Current (Pulsed) | IDM |  |  | -60 | A | Repetitive rating: pulse width limited by maximum junction temperature | 1 |
| Avalanche Current | IAR |  |  | 30 | A |  | 1 |
| Repetitive Avalanche Energy | EAR |  |  | 135 | mJ | L=0.3mH | 1 |
| Total Power Dissipation | PD |  |  | 3.1 | W | TA=25°C | 1 |
| Total Power Dissipation | PD |  |  | 2.1 | W | TA=75°C | 1 |
| Maximum Diode Forward Current | IS |  |  | -2.1 | A |  | 1 |
| Operating Junction and Storage Temperature Range | Tj, Tstg | -55 |  | 150 | °C |  | 1 |
| Thermal Resistance Junction to Ambient (PCB mounted) | RθJA |  |  | 40 | °C/W | PCB mounted, 1-in² 2oz Cu PCB board | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -30 |  |  | V | VGS=0V, ID=-250uA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | uA | VDS=-24V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±25V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -3 | V | VDS=VGS, ID=-250uA | 2 |
| On State Drain Current | IDS(on) | 60 |  |  | A | VDS=-5V, VGS=-10V | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 13 | 15 | mΩ | VGS=-4.5V, ID=-12A | 2 |
| Gate Resistance | Rg | 1 | 2 | 3 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |
| Drain-Source Diode Forward Voltage | VSD |  |  | -1 | V | VGS=0V, IS=-1A | 2 |
| Drain-Source Diode Forward Current | IS |  |  | -2.1 | A |  | 2 |
| Reverse Recovery Time | trr |  | 33 | 40 | nS | IDS=-12A, dI/ dt=100A/ uS | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 12 |  | mΩ | VGS=-10V, ID=-15A | 2 |
| Forward Transconductance | gFS |  | 26 |  | S | VDS=-10V, ID=-5A | 2 |
| Output Capacitance | Coss |  | 410 |  | pF | VDS=-15V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 280 |  | pF | VDS=-15V, VGS=0V, f=1MHz | 2 |
| Total Gate Charge | Qg |  | 48 |  | nC | VDS=-15V, ID=-10A, VGS=-10V | 2 |
| Gate-Source Charge | Qgs |  | 12 |  | nC | VDS=-15V, ID=-10A, VGS=-10V | 2 |
| Gate-Drain Charge | Qgd |  | 14 |  | nC | VDS=-15V, ID=-10A, VGS=-10V | 2 |
| Turn-on Delay Time | td(on) |  | 15 |  | nS | VDD, VGS=-10V, RG=3Ω | 2 |
| Turn-on Rise Time | tr |  | 11 |  | nS | VDD, VGS=-10V, RG=3Ω | 2 |
| Turn-off Delay Time | td(off) |  | 44 |  | nS | VDD, VGS=-10V, RG=3Ω | 2 |
| Turn-off Fall Time | tf |  | 21 |  | nS | VDD, VGS=-10V, RG=3Ω | 2 |
| Reverse Recovery Charge | Qrr |  | 23 |  | nC | IDS=-12A, dI/ dt=100A/ uS | 2 |

## CAD (KiCad official)

- Symbol: `4409`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `4409-etched.step` / `4409-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `4409.step` / `4409.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [KUU datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588946202276057088) (6 pp, sha256 `717c9110fefc7ca0`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/4409-datasheet.pdf)