component
4409
Public Made by Adomby adom
KUU MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown4409
KUU · MOSFETs · SOP-8
4409 from KUU, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET; the absolute maximum drain-source voltage is -30 V (VDS) and the gate-source voltage is ±20 V (VGS). |
| 2 | S | passive | Source terminal of the P-channel MOSFET; the absolute maximum drain-source voltage is -30 V (VDS) and the gate-source voltage is ±20 V (VGS). |
| 3 | S | passive | Source terminal of the P-channel MOSFET; the absolute maximum drain-source voltage is -30 V (VDS) and the gate-source voltage is ±20 V (VGS). |
| 4 | G | input | Gate terminal of the P-channel MOSFET; gate-source voltage is rated ±20 V, and the device is specified for operation with gate voltages as low as 4.5 V. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET; drain-source voltage is rated -30 V and continuous drain current at TA=25°C is -15 A. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET; drain-source voltage is rated -30 V and continuous drain current at TA=25°C is -15 A. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET; drain-source voltage is rated -30 V and continuous drain current at TA=25°C is -15 A. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET; drain-source voltage is rated -30 V and continuous drain current at TA=25°C is -15 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KUU |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current | ID | -15 | A | TA=25°C | 1 | ||
| Drain Current (Pulsed) | IDM | -60 | A | Repetitive rating: pulse width limited by maximum junction temperature | 1 | ||
| Avalanche Current | IAR | 30 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 135 | mJ | L=0.3mH | 1 | ||
| Total Power Dissipation | PD | 3.1 | W | TA=25°C | 1 | ||
| Total Power Dissipation | PD | 2.1 | W | TA=75°C | 1 | ||
| Maximum Diode Forward Current | IS | -2.1 | A | 1 | |||
| Operating Junction and Storage Temperature Range | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Thermal Resistance Junction to Ambient (PCB mounted) | RθJA | 40 | °C/W | PCB mounted, 1-in² 2oz Cu PCB board | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V, ID=-250uA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | uA | VDS=-24V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±25V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -3 | V | VDS=VGS, ID=-250uA | 2 |
| On State Drain Current | IDS(on) | 60 | A | VDS=-5V, VGS=-10V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 13 | 15 | mΩ | VGS=-4.5V, ID=-12A | 2 | |
| Gate Resistance | Rg | 1 | 2 | 3 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |
| Drain-Source Diode Forward Voltage | VSD | -1 | V | VGS=0V, IS=-1A | 2 | ||
| Drain-Source Diode Forward Current | IS | -2.1 | A | 2 | |||
| Reverse Recovery Time | trr | 33 | 40 | nS | IDS=-12A, dI/ dt=100A/ uS | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 12 | mΩ | VGS=-10V, ID=-15A | 2 | ||
| Forward Transconductance | gFS | 26 | S | VDS=-10V, ID=-5A | 2 | ||
| Output Capacitance | Coss | 410 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 280 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | ||
| Total Gate Charge | Qg | 48 | nC | VDS=-15V, ID=-10A, VGS=-10V | 2 | ||
| Gate-Source Charge | Qgs | 12 | nC | VDS=-15V, ID=-10A, VGS=-10V | 2 | ||
| Gate-Drain Charge | Qgd | 14 | nC | VDS=-15V, ID=-10A, VGS=-10V | 2 | ||
| Turn-on Delay Time | td(on) | 15 | nS | VDD, VGS=-10V, RG=3Ω | 2 | ||
| Turn-on Rise Time | tr | 11 | nS | VDD, VGS=-10V, RG=3Ω | 2 | ||
| Turn-off Delay Time | td(off) | 44 | nS | VDD, VGS=-10V, RG=3Ω | 2 | ||
| Turn-off Fall Time | tf | 21 | nS | VDD, VGS=-10V, RG=3Ω | 2 | ||
| Reverse Recovery Charge | Qrr | 23 | nC | IDS=-12A, dI/ dt=100A/ uS | 2 |
CAD (KiCad official)
- Symbol:
4409 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
4409-etched.step/4409-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);4409.step/4409.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KUU datasheet (6 pp, sha256
717c9110fefc7ca0, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).