component
3N100G-TN3-R
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UTC Unisonic Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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3N100G-TN3-R
UTC Unisonic Tech · MOSFETs · TO-252
3N100G-TN3-R from UTC Unisonic Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; the gate-source voltage is rated at ±30 V (VGSS) in the absolute maximum ratings. |
| 2 | D | passive | Drain of the MOSFET; the drain-source voltage is rated at 1000 V (VDSS) with a continuous drain current of 3 A. |
| 3 | S | passive | Source of the MOSFET; it is the reference for the gate-source voltage and the body diode forward current ratings (IS 3 A, ISM 6 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 1000 | V | 3 | |||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 3 | ||
| Continuous Drain Current | ID | 3 | A | 3 | |||
| Pulsed Drain Current | IDM | 6 | A | 3 | |||
| Avalanche Energy Single Pulsed | EAS | 76 | mJ | 3 | |||
| Peak Diode Recovery dv/dt | dv/dt | 2.1 | V/ns | 3 | |||
| Power Dissipation | PD | 50 | W | TO-251/TO-252 | 3 | ||
| Junction Temperature | TJ | 150 | °C | 3 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 3 | ||
| Drain-Source Breakdown Voltage | BVDSS | 1000 | V | VGS=0V, ID=250μA | 4 | ||
| Drain-Source Leakage Current | IDSS | 10 | μA | VDS=1000V, VGS=0V | 4 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±30V, VDS=0V | 4 | |
| Gate Threshold Voltage | VGS(TH) | 3 | 5 | V | VDS=VGS, ID=250μA | 4 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 5.8 | Ω | VGS=10V, ID=1.5A | 4 | ||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 3 | A | 4 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 6 | A | 4 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | IS=3.0A, VGS=0V | 4 | ||
| Input Capacitance | CISS | 530 | pF | VDS=25V, VGS=0V, f=1MHz | 4 | ||
| Output Capacitance | COSS | 60 | pF | VDS=25V, VGS=0V, f=1MHz | 4 | ||
| Reverse Transfer Capacitance | CRSS | 6 | pF | VDS=25V, VGS=0V, f=1MHz | 4 | ||
| Total Gate Charge | QG | 15 | nC | VDS=800V, VGS=10V, ID=3A, IG=1mA (Note 1, 2) | 4 | ||
| Gate-Source Charge | QGS | 5 | nC | VDS=800V, VGS=10V, ID=3A, IG=1mA (Note 1, 2) | 4 | ||
| Gate-Drain Charge | QGD | 3.5 | nC | VDS=800V, VGS=10V, ID=3A, IG=1mA (Note 1, 2) | 4 | ||
| Turn-On Delay Time | tD(ON) | 9 | ns | VDD=100V, VGS=10V, ID=3A, RG=25Ω (Note 1, 2) | 4 | ||
| Turn-On Rise Time | tR | 17 | ns | VDD=100V, VGS=10V, ID=3A, RG=25Ω (Note 1, 2) | 4 | ||
| Turn-Off Delay Time | tD(OFF) | 46 | ns | VDD=100V, VGS=10V, ID=3A, RG=25Ω (Note 1, 2) | 4 | ||
| Turn-Off Fall Time | tF | 35 | ns | VDD=100V, VGS=10V, ID=3A, RG=25Ω (Note 1, 2) | 4 | ||
| Body Diode Reverse Recovery Time | trr | 628 | nS | IS=3.0A, VGS=0V, dIF/dt=100A/µs | 4 | ||
| Body Diode Reverse Recovery Charge | Qrr | 4 | μC | IS=3.0A, VGS=0V, dIF/dt=100A/µs | 4 | ||
| Junction to Ambient, TO-251/TO-252 | θJA | 110 | °C/W | TO-251/TO-252 | 3 | ||
| Junction to Case, TO-251/TO-252 | θJC | 2.5 | °C/W | TO-251/TO-252 | 3 |
CAD (KiCad official)
- Symbol:
3N100G-TN3-R - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
3n100g-tn3-r-etched.step/3n100g-tn3-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);3n100g-tn3-r.step/3n100g-tn3-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC Unisonic Tech datasheet (9 pp, sha256
f771c65ee2b9e987, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 3N100G-TN3-R
**UTC Unisonic Tech** · MOSFETs · TO-252
3N100G-TN3-R from UTC Unisonic Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; the gate-source voltage is rated at ±30 V (VGSS) in the absolute maximum ratings. |
| 2 | D | passive | Drain of the MOSFET; the drain-source voltage is rated at 1000 V (VDSS) with a continuous drain current of 3 A. |
| 3 | S | passive | Source of the MOSFET; it is the reference for the gate-source voltage and the body diode forward current ratings (IS 3 A, ISM 6 A). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 1000 | V | | 3 |
| Gate-Source Voltage | VGSS | -30 | | 30 | V | | 3 |
| Continuous Drain Current | ID | | | 3 | A | | 3 |
| Pulsed Drain Current | IDM | | | 6 | A | | 3 |
| Avalanche Energy Single Pulsed | EAS | | | 76 | mJ | | 3 |
| Peak Diode Recovery dv/dt | dv/dt | | | 2.1 | V/ns | | 3 |
| Power Dissipation | PD | | | 50 | W | TO-251/TO-252 | 3 |
| Junction Temperature | TJ | | | 150 | °C | | 3 |
| Storage Temperature | TSTG | -55 | | 150 | °C | | 3 |
| Drain-Source Breakdown Voltage | BVDSS | 1000 | | | V | VGS=0V, ID=250μA | 4 |
| Drain-Source Leakage Current | IDSS | | | 10 | μA | VDS=1000V, VGS=0V | 4 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±30V, VDS=0V | 4 |
| Gate Threshold Voltage | VGS(TH) | 3 | | 5 | V | VDS=VGS, ID=250μA | 4 |
| Static Drain-Source On-State Resistance | RDS(ON) | | | 5.8 | Ω | VGS=10V, ID=1.5A | 4 |
| Maximum Continuous Drain-Source Diode Forward Current | IS | | | 3 | A | | 4 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | | | 6 | A | | 4 |
| Drain-Source Diode Forward Voltage | VSD | | | 1.4 | V | IS=3.0A, VGS=0V | 4 |
| Input Capacitance | CISS | | 530 | | pF | VDS=25V, VGS=0V, f=1MHz | 4 |
| Output Capacitance | COSS | | 60 | | pF | VDS=25V, VGS=0V, f=1MHz | 4 |
| Reverse Transfer Capacitance | CRSS | | 6 | | pF | VDS=25V, VGS=0V, f=1MHz | 4 |
| Total Gate Charge | QG | | 15 | | nC | VDS=800V, VGS=10V, ID=3A, IG=1mA (Note 1, 2) | 4 |
| Gate-Source Charge | QGS | | 5 | | nC | VDS=800V, VGS=10V, ID=3A, IG=1mA (Note 1, 2) | 4 |
| Gate-Drain Charge | QGD | | 3.5 | | nC | VDS=800V, VGS=10V, ID=3A, IG=1mA (Note 1, 2) | 4 |
| Turn-On Delay Time | tD(ON) | | 9 | | ns | VDD=100V, VGS=10V, ID=3A, RG=25Ω (Note 1, 2) | 4 |
| Turn-On Rise Time | tR | | 17 | | ns | VDD=100V, VGS=10V, ID=3A, RG=25Ω (Note 1, 2) | 4 |
| Turn-Off Delay Time | tD(OFF) | | 46 | | ns | VDD=100V, VGS=10V, ID=3A, RG=25Ω (Note 1, 2) | 4 |
| Turn-Off Fall Time | tF | | 35 | | ns | VDD=100V, VGS=10V, ID=3A, RG=25Ω (Note 1, 2) | 4 |
| Body Diode Reverse Recovery Time | trr | | 628 | | nS | IS=3.0A, VGS=0V, dIF/dt=100A/µs | 4 |
| Body Diode Reverse Recovery Charge | Qrr | | 4 | | μC | IS=3.0A, VGS=0V, dIF/dt=100A/µs | 4 |
| Junction to Ambient, TO-251/TO-252 | θJA | | 110 | | °C/W | TO-251/TO-252 | 3 |
| Junction to Case, TO-251/TO-252 | θJC | | 2.5 | | °C/W | TO-251/TO-252 | 3 |
## CAD (KiCad official)
- Symbol: `3N100G-TN3-R`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `3n100g-tn3-r-etched.step` / `3n100g-tn3-r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `3n100g-tn3-r.step` / `3n100g-tn3-r.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UTC Unisonic Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590902687884402688) (9 pp, sha256 `f771c65ee2b9e987`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/3n100g-tn3-r-datasheet.pdf)