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Contents

README

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3N100G-TN3-R

UTC Unisonic Tech · MOSFETs · TO-252

3N100G-TN3-R from UTC Unisonic Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; the gate-source voltage is rated at ±30 V (VGSS) in the absolute maximum ratings.
2 D passive Drain of the MOSFET; the drain-source voltage is rated at 1000 V (VDSS) with a continuous drain current of 3 A.
3 S passive Source of the MOSFET; it is the reference for the gate-source voltage and the body diode forward current ratings (IS 3 A, ISM 6 A).

Key specifications

Parameter Value
Manufacturer UTC Unisonic Tech
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 1000 V 3
Gate-Source Voltage VGSS -30 30 V 3
Continuous Drain Current ID 3 A 3
Pulsed Drain Current IDM 6 A 3
Avalanche Energy Single Pulsed EAS 76 mJ 3
Peak Diode Recovery dv/dt dv/dt 2.1 V/ns 3
Power Dissipation PD 50 W TO-251/TO-252 3
Junction Temperature TJ 150 °C 3
Storage Temperature TSTG -55 150 °C 3
Drain-Source Breakdown Voltage BVDSS 1000 V VGS=0V, ID=250μA 4
Drain-Source Leakage Current IDSS 10 μA VDS=1000V, VGS=0V 4
Gate-Source Leakage Current IGSS -100 100 nA VGS=±30V, VDS=0V 4
Gate Threshold Voltage VGS(TH) 3 5 V VDS=VGS, ID=250μA 4
Static Drain-Source On-State Resistance RDS(ON) 5.8 Ω VGS=10V, ID=1.5A 4
Maximum Continuous Drain-Source Diode Forward Current IS 3 A 4
Maximum Pulsed Drain-Source Diode Forward Current ISM 6 A 4
Drain-Source Diode Forward Voltage VSD 1.4 V IS=3.0A, VGS=0V 4
Input Capacitance CISS 530 pF VDS=25V, VGS=0V, f=1MHz 4
Output Capacitance COSS 60 pF VDS=25V, VGS=0V, f=1MHz 4
Reverse Transfer Capacitance CRSS 6 pF VDS=25V, VGS=0V, f=1MHz 4
Total Gate Charge QG 15 nC VDS=800V, VGS=10V, ID=3A, IG=1mA (Note 1, 2) 4
Gate-Source Charge QGS 5 nC VDS=800V, VGS=10V, ID=3A, IG=1mA (Note 1, 2) 4
Gate-Drain Charge QGD 3.5 nC VDS=800V, VGS=10V, ID=3A, IG=1mA (Note 1, 2) 4
Turn-On Delay Time tD(ON) 9 ns VDD=100V, VGS=10V, ID=3A, RG=25Ω (Note 1, 2) 4
Turn-On Rise Time tR 17 ns VDD=100V, VGS=10V, ID=3A, RG=25Ω (Note 1, 2) 4
Turn-Off Delay Time tD(OFF) 46 ns VDD=100V, VGS=10V, ID=3A, RG=25Ω (Note 1, 2) 4
Turn-Off Fall Time tF 35 ns VDD=100V, VGS=10V, ID=3A, RG=25Ω (Note 1, 2) 4
Body Diode Reverse Recovery Time trr 628 nS IS=3.0A, VGS=0V, dIF/dt=100A/µs 4
Body Diode Reverse Recovery Charge Qrr 4 μC IS=3.0A, VGS=0V, dIF/dt=100A/µs 4
Junction to Ambient, TO-251/TO-252 θJA 110 °C/W TO-251/TO-252 3
Junction to Case, TO-251/TO-252 θJC 2.5 °C/W TO-251/TO-252 3

CAD (KiCad official)

  • Symbol: 3N100G-TN3-R
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: 3n100g-tn3-r-etched.step / 3n100g-tn3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 3n100g-tn3-r.step / 3n100g-tn3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC Unisonic Tech datasheet (9 pp, sha256 f771c65ee2b9e987, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF