# 3N10-MS

**MSKSEMI** · MOSFETs · SOT-23

3N10-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20 V maximum and threshold VGS(th) of 1.0 to 2.5 V at ID=250 µA. |
| 2 | S | passive | Source of the N-channel MOSFET; body diode anode, continuous diode current up to 5 A. |
| 3 | D | passive | Drain; VDS rated 100 V maximum, continuous drain current 3.0 A at TA=25℃ and 12 A pulsed. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 100 | V |  | 2 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 2 |
| Continuous Drain Current | ID |  |  | 3 | A | TA=25℃, VGS @ 10V | 2 |
| Continuous Drain Current | ID |  |  | 2.2 | A | TA=70℃, VGS @ 10V | 2 |
| Pulsed Drain Current | IDM |  |  | 12 | A |  | 2 |
| Total Power Dissipation | PD |  |  | 1 | W | TA=25℃ | 2 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 2 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 2 |
| Thermal Resistance Junction-ambient | RθJA |  |  | 74 | ℃/W |  | 2 |
| Thermal Resistance Junction-Case | RθJC |  |  | 80 | ℃/W |  | 2 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 |  |  | V | VGS=0V, ID=250μA | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=100V, VGS=0V | 3 |
| Gate to Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 3 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS=VGS, ID=250μA | 3 |
| Static Drain-Source on-Resistance | RDS(on) |  | 90 | 110 | mΩ | VGS=10V, ID=3A | 3 |
| Static Drain-Source on-Resistance | RDS(on) |  | 120 | 150 | mΩ | VGS=4.5V, ID=2A | 3 |
| Maximum Continuous Drain to Source Diode Forward Current | IS |  |  | 5 | A |  | 3 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM |  |  | 12 | A |  | 3 |
| Drain to Source Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=3A | 3 |

## CAD (KiCad official)

- Symbol: `3N10-MS`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `3n10-ms-etched.step` / `3n10-ms-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `3n10-ms.step` / `3n10-ms.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MSKSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8555434948802555904) (7 pp, sha256 `2beeb6752b141bb8`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/3n10-ms-datasheet.pdf)