component
3N10-MS
Public Made by Adomby adom
MSKSEMI MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 11d ago |
| viewers | 11d ago |
| 3n10-ms-etched.glb | 11d ago |
| 3n10-ms-etched.step | 11d ago |
| 3n10-ms-hero.glb | 11d ago |
| 3n10-ms-hero.overlay.json | 11d ago |
| 3n10-ms.glb | 11d ago |
| 3n10-ms.kicad_mod | 11d ago |
| 3n10-ms.kicad_sym | 11d ago |
| 3n10-ms.lbr | 11d ago |
| 3n10-ms.step | 11d ago |
| package.json | 11d ago |
| page.json | 11d ago |
| README.md | 11d ago |
3N10-MS
MSKSEMI · MOSFETs · SOT-23
3N10-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20 V maximum and threshold VGS(th) of 1.0 to 2.5 V at ID=250 µA. |
| 2 | S | passive | Source of the N-channel MOSFET; body diode anode, continuous diode current up to 5 A. |
| 3 | D | passive | Drain; VDS rated 100 V maximum, continuous drain current 3.0 A at TA=25℃ and 12 A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | 3 | A | TA=25℃, VGS @ 10V | 2 | ||
| Continuous Drain Current | ID | 2.2 | A | TA=70℃, VGS @ 10V | 2 | ||
| Pulsed Drain Current | IDM | 12 | A | 2 | |||
| Total Power Dissipation | PD | 1 | W | TA=25℃ | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance Junction-ambient | RθJA | 74 | ℃/W | 2 | |||
| Thermal Resistance Junction-Case | RθJC | 80 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | V | VGS=0V, ID=250μA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=100V, VGS=0V | 3 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 3 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS=VGS, ID=250μA | 3 |
| Static Drain-Source on-Resistance | RDS(on) | 90 | 110 | mΩ | VGS=10V, ID=3A | 3 | |
| Static Drain-Source on-Resistance | RDS(on) | 120 | 150 | mΩ | VGS=4.5V, ID=2A | 3 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 5 | A | 3 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 12 | A | 3 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=3A | 3 |
CAD (KiCad official)
- Symbol:
3N10-MS - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
3n10-ms-etched.step/3n10-ms-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);3n10-ms.step/3n10-ms.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (7 pp, sha256
2beeb6752b141bb8, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).