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3DD13005GRD

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by adom

Wuxi China Resources Huajing Microelectronics Bipolar Transistors - BJT, TO-262-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3DD13005GRD

Wuxi China Resources Huajing Microelectronics · Bipolar Transistors - BJT · TO-262-3

3DD13005GRD from Wuxi China Resources Huajing Microelectronics, in a TO-262-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; VEBO max 9 V, continuous IB 2 A, pulsed IBM 4 A (tp<5ms).
2 C passive Collector (also the tab); VCBO 700 V, VCEO 400 V, continuous IC 4 A, pulsed ICM 8 A (tp<5ms).
3 E passive Emitter of the NPN transistor; connected to the collector through the integrated diode, with forward voltage Vf max 2.5 V at If = 2 A.

Key specifications

Parameter Value
Manufacturer Wuxi China Resources Huajing Microelectronics
Package TO-262-3
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO 700 V 1
Collector-emitter voltage VCEO 400 V 1
Emitter-base voltage VEBO 9 V 1
Collector current DC IC 4 A 1
Collector current pulse ICM 8 A tp<5ms 1
Base current DC IB 2 A 1
Base current pulse IBM 4 A tp<5ms 1
Total power dissipation Ptot 2 W Ta=25℃ 1
Total power dissipation Ptot 75 W Tc=25℃ 1
Junction temperature Tj 150 ℃ 1
Storage temperature Tstg -55 150 ℃ 1
Thermal resistance junction to case RθJC 1.7 ℃/W 1
Thermal resistance junction to ambient RθJA 62.5 ℃/W 1
Collector-base breakdown voltage VCBO 700 V IC=0.1mA 2
Collector-emitter breakdown voltage VCEO 400 V IC=1mA 2
Emitter-base breakdown voltage VEBO 9 V IE=0.1mA 2
Collector-base cutoff current ICBO 0.1 mA VCB=700V, IE=0 2
Collector-emitter cutoff current ICEO 0.1 mA VCE=400V, IB=0 2
Emitter-base cutoff current IEBO 0.1 mA VEB=9V, IC=0 2
Static forward current transfer ratio hFE 15 30 VCE=5V, IC=1A 2
Ratio of hFE1 to hFE2 hFE1/hFE2 0.6 0.7 hFE1: VCE=5V, IC=50mA; hFE2: VCE=5V, IC=1A 2
Collector-emitter saturation voltage VCE sat 0.25 1 V IC=2A, IB=0.5A 2
Base-emitter saturation voltage VBE sat 0.95 1.5 V IC=2A, IB=0.5A 2
Diode forward voltage Vf 2.5 V If = 2 A 2
Storage time ts 1.5 3 μs 2
Rise time tr 1 μs 2
Fall time tf 0.8 μs UI9600，IC=0.5A 2
Transition frequency fT 5 MHz VCE=10V, IC=0.5A, f=1MHz 2

CAD (KiCad official)

  • Symbol: 3DD13005GRD
  • Footprint: Package_TO_SOT_THT:TO-262-3_Vertical
  • 3D model: TO-262-3 (KiCad packages3D, STEP)
  • 3D model files: 3dd13005grd-etched.step / 3dd13005grd-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 3dd13005grd.step / 3dd13005grd.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi China Resources Huajing Microelectronics datasheet (4 pp, sha256 3db863e18af7741b, retrieved 2026-10-28, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF