component
3DD13005GRD
Public Made by Adomby adom
Wuxi China Resources Huajing Microelectronics Bipolar Transistors - BJT, TO-262-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 4d ago |
| viewers | 4d ago |
| 3dd13005grd-etched.glb | 4d ago |
| 3dd13005grd-etched.step | 4d ago |
| 3dd13005grd-hero.glb | 4d ago |
| 3dd13005grd-hero.overlay.json | 4d ago |
| 3dd13005grd.glb | 4d ago |
| 3dd13005grd.kicad_mod | 4d ago |
| 3dd13005grd.kicad_sym | 4d ago |
| 3dd13005grd.lbr | 4d ago |
| 3dd13005grd.step | 4d ago |
| package.json | 4d ago |
| page.json | 4d ago |
| README.md | 4d ago |
3DD13005GRD
Wuxi China Resources Huajing Microelectronics · Bipolar Transistors - BJT · TO-262-3
3DD13005GRD from Wuxi China Resources Huajing Microelectronics, in a TO-262-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; VEBO max 9 V, continuous IB 2 A, pulsed IBM 4 A (tp<5ms). |
| 2 | C | passive | Collector (also the tab); VCBO 700 V, VCEO 400 V, continuous IC 4 A, pulsed ICM 8 A (tp<5ms). |
| 3 | E | passive | Emitter of the NPN transistor; connected to the collector through the integrated diode, with forward voltage Vf max 2.5 V at If = 2 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi China Resources Huajing Microelectronics |
| Package | TO-262-3 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | 700 | V | 1 | |||
| Collector-emitter voltage | VCEO | 400 | V | 1 | |||
| Emitter-base voltage | VEBO | 9 | V | 1 | |||
| Collector current DC | IC | 4 | A | 1 | |||
| Collector current pulse | ICM | 8 | A | tp<5ms | 1 | ||
| Base current DC | IB | 2 | A | 1 | |||
| Base current pulse | IBM | 4 | A | tp<5ms | 1 | ||
| Total power dissipation | Ptot | 2 | W | Ta=25℃ | 1 | ||
| Total power dissipation | Ptot | 75 | W | Tc=25℃ | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance junction to case | RθJC | 1.7 | ℃/W | 1 | |||
| Thermal resistance junction to ambient | RθJA | 62.5 | ℃/W | 1 | |||
| Collector-base breakdown voltage | VCBO | 700 | V | IC=0.1mA | 2 | ||
| Collector-emitter breakdown voltage | VCEO | 400 | V | IC=1mA | 2 | ||
| Emitter-base breakdown voltage | VEBO | 9 | V | IE=0.1mA | 2 | ||
| Collector-base cutoff current | ICBO | 0.1 | mA | VCB=700V, IE=0 | 2 | ||
| Collector-emitter cutoff current | ICEO | 0.1 | mA | VCE=400V, IB=0 | 2 | ||
| Emitter-base cutoff current | IEBO | 0.1 | mA | VEB=9V, IC=0 | 2 | ||
| Static forward current transfer ratio | hFE | 15 | 30 | VCE=5V, IC=1A | 2 | ||
| Ratio of hFE1 to hFE2 | hFE1/hFE2 | 0.6 | 0.7 | hFE1: VCE=5V, IC=50mA; hFE2: VCE=5V, IC=1A | 2 | ||
| Collector-emitter saturation voltage | VCE sat | 0.25 | 1 | V | IC=2A, IB=0.5A | 2 | |
| Base-emitter saturation voltage | VBE sat | 0.95 | 1.5 | V | IC=2A, IB=0.5A | 2 | |
| Diode forward voltage | Vf | 2.5 | V | If = 2 A | 2 | ||
| Storage time | ts | 1.5 | 3 | μs | 2 | ||
| Rise time | tr | 1 | μs | 2 | |||
| Fall time | tf | 0.8 | μs | UI9600，IC=0.5A | 2 | ||
| Transition frequency | fT | 5 | MHz | VCE=10V, IC=0.5A, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
3DD13005GRD - Footprint:
Package_TO_SOT_THT:TO-262-3_Vertical - 3D model: TO-262-3 (KiCad packages3D, STEP)
- 3D model files:
3dd13005grd-etched.step/3dd13005grd-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);3dd13005grd.step/3dd13005grd.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi China Resources Huajing Microelectronics datasheet (4 pp, sha256
3db863e18af7741b, retrieved 2026-10-28, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).