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2SK950-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SK950-VB

VBsemi Elec · MOSFETs · TO-220AB

2SK950-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±30 V with threshold VGS(th) of 2.0 to 4.0 V at 250 µA.
2 D passive Drain; drain-source voltage rated 600 V with continuous current of 8.0 A at TC = 25 °C (5.8 A at 100 °C).
3 S passive Source; body diode continuous current of 9.2 A and pulsed 37 A, with a forward drop of up to 1.5 V.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 600 V TC = 25 °C 1
Gate-Source Voltage VGS -30 30 V TC = 25 °C 1
Continuous Drain Current ID 8 A VGS at 10 V, TC = 25 °C 1
Continuous Drain Current ID 5.8 A VGS at 10 V, TC = 100 °C 1
Pulsed Drain Current IDM 37 A 1
Linear Derating Factor 1.3 W/°C 1
Single Pulse Avalanche Energy EAS 290 mJ Starting TJ = 25 °C, L = 6.8 mH, Rg = 25, IAS = 9.2 A 1
Repetitive Avalanche Current IAR 8 A 1
Repetitive Avalanche Energy EAR 17 mJ 1
Maximum Power Dissipation PD 170 W TC = 25 °C 1
Peak Diode Recovery dV/dt dV/dt 5 V/ns ISD ≤ 9.2 A, dI/dt ≤ 50 A/μs, VDD ≤ VDS, TJ ≤ 150 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak temperature) 300 °C for 10 s, 1.6 mm from case 1
Maximum Junction-to-Ambient RthJA 62 °C/W 2
Case-to-Sink, Flat, Greased Surface RthCS 0.5 °C/W 2
Maximum Junction-to-Case (Drain) RthJC 0.75 °C/W 2
Drain-Source Breakdown Voltage VDS 600 V VGS = 0 V, ID = 250 μA 2
VDS Temperature Coefficient ΔVDS/TJ 660 mV/°C Reference to 25 °C, ID = 1 mA 2
Gate-Source Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ± 30 V 2
Zero Gate Voltage Drain Current IDSS 25 μA VDS = 600 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 250 μA VDS = 480 V, VGS = 0 V, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 0.78 Ω VGS = 10 V, ID = 5.5 A 2
Forward Transconductance gfs 5.5 S VDS = 50 V, ID = 5.5 A 2
Gate Input Resistance Rg 0.5 3.2 Ω f = 1 MHz, open drain 2
Total Gate Charge Qg 49 nC ID = 8.0 A, VDS = 400 V, VGS = 10 V 2
Gate-Source Charge Qgs 13 nC ID = 8.0 A, VDS = 400 V, VGS = 10 V 2
Gate-Drain Charge Qgd 20 nC ID = 8.0 A, VDS = 400 V, VGS = 10 V 2
Continuous Source-Drain Diode Current IS 9.2 A 2
Pulsed Diode Forward Current ISM 37 A 2
Body Diode Voltage VSD 1.5 V TJ = 25 °C, IS = 8.0 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 530 800 ns TJ = 25 °C, IF = 8.0 A, dI/dt = 100 A/μs 2
Body Diode Reverse Recovery Charge Qrr 3 4.4 μC TJ = 25 °C, IF = 8.0 A, dI/dt = 100 A/μs 2
Input Capacitance Ciss 1400 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz 2
Output Capacitance Coss 180 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz 2
Reverse Transfer Capacitance Crss 7.1 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz 2
Turn-On Delay Time td(on) 13 ns VDD = 300 V, ID = 8.0 A, Rg = 9.1, RD = 35.5 2
Rise Time tr 25 ns VDD = 300 V, ID = 8.0 A, Rg = 9.1, RD = 35.5 2
Turn-Off Delay Time td(off) 30 ns VDD = 300 V, ID = 8.0 A, Rg = 9.1, RD = 35.5 2
Fall Time tf 22 ns VDD = 300 V, ID = 8.0 A, Rg = 9.1, RD = 35.5 2

CAD (KiCad official)

  • Symbol: 2SK950-VB
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: 2sk950-vb-etched.step / 2sk950-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sk950-vb.step / 2sk950-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 fa3e43e8274440b3, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF