component
2SK950-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2SK950-VB
VBsemi Elec · MOSFETs · TO-220AB
2SK950-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±30 V with threshold VGS(th) of 2.0 to 4.0 V at 250 µA. |
| 2 | D | passive | Drain; drain-source voltage rated 600 V with continuous current of 8.0 A at TC = 25 °C (5.8 A at 100 °C). |
| 3 | S | passive | Source; body diode continuous current of 9.2 A and pulsed 37 A, with a forward drop of up to 1.5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 600 | V | TC = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -30 | 30 | V | TC = 25 °C | 1 | |
| Continuous Drain Current | ID | 8 | A | VGS at 10 V, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 5.8 | A | VGS at 10 V, TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 37 | A | 1 | |||
| Linear Derating Factor | 1.3 | W/°C | 1 | ||||
| Single Pulse Avalanche Energy | EAS | 290 | mJ | Starting TJ = 25 °C, L = 6.8 mH, Rg = 25, IAS = 9.2 A | 1 | ||
| Repetitive Avalanche Current | IAR | 8 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 17 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 170 | W | TC = 25 °C | 1 | ||
| Peak Diode Recovery dV/dt | dV/dt | 5 | V/ns | ISD ≤ 9.2 A, dI/dt ≤ 50 A/μs, VDD ≤ VDS, TJ ≤ 150 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Recommendations (Peak temperature) | 300 | °C | for 10 s, 1.6 mm from case | 1 | |||
| Maximum Junction-to-Ambient | RthJA | 62 | °C/W | 2 | |||
| Case-to-Sink, Flat, Greased Surface | RthCS | 0.5 | °C/W | 2 | |||
| Maximum Junction-to-Case (Drain) | RthJC | 0.75 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | VDS | 600 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| VDS Temperature Coefficient | ΔVDS/TJ | 660 | mV/°C | Reference to 25 °C, ID = 1 mA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ± 30 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 25 | μA | VDS = 600 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | μA | VDS = 480 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.78 | Ω | VGS = 10 V, ID = 5.5 A | 2 | ||
| Forward Transconductance | gfs | 5.5 | S | VDS = 50 V, ID = 5.5 A | 2 | ||
| Gate Input Resistance | Rg | 0.5 | 3.2 | Ω | f = 1 MHz, open drain | 2 | |
| Total Gate Charge | Qg | 49 | nC | ID = 8.0 A, VDS = 400 V, VGS = 10 V | 2 | ||
| Gate-Source Charge | Qgs | 13 | nC | ID = 8.0 A, VDS = 400 V, VGS = 10 V | 2 | ||
| Gate-Drain Charge | Qgd | 20 | nC | ID = 8.0 A, VDS = 400 V, VGS = 10 V | 2 | ||
| Continuous Source-Drain Diode Current | IS | 9.2 | A | 2 | |||
| Pulsed Diode Forward Current | ISM | 37 | A | 2 | |||
| Body Diode Voltage | VSD | 1.5 | V | TJ = 25 °C, IS = 8.0 A, VGS = 0 V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 530 | 800 | ns | TJ = 25 °C, IF = 8.0 A, dI/dt = 100 A/μs | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 3 | 4.4 | μC | TJ = 25 °C, IF = 8.0 A, dI/dt = 100 A/μs | 2 | |
| Input Capacitance | Ciss | 1400 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Output Capacitance | Coss | 180 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 7.1 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Turn-On Delay Time | td(on) | 13 | ns | VDD = 300 V, ID = 8.0 A, Rg = 9.1, RD = 35.5 | 2 | ||
| Rise Time | tr | 25 | ns | VDD = 300 V, ID = 8.0 A, Rg = 9.1, RD = 35.5 | 2 | ||
| Turn-Off Delay Time | td(off) | 30 | ns | VDD = 300 V, ID = 8.0 A, Rg = 9.1, RD = 35.5 | 2 | ||
| Fall Time | tf | 22 | ns | VDD = 300 V, ID = 8.0 A, Rg = 9.1, RD = 35.5 | 2 |
CAD (KiCad official)
- Symbol:
2SK950-VB - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
2sk950-vb-etched.step/2sk950-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sk950-vb.step/2sk950-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
fa3e43e8274440b3, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).