component
2SK3018W
Public Made by Adomby adom
hongjiacheng MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
Ray
2sk3018w: specified limits as data (metadata.characteristics, 15 rows from the datasheet)
9fa8d1c
9d ago
2SK3018W
hongjiacheng · MOSFETs · SOT-323
2SK3018W from hongjiacheng, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET, with an integrated gate protection diode; VGS is rated ±20 V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, rated for a drain-source voltage VDS of 30 V. |
| 3 | D | passive | Drain terminal of the N-channel MOSFET, rated for 30 V VDS and 0.1 A continuous drain current (0.4 A pulsed). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | hongjiacheng |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS | 30 | V | 1 | |||
| Gate-source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current | Id | 0.1 | A | 1 | |||
| Pulsed Drain Current | IDM | 0.4 | A | 1 | |||
| Total Power Dissipation | Pd | 200 | mW | 1 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Junction temperature | Tj | -55 | 150 | ℃ | 1 | ||
| Typical Thermal Resistance | RθJ-A | 625 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -10 | 10 | μA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.8 | 1.5 | V | VDS=3.0V, ID=0.1mA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 8 | Ω | VGS=4.0V, ID=10mA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 13 | Ω | VGS=2.5V, ID=1.0mA | 2 | ||
| Forward Transconductance | gfs | 20 | mS | VDS=3.0V, ID=10mA | 2 |
CAD (KiCad official)
- Symbol:
2SK3018W - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
2sk3018w-etched.step/2sk3018w-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sk3018w.step/2sk3018w.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: hongjiacheng datasheet (4 pp, sha256
35056c72c14f565a, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 2SK3018W
**hongjiacheng** · MOSFETs · SOT-323
2SK3018W from hongjiacheng, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET, with an integrated gate protection diode; VGS is rated ±20 V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, rated for a drain-source voltage VDS of 30 V. |
| 3 | D | passive | Drain terminal of the N-channel MOSFET, rated for 30 V VDS and 0.1 A continuous drain current (0.4 A pulsed). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | hongjiacheng |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS | | | 30 | V | | 1 |
| Gate-source Voltage | VGS | -20 | | 20 | V | | 1 |
| Drain Current | Id | | | 0.1 | A | | 1 |
| Pulsed Drain Current | IDM | | | 0.4 | A | | 1 |
| Total Power Dissipation | Pd | | | 200 | mW | | 1 |
| Storage temperature | Tstg | -55 | | 150 | ℃ | | 1 |
| Junction temperature | Tj | -55 | | 150 | ℃ | | 1 |
| Typical Thermal Resistance | RθJ-A | | 625 | | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=30V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -10 | | 10 | μA | VGS=±20V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.8 | | 1.5 | V | VDS=3.0V, ID=0.1mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 8 | Ω | VGS=4.0V, ID=10mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 13 | Ω | VGS=2.5V, ID=1.0mA | 2 |
| Forward Transconductance | gfs | 20 | | | mS | VDS=3.0V, ID=10mA | 2 |
## CAD (KiCad official)
- Symbol: `2SK3018W`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `2sk3018w-etched.step` / `2sk3018w-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sk3018w.step` / `2sk3018w.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [hongjiacheng datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8772513589904969728) (4 pp, sha256 `35056c72c14f565a`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/2sk3018w-datasheet.pdf)