component
2SK3018W
Public Made by Adomby adom
hongjiacheng MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2sk3018w: specified limits as data (metadata.characteristics, 15 rows from the datasheet)
2 files changed
+210−1
README.md+22@@ -21,6 +21,28 @@ | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source Voltage | VDS | | | 30 | V | | 1 |+| Gate-source Voltage | VGS | -20 | | 20 | V | | 1 |+| Drain Current | Id | | | 0.1 | A | | 1 |+| Pulsed Drain Current | IDM | | | 0.4 | A | | 1 |+| Total Power Dissipation | Pd | | | 200 | mW | | 1 |+| Storage temperature | Tstg | -55 | | 150 | ℃ | | 1 |+| Junction temperature | Tj | -55 | | 150 | ℃ | | 1 |+| Typical Thermal Resistance | RθJ-A | | 625 | | ℃/W | | 1 |+| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V, ID=250μA | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=30V, VGS=0V | 2 |+| Gate-Body Leakage Current | IGSS | -10 | | 10 | μA | VGS=±20V, VDS=0V | 2 |+| Gate Threshold Voltage | VGS(th) | 0.8 | | 1.5 | V | VDS=3.0V, ID=0.1mA | 2 |+| Static Drain-Source On-Resistance | RDS(ON) | | | 8 | Ω | VGS=4.0V, ID=10mA | 2 |+| Static Drain-Source On-Resistance | RDS(ON) | | | 13 | Ω | VGS=2.5V, ID=1.0mA | 2 |+| Forward Transconductance | gfs | 20 | | | mS | VDS=3.0V, ID=10mA | 2 |+ ## CAD (KiCad official) - Symbol: `2SK3018W`
page.json+188−1@@ -149,6 +149,193 @@ "Package": "SOT-323", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "35056c72c14f565a",+ "rows": [+ {+ "name": "Drain-source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current",+ "symbol": "Id",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.1,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.4,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Power Dissipation",+ "symbol": "Pd",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction temperature",+ "symbol": "Tj",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Typical Thermal Resistance",+ "symbol": "RθJ-A",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 625,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=30V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "μA",+ "min": -10,+ "typ": null,+ "max": 10,+ "conditions": "VGS=±20V, VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 0.8,+ "typ": null,+ "max": 1.5,+ "conditions": "VDS=3.0V, ID=0.1mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 8,+ "conditions": "VGS=4.0V, ID=10mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 13,+ "conditions": "VGS=2.5V, ID=1.0mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "mS",+ "min": 20,+ "typ": null,+ "max": null,+ "conditions": "VDS=3.0V, ID=10mA",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -190,4 +377,4 @@ "visibility": { "public": true }-}+}