# 2SK1658-T1-A-VB

**VBsemi Elec** · MOSFETs · SOT-323(SC-70)

2SK1658-T1-A-VB from VBsemi Elec, in a SOT-323(SC-70). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; the gate-source voltage is rated at ±12 V (VGS). |
| 2 | S | passive | Source terminal of the N-channel MOSFET; the continuous source-drain diode current is rated at 2.3 A at TC = 25 °C. |
| 3 | D | passive | Drain terminal of the N-channel MOSFET; the drain-source voltage is rated at 20 V (VDS) and the continuous drain current at 4 A at TC = 25 °C (package limited). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-323(SC-70) |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 20 | V |  | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 4 | A | TJ = 150 °C; TC = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | 3.6 | A | TJ = 150 °C; TC = 70 °C | 1 |
| Continuous Drain Current | ID |  |  | 3.7 | A | TJ = 150 °C; TA = 70 °C | 1 |
| Pulsed Drain Current | IDM |  |  | 20 | A | t = 300 µs | 1 |
| Continuous Source-Drain Diode Current | IS |  |  | 2.3 | A | TC = 25 °C | 1 |
| Continuous Source-Drain Diode Current | IS |  |  | 1.3 | A | TA = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 2.8 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 1.8 | W | TC = 70 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 1.56 | W | TA = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 1 | W | TA = 70 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Maximum Junction-to-Ambient | RthJA |  | 60 | 80 | °C/W | t ≤ 5 s | 1 |
| Maximum Junction-to-Ambient | RthJA |  |  | 125 | °C/W | Steady state (footnote d) | 1 |
| Maximum Junction-to-Foot (Drain) | RthJF |  | 34 | 45 | °C/W | Steady state | 1 |
| Drain-Source Breakdown Voltage | VDS | 20 |  |  | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 0.6 |  | 1.3 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Source Leakage | IGSS | -0.5 |  | 0.5 | µA | VDS = 0 V, VGS = ±4.5 V | 2 |
| Gate-Source Leakage | IGSS | -25 |  | 25 | µA | VDS = 0 V, VGS = ±12 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS = 20 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | µA | VDS = 20 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | 15 |  |  | A | VDS ≥ 5 V, VGS = 4.5 V | 2 |
| Gate Resistance | Rg | 0.4 | 2 | 4 | kΩ | f = 1 MHz | 2 |
| Total Gate Charge | Qg |  | 8.8 | 13.5 | nC | VDS = 15 V, VGS = 10 V, ID = 3.7 A | 2 |
| Body Diode Voltage | VSD |  | 0.85 | 1.2 | V | IS = 3.7 A, VGS = 0 V | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 5 | 10 | nC |  | 2 |
| Body Diode Reverse Recovery Time | trr |  | 2 | 25 | ns | IF = 3.7 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Turn-On Delay Time | td(on) |  | 0.29 | 0.58 | µs | VDD = 15 V, RL = 4.1 Ω, ID 3.7 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Rise Time | tr |  | 0.4 | 0.8 | µs | VDD = 15 V, RL = 4.1 Ω, ID 3.7 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 1.9 | 3.8 | µs | VDD = 15 V, RL = 4.1 Ω, ID 3.7 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Fall Time | tf |  | 0.75 | 1.5 | µs | VDD = 15 V, RL = 4.1 Ω, ID 3.7 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Turn-On Delay Time | td(on) |  | 0.1 | 0.2 | µs | VDD = 15 V, RL = 4.1 Ω, ID 3.7 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Rise Time | tr |  | 0.15 | 0.3 | µs | VDD = 15 V, RL = 4.1 Ω, ID 3.7 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Continuous Source-Drain Diode Current | IS |  |  | 2.3 | A | TC = 25 °C | 2 |
| Pulse Diode Forward Current | ISM |  |  | 20 | A |  | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 0.036 |  | Ω | VGS = 10 V, ID = 3.7 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 0.04 |  | Ω | VGS = 4.5 V, ID = 3.6 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 0.048 |  | Ω | VGS = 2.5 V, ID = 1.5 A | 2 |
| Forward Transconductance | gfs |  | 17 |  | S | VDS = 15 V, ID = 3.7 A | 2 |
| Total Gate Charge | Qg |  | 46 |  | nC | VDS = 15 V, VGS = 4.5 V, ID = 3.7 A | 2 |
| Gate-Source Charge | Qgs |  | 0.9 |  | nC |  | 2 |
| Gate-Drain Charge | Qgd |  | 1.1 |  | nC |  | 2 |
| Turn-Off Delay Time | td(off) |  | 36 |  | µs | VDD = 15 V, RL = 4.1 Ω, ID 3.7 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Reverse Recovery Fall Time | ta |  | 6.5 |  | ns |  | 2 |
| Reverse Recovery Rise Time | tb |  | 5.5 |  | ns |  | 2 |
| VDS Temperature Coefficient | VDS/TJ |  | 23 |  | mV/°C | ID = 250 µA | 2 |
| VGS(th) Temperature Coefficient | VGS(th)/TJ |  | -3.2 |  | mV/°C |  | 2 |

## CAD (KiCad official)

- Symbol: `2SK1658-T1-A-VB`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323(SC-70) (KiCad packages3D, STEP)
- 3D model files: `2sk1658-t1-a-vb-etched.step` / `2sk1658-t1-a-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sk1658-t1-a-vb.step` / `2sk1658-t1-a-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/2sk1658-t1-a-vb-datasheet.pdf) (9 pp, sha256 `e1b029297bbf2388`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/2sk1658-t1-a-vb-datasheet.pdf)