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2SK1658-T1-A-VB

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VBsemi Elec MOSFETs, SOT-323(SC-70). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SK1658-T1-A-VB

VBsemi Elec · MOSFETs · SOT-323(SC-70)

2SK1658-T1-A-VB from VBsemi Elec, in a SOT-323(SC-70). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; the gate-source voltage is rated at ±12 V (VGS).
2 S passive Source terminal of the N-channel MOSFET; the continuous source-drain diode current is rated at 2.3 A at TC = 25 °C.
3 D passive Drain terminal of the N-channel MOSFET; the drain-source voltage is rated at 20 V (VDS) and the continuous drain current at 4 A at TC = 25 °C (package limited).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-323(SC-70)
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID 4 A TJ = 150 °C; TC = 25 °C 1
Continuous Drain Current ID 3.6 A TJ = 150 °C; TC = 70 °C 1
Continuous Drain Current ID 3.7 A TJ = 150 °C; TA = 70 °C 1
Pulsed Drain Current IDM 20 A t = 300 µs 1
Continuous Source-Drain Diode Current IS 2.3 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 1.3 A TA = 25 °C 1
Maximum Power Dissipation PD 2.8 W TC = 25 °C 1
Maximum Power Dissipation PD 1.8 W TC = 70 °C 1
Maximum Power Dissipation PD 1.56 W TA = 25 °C 1
Maximum Power Dissipation PD 1 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 60 80 °C/W t ≤ 5 s 1
Maximum Junction-to-Ambient RthJA 125 °C/W Steady state (footnote d) 1
Maximum Junction-to-Foot (Drain) RthJF 34 45 °C/W Steady state 1
Drain-Source Breakdown Voltage VDS 20 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 0.6 1.3 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -0.5 0.5 µA VDS = 0 V, VGS = ±4.5 V 2
Gate-Source Leakage IGSS -25 25 µA VDS = 0 V, VGS = ±12 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 20 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 15 A VDS ≥ 5 V, VGS = 4.5 V 2
Gate Resistance Rg 0.4 2 4 kΩ f = 1 MHz 2
Total Gate Charge Qg 8.8 13.5 nC VDS = 15 V, VGS = 10 V, ID = 3.7 A 2
Body Diode Voltage VSD 0.85 1.2 V IS = 3.7 A, VGS = 0 V 2
Body Diode Reverse Recovery Charge Qrr 5 10 nC 2
Body Diode Reverse Recovery Time trr 2 25 ns IF = 3.7 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Turn-On Delay Time td(on) 0.29 0.58 µs VDD = 15 V, RL = 4.1 Ω, ID 3.7 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time tr 0.4 0.8 µs VDD = 15 V, RL = 4.1 Ω, ID 3.7 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 1.9 3.8 µs VDD = 15 V, RL = 4.1 Ω, ID 3.7 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time tf 0.75 1.5 µs VDD = 15 V, RL = 4.1 Ω, ID 3.7 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 0.1 0.2 µs VDD = 15 V, RL = 4.1 Ω, ID 3.7 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 0.15 0.3 µs VDD = 15 V, RL = 4.1 Ω, ID 3.7 A, VGEN = 10 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS 2.3 A TC = 25 °C 2
Pulse Diode Forward Current ISM 20 A 2
Drain-Source On-State Resistance RDS(on) 0.036 Ω VGS = 10 V, ID = 3.7 A 2
Drain-Source On-State Resistance RDS(on) 0.04 Ω VGS = 4.5 V, ID = 3.6 A 2
Drain-Source On-State Resistance RDS(on) 0.048 Ω VGS = 2.5 V, ID = 1.5 A 2
Forward Transconductance gfs 17 S VDS = 15 V, ID = 3.7 A 2
Total Gate Charge Qg 46 nC VDS = 15 V, VGS = 4.5 V, ID = 3.7 A 2
Gate-Source Charge Qgs 0.9 nC 2
Gate-Drain Charge Qgd 1.1 nC 2
Turn-Off Delay Time td(off) 36 µs VDD = 15 V, RL = 4.1 Ω, ID 3.7 A, VGEN = 10 V, Rg = 1 Ω 2
Reverse Recovery Fall Time ta 6.5 ns 2
Reverse Recovery Rise Time tb 5.5 ns 2
VDS Temperature Coefficient VDS/TJ 23 mV/°C ID = 250 µA 2
VGS(th) Temperature Coefficient VGS(th)/TJ -3.2 mV/°C 2

CAD (KiCad official)

  • Symbol: 2SK1658-T1-A-VB
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323(SC-70) (KiCad packages3D, STEP)
  • 3D model files: 2sk1658-t1-a-vb-etched.step / 2sk1658-t1-a-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sk1658-t1-a-vb.step / 2sk1658-t1-a-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 e1b029297bbf2388, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF