# 2SJ211-VB

**VBsemi Elec** · MOSFETs · SOT-23(TO-236)

2SJ211-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V with threshold of -1.0 V to -3.0 V at ID = -250 µA. |
| 2 | S | passive | Source; continuous source current (diode conduction) of -1.4 A (5 s) / -1.0 A (steady state). |
| 3 | D | passive | Drain; drain-source voltage of -100 V, continuous drain current of -1.5 A steady state at TA = 25 °C, with RDS(on) of 0.50 Ω at VGS = -10 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -100 | V | TA = 25 °C | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | TA = 25 °C | 1 |
| Continuous Drain Current, 5 s | ID |  |  | -1.65 | A | TJ = 150 °C, TA = 25 °C, 5 s | 1 |
| Continuous Drain Current, steady state | ID |  |  | -1.5 | A | TJ = 150 °C, TA = 25 °C, steady state | 1 |
| Continuous Drain Current, 5 s | ID |  |  | -1.55 | A | TJ = 150 °C, TA = 70 °C, 5 s | 1 |
| Continuous Drain Current, steady state | ID |  |  | -1.4 | A | TJ = 150 °C, TA = 70 °C, steady state | 1 |
| Pulsed Drain Current | IDM |  |  | -3 | A |  | 1 |
| Continuous Source Current, 5 s | IS |  |  | -1.4 | A | Diode conduction, 5 s | 1 |
| Continuous Source Current, steady state | IS |  |  | -1 | A | Diode conduction, steady state | 1 |
| Single Pulse Avalanche Current | IAS |  |  | 4.5 | A | L = 1.0 mH | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 1.01 | mJ | L = 1.0 mH | 1 |
| Maximum Power Dissipation, 5 s | PD |  |  | 2 | W | TA = 25 °C, 5 s | 1 |
| Maximum Power Dissipation, steady state | PD |  |  | 0.85 | W | TA = 25 °C, steady state | 1 |
| Maximum Power Dissipation, 5 s | PD |  |  | 1 | W | TA = 70 °C, 5 s | 1 |
| Maximum Power Dissipation, steady state | PD |  |  | 0.58 | W | TA = 70 °C, steady state | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Junction-to-Ambient Thermal Resistance, t ≤ 5 s | RthJA |  | 75 | 100 | °C/W | t ≤ 5 s | 1 |
| Junction-to-Ambient Thermal Resistance, steady state | RthJA |  | 120 | 166 | °C/W | Steady State | 1 |
| Junction-to-Foot (Drain) Thermal Resistance | RthJF |  | 40 | 50 | °C/W | Steady State | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | -100 |  |  | V | VGS = 0 V, ID = - 250 µA | 2 |
| Gate-Threshold Voltage | VGS(th) | -1 |  | -3 | V | VDS = VGS, ID = - 250 µA | 2 |
| Gate-Body Leakage | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | µA | VDS = - 100 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -10 | µA | VDS = - 100 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | -1.6 |  |  | A | VDS ≤ - 15 V, VGS = 10 V | 2 |
| Drain-Source On-Resistance | RDS(on) |  |  | 0.5 | Ω | VGS = - 10 V, ID = - 0.5 A | 2 |
| Drain-Source On-Resistance | RDS(on) |  |  | 0.56 | Ω | VGS = - 6.0 V, ID = - 0.5 A | 2 |
| Diode Forward Voltage | VSD |  | 0.7 | -1.2 | V | IS = - 1.0 A, VGS = 0 V | 2 |
| Total Gate Charge | Qg |  | 7.7 | 12 | nC | VDS = - 50 V, VGS = 10 V, ID ≅ - 0.5 A | 2 |
| Turn-On Delay Time | td(on) |  | 7 | 11 | ns | VDD = - 50 V, RL = 75 Ω, ID ≅ - 1.0 A, VGEN = - 10 V, Rg = 6 Ω | 2 |
| Rise Time | tr |  | 11 | 17 | ns | VDD = - 50 V, RL = 75 Ω, ID ≅ - 1.0 A, VGEN = - 10 V, Rg = 6 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 16 | 25 | ns | VDD = - 50 V, RL = 75 Ω, ID ≅ - 1.0 A, VGEN = - 10 V, Rg = 6 Ω | 2 |
| Fall Time | tf |  | 11 | 17 | ns | VDD = - 50 V, RL = 75 Ω, ID ≅ - 1.0 A, VGEN = - 10 V, Rg = 6 Ω | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 90 | 135 | nC | IF = 0.5 A, dI/dt = 100 A/µs | 2 |
| Forward Transconductance | gfs |  | 2.2 |  | S | VDS = - 15 V, ID = - 0.5 A | 2 |
| Gate-Source Charge | Qgs |  | 1.5 |  | nC | VDS = - 50 V, VGS = 10 V, ID ≅ - 0.5 A | 2 |
| Gate-Drain Charge | Qgd |  | 2.5 |  | nC | VDS = - 50 V, VGS = 10 V, ID ≅ - 0.5 A | 2 |
| Gate Resistance | Rg |  | 9 |  | Ω | f = 1.0 MHz | 2 |
| Input Capacitance | Ciss |  | 520 |  | pF | VDS = - 25 V, VGS = 0 V, f = 1 MHz | 2 |
| Output Capacitance | Coss |  | 40 |  | pF | VDS = - 25 V, VGS = 0 V, f = 1 MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 20 |  | pF | VDS = - 25 V, VGS = 0 V, f = 1 MHz | 2 |

## CAD (KiCad official)

- Symbol: `2SJ211-VB`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files: `2sj211-vb-etched.step` / `2sj211-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sj211-vb.step` / `2sj211-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/2sj211-vb-datasheet.pdf) (8 pp, sha256 `1f17311eef38beda`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/2sj211-vb-datasheet.pdf)