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2SJ211-VB

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VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SJ211-VB

VBsemi Elec · MOSFETs · SOT-23(TO-236)

2SJ211-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V with threshold of -1.0 V to -3.0 V at ID = -250 µA.
2 S passive Source; continuous source current (diode conduction) of -1.4 A (5 s) / -1.0 A (steady state).
3 D passive Drain; drain-source voltage of -100 V, continuous drain current of -1.5 A steady state at TA = 25 °C, with RDS(on) of 0.50 Ω at VGS = -10 V.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23(TO-236)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -100 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
Continuous Drain Current, 5 s ID -1.65 A TJ = 150 °C, TA = 25 °C, 5 s 1
Continuous Drain Current, steady state ID -1.5 A TJ = 150 °C, TA = 25 °C, steady state 1
Continuous Drain Current, 5 s ID -1.55 A TJ = 150 °C, TA = 70 °C, 5 s 1
Continuous Drain Current, steady state ID -1.4 A TJ = 150 °C, TA = 70 °C, steady state 1
Pulsed Drain Current IDM -3 A 1
Continuous Source Current, 5 s IS -1.4 A Diode conduction, 5 s 1
Continuous Source Current, steady state IS -1 A Diode conduction, steady state 1
Single Pulse Avalanche Current IAS 4.5 A L = 1.0 mH 1
Single Pulse Avalanche Energy EAS 1.01 mJ L = 1.0 mH 1
Maximum Power Dissipation, 5 s PD 2 W TA = 25 °C, 5 s 1
Maximum Power Dissipation, steady state PD 0.85 W TA = 25 °C, steady state 1
Maximum Power Dissipation, 5 s PD 1 W TA = 70 °C, 5 s 1
Maximum Power Dissipation, steady state PD 0.58 W TA = 70 °C, steady state 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance, t ≤ 5 s RthJA 75 100 °C/W t ≤ 5 s 1
Junction-to-Ambient Thermal Resistance, steady state RthJA 120 166 °C/W Steady State 1
Junction-to-Foot (Drain) Thermal Resistance RthJF 40 50 °C/W Steady State 1
Drain-Source Breakdown Voltage V(BR)DSS -100 V VGS = 0 V, ID = - 250 µA 2
Gate-Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = - 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = - 100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = - 100 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -1.6 A VDS ≤ - 15 V, VGS = 10 V 2
Drain-Source On-Resistance RDS(on) 0.5 Ω VGS = - 10 V, ID = - 0.5 A 2
Drain-Source On-Resistance RDS(on) 0.56 Ω VGS = - 6.0 V, ID = - 0.5 A 2
Diode Forward Voltage VSD 0.7 -1.2 V IS = - 1.0 A, VGS = 0 V 2
Total Gate Charge Qg 7.7 12 nC VDS = - 50 V, VGS = 10 V, ID ≅ - 0.5 A 2
Turn-On Delay Time td(on) 7 11 ns VDD = - 50 V, RL = 75 Ω, ID ≅ - 1.0 A, VGEN = - 10 V, Rg = 6 Ω 2
Rise Time tr 11 17 ns VDD = - 50 V, RL = 75 Ω, ID ≅ - 1.0 A, VGEN = - 10 V, Rg = 6 Ω 2
Turn-Off Delay Time td(off) 16 25 ns VDD = - 50 V, RL = 75 Ω, ID ≅ - 1.0 A, VGEN = - 10 V, Rg = 6 Ω 2
Fall Time tf 11 17 ns VDD = - 50 V, RL = 75 Ω, ID ≅ - 1.0 A, VGEN = - 10 V, Rg = 6 Ω 2
Body Diode Reverse Recovery Charge Qrr 90 135 nC IF = 0.5 A, dI/dt = 100 A/µs 2
Forward Transconductance gfs 2.2 S VDS = - 15 V, ID = - 0.5 A 2
Gate-Source Charge Qgs 1.5 nC VDS = - 50 V, VGS = 10 V, ID ≅ - 0.5 A 2
Gate-Drain Charge Qgd 2.5 nC VDS = - 50 V, VGS = 10 V, ID ≅ - 0.5 A 2
Gate Resistance Rg 9 Ω f = 1.0 MHz 2
Input Capacitance Ciss 520 pF VDS = - 25 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 40 pF VDS = - 25 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 20 pF VDS = - 25 V, VGS = 0 V, f = 1 MHz 2

CAD (KiCad official)

  • Symbol: 2SJ211-VB
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
  • 3D model files: 2sj211-vb-etched.step / 2sj211-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sj211-vb.step / 2sj211-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 1f17311eef38beda, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF