component
2SD669AG-C-AB3-R
Public Made by Adomby adom
UTC(Unisonic Tech) Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2SD669AG-C-AB3-R
UTC(Unisonic Tech) · Bipolar Transistors - BJT · SOT-89
2SD669AG-C-AB3-R from UTC(Unisonic Tech), in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; the datasheet gives an absolute maximum base current IB of 0.5 A. |
| 2 | C | passive | Collector of the NPN transistor; the datasheet gives an absolute maximum collector current IC of 1.5 A and a collector peak current of 3 A. |
| 3 | E | passive | Emitter of the NPN transistor; the datasheet gives an absolute maximum emitter-base voltage VEBO of 5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC(Unisonic Tech) |
| Package | SOT-89 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage (2SD669A) | VCEO | 160 | V | 3 | |||
| Collector-Base Voltage | VCBO | 180 | V | 3 | |||
| Emitter-Base Voltage | VEBO | 5 | V | 3 | |||
| Collector Current | IC | 1.5 | A | 3 | |||
| Collector Peak Current | IC(PEAK) | 3 | A | 3 | |||
| Base Current | IB | 0.5 | A | 3 | |||
| Power Dissipation (SOT-89) | PD | 0.5 | W | SOT-223/ SOT-89 | 3 | ||
| Junction Temperature | TJ | 150 | °C | 3 | |||
| Storage Temperature | TSTG | -40 | 150 | °C | 3 | ||
| Junction to Case (SOT-89) | θJC | 38 | °C/W | SOT-89 | 3 | ||
| Collector to Base Breakdown Voltage | BVCBO | 180 | V | IC=1mA, IE=0 | 4 | ||
| Collector to Emitter Breakdown Voltage (2SD669A) | BVCEO | 160 | V | IC=10mA, RBE= | 4 | ||
| Collector to Emitter Breakdown Voltage (VBE=0V, 2SD669A) | BVCES | 160 | V | IC=1mA, VBE=0V | 4 | ||
| Emitter to Base Breakdown Voltage | BVEBO | 5 | V | IE=1mA, IC=0 | 4 | ||
| Collector Cut-off Current | ICBO | 10 | μA | VCB=160V, IE=0 | 4 | ||
| Emitter Cutoff Current | IEBO | 10 | μA | VEB=4V, IC=0 | 4 | ||
| DC Current Gain (rank C) | hFE1 | 100 | 200 | VCE=5V, IC=150mA (Note) | 4 | ||
| DC Current Gain | hFE2 | 30 | VCE=5V, IC=500mA (Note) | 4 | |||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 1 | V | IC=600mA, IB=50mA (Note) | 4 | ||
| Base-Emitter Saturation Voltage | VBE(SAT) | 1.2 | V | IC=600mA, IB=50mA (Note) | 4 | ||
| Base-Emitter Voltage | VBE | 1.5 | V | VCE=5V, IC=150mA (Note) | 4 |
CAD (KiCad official)
- Symbol:
2SD669AG-C-AB3-R - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2sd669ag-c-ab3-r-etched.step/2sd669ag-c-ab3-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sd669ag-c-ab3-r.step/2sd669ag-c-ab3-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC(Unisonic Tech) datasheet (6 pp, sha256
9b6a53e317fe398c, retrieved 2026-10-21, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 2SD669AG-C-AB3-R
**UTC(Unisonic Tech)** · Bipolar Transistors - BJT · SOT-89
2SD669AG-C-AB3-R from UTC(Unisonic Tech), in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; the datasheet gives an absolute maximum base current IB of 0.5 A. |
| 2 | C | passive | Collector of the NPN transistor; the datasheet gives an absolute maximum collector current IC of 1.5 A and a collector peak current of 3 A. |
| 3 | E | passive | Emitter of the NPN transistor; the datasheet gives an absolute maximum emitter-base voltage VEBO of 5 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC(Unisonic Tech) |
| Package | SOT-89 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage (2SD669A) | VCEO | | | 160 | V | | 3 |
| Collector-Base Voltage | VCBO | | | 180 | V | | 3 |
| Emitter-Base Voltage | VEBO | | | 5 | V | | 3 |
| Collector Current | IC | | | 1.5 | A | | 3 |
| Collector Peak Current | IC(PEAK) | | | 3 | A | | 3 |
| Base Current | IB | | | 0.5 | A | | 3 |
| Power Dissipation (SOT-89) | PD | | | 0.5 | W | SOT-223/ SOT-89 | 3 |
| Junction Temperature | TJ | | | 150 | °C | | 3 |
| Storage Temperature | TSTG | -40 | | 150 | °C | | 3 |
| Junction to Case (SOT-89) | θJC | | 38 | | °C/W | SOT-89 | 3 |
| Collector to Base Breakdown Voltage | BVCBO | 180 | | | V | IC=1mA, IE=0 | 4 |
| Collector to Emitter Breakdown Voltage (2SD669A) | BVCEO | 160 | | | V | IC=10mA, RBE= | 4 |
| Collector to Emitter Breakdown Voltage (VBE=0V, 2SD669A) | BVCES | 160 | | | V | IC=1mA, VBE=0V | 4 |
| Emitter to Base Breakdown Voltage | BVEBO | 5 | | | V | IE=1mA, IC=0 | 4 |
| Collector Cut-off Current | ICBO | | | 10 | μA | VCB=160V, IE=0 | 4 |
| Emitter Cutoff Current | IEBO | | | 10 | μA | VEB=4V, IC=0 | 4 |
| DC Current Gain (rank C) | hFE1 | 100 | | 200 | | VCE=5V, IC=150mA (Note) | 4 |
| DC Current Gain | hFE2 | 30 | | | | VCE=5V, IC=500mA (Note) | 4 |
| Collector-Emitter Saturation Voltage | VCE(SAT) | | | 1 | V | IC=600mA, IB=50mA (Note) | 4 |
| Base-Emitter Saturation Voltage | VBE(SAT) | | | 1.2 | V | IC=600mA, IB=50mA (Note) | 4 |
| Base-Emitter Voltage | VBE | | | 1.5 | V | VCE=5V, IC=150mA (Note) | 4 |
## CAD (KiCad official)
- Symbol: `2SD669AG-C-AB3-R`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `2sd669ag-c-ab3-r-etched.step` / `2sd669ag-c-ab3-r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sd669ag-c-ab3-r.step` / `2sd669ag-c-ab3-r.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UTC(Unisonic Tech) datasheet](docs/2sd669ag-c-ab3-r-datasheet.pdf) (6 pp, sha256 `9b6a53e317fe398c`, retrieved 2026-10-21, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/2sd669ag-c-ab3-r-datasheet.pdf)