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2SD669AG-C-AB3-R

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UTC(Unisonic Tech) Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SD669AG-C-AB3-R

UTC(Unisonic Tech) · Bipolar Transistors - BJT · SOT-89

2SD669AG-C-AB3-R from UTC(Unisonic Tech), in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; the datasheet gives an absolute maximum base current IB of 0.5 A.
2 C passive Collector of the NPN transistor; the datasheet gives an absolute maximum collector current IC of 1.5 A and a collector peak current of 3 A.
3 E passive Emitter of the NPN transistor; the datasheet gives an absolute maximum emitter-base voltage VEBO of 5 V.

Key specifications

Parameter Value
Manufacturer UTC(Unisonic Tech)
Package SOT-89
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage (2SD669A) VCEO 160 V 3
Collector-Base Voltage VCBO 180 V 3
Emitter-Base Voltage VEBO 5 V 3
Collector Current IC 1.5 A 3
Collector Peak Current IC(PEAK) 3 A 3
Base Current IB 0.5 A 3
Power Dissipation (SOT-89) PD 0.5 W SOT-223/ SOT-89 3
Junction Temperature TJ 150 °C 3
Storage Temperature TSTG -40 150 °C 3
Junction to Case (SOT-89) θJC 38 °C/W SOT-89 3
Collector to Base Breakdown Voltage BVCBO 180 V IC=1mA, IE=0 4
Collector to Emitter Breakdown Voltage (2SD669A) BVCEO 160 V IC=10mA, RBE= 4
Collector to Emitter Breakdown Voltage (VBE=0V, 2SD669A) BVCES 160 V IC=1mA, VBE=0V 4
Emitter to Base Breakdown Voltage BVEBO 5 V IE=1mA, IC=0 4
Collector Cut-off Current ICBO 10 μA VCB=160V, IE=0 4
Emitter Cutoff Current IEBO 10 μA VEB=4V, IC=0 4
DC Current Gain (rank C) hFE1 100 200 VCE=5V, IC=150mA (Note) 4
DC Current Gain hFE2 30 VCE=5V, IC=500mA (Note) 4
Collector-Emitter Saturation Voltage VCE(SAT) 1 V IC=600mA, IB=50mA (Note) 4
Base-Emitter Saturation Voltage VBE(SAT) 1.2 V IC=600mA, IB=50mA (Note) 4
Base-Emitter Voltage VBE 1.5 V VCE=5V, IC=150mA (Note) 4

CAD (KiCad official)

  • Symbol: 2SD669AG-C-AB3-R
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: 2sd669ag-c-ab3-r-etched.step / 2sd669ag-c-ab3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sd669ag-c-ab3-r.step / 2sd669ag-c-ab3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC(Unisonic Tech) datasheet (6 pp, sha256 9b6a53e317fe398c, retrieved 2026-10-21, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF