component
2SD2211T100R
Public Made by Adomby adom
ROHM Semicon Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2SD2211T100R
ROHM Semicon · Bipolar (BJT) · SOT-89
2SD2211T100R from ROHM Semicon, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the 2SD2211 transistor; the datasheet gives emitter-base breakdown BVEBO of 5 V minimum at IE = 50 µA and an absolute maximum VEBO of 5 V. |
| 2 | Collector | passive | Collector terminal; absolute maximum ratings are VCBO 160 V, VCEO 160 V, and DC collector current IC 1.5 A (pulse rating given in footnote 1). |
| 3 | Emitter | passive | Emitter terminal, referenced by the VEBO absolute maximum of 5 V and the VBE(sat) and VCE(sat) test conditions (IC/IB = 1 A/0.1 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | 160 | V | IC = 50µA | 1 | ||
| Collector-emitter breakdown voltage | BVCEO | 160 | V | IC = 1mA | 1 | ||
| Emitter-base breakdown voltage | BVEBO | 5 | V | IE = 50µA | 1 | ||
| Collector cutoff current | ICBO | 1 | µA | VCB = 120V | 1 | ||
| Emitter cutoff current | IEBO | 1 | µA | VEB = 4V | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | 2 | V | IC/IB = 1A/0.1A | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | 1.5 | V | IC/IB = 1A/0.1A | 1 | ||
| DC current transfer ratio | hFE | 82 | 270 | VCE/IC = 5V/0.1A | 1 | ||
| Collector-base voltage | VCBO | 160 | V | Ta = 25°C | 1 | ||
| Collector-emitter voltage | VCEO | 160 | V | Ta = 25°C | 1 | ||
| Emitter-base voltage | VEBO | 5 | V | Ta = 25°C | 1 | ||
| Collector current (DC) | IC | 1.5 | A(DC) | Ta = 25°C | 1 | ||
| Collector current (pulse) | 3 | A(Pulse) | Single pulse Pw=100ms (note 1) | 1 | |||
| Collector power dissipation | PC | 1 | W | Ta = 25°C | 1 | ||
| Collector power dissipation | PC | 2 | W | Printed circuit board 1.7mm thick, collector plating 1cm2 or larger (note 2) | 1 | ||
| Collector power dissipation | PC | 10 | W | Tc = 25°C | 1 | ||
| Junction temperature | Tj | 150 | °C | 1 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
2SD2211T100R - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2sd2211t100r-etched.step/2sd2211t100r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sd2211t100r.step/2sd2211t100r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (1 pp, sha256
fe02091b5fade21d, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 2SD2211T100R
**ROHM Semicon** · Bipolar (BJT) · SOT-89
2SD2211T100R from ROHM Semicon, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the 2SD2211 transistor; the datasheet gives emitter-base breakdown BVEBO of 5 V minimum at IE = 50 µA and an absolute maximum VEBO of 5 V. |
| 2 | Collector | passive | Collector terminal; absolute maximum ratings are VCBO 160 V, VCEO 160 V, and DC collector current IC 1.5 A (pulse rating given in footnote 1). |
| 3 | Emitter | passive | Emitter terminal, referenced by the VEBO absolute maximum of 5 V and the VBE(sat) and VCE(sat) test conditions (IC/IB = 1 A/0.1 A). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | 160 | | | V | IC = 50µA | 1 |
| Collector-emitter breakdown voltage | BVCEO | 160 | | | V | IC = 1mA | 1 |
| Emitter-base breakdown voltage | BVEBO | 5 | | | V | IE = 50µA | 1 |
| Collector cutoff current | ICBO | | | 1 | µA | VCB = 120V | 1 |
| Emitter cutoff current | IEBO | | | 1 | µA | VEB = 4V | 1 |
| Collector-emitter saturation voltage | VCE(sat) | | | 2 | V | IC/IB = 1A/0.1A | 1 |
| Base-emitter saturation voltage | VBE(sat) | | | 1.5 | V | IC/IB = 1A/0.1A | 1 |
| DC current transfer ratio | hFE | 82 | | 270 | | VCE/IC = 5V/0.1A | 1 |
| Collector-base voltage | VCBO | | | 160 | V | Ta = 25°C | 1 |
| Collector-emitter voltage | VCEO | | | 160 | V | Ta = 25°C | 1 |
| Emitter-base voltage | VEBO | | | 5 | V | Ta = 25°C | 1 |
| Collector current (DC) | IC | | | 1.5 | A(DC) | Ta = 25°C | 1 |
| Collector current (pulse) | | | | 3 | A(Pulse) | Single pulse Pw=100ms (note 1) | 1 |
| Collector power dissipation | PC | | | 1 | W | Ta = 25°C | 1 |
| Collector power dissipation | PC | | | 2 | W | Printed circuit board 1.7mm thick, collector plating 1cm2 or larger (note 2) | 1 |
| Collector power dissipation | PC | | | 10 | W | Tc = 25°C | 1 |
| Junction temperature | Tj | | | 150 | °C | | 1 |
| Storage temperature | Tstg | -55 | | 150 | °C | | 1 |
## CAD (KiCad official)
- Symbol: `2SD2211T100R`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `2sd2211t100r-etched.step` / `2sd2211t100r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sd2211t100r.step` / `2sd2211t100r.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ROHM Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586181976172998656) (1 pp, sha256 `fe02091b5fade21d`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/2sd2211t100r-datasheet.pdf)