Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

2SD2211T100R

ROHM Semicon · Bipolar (BJT) · SOT-89

2SD2211T100R from ROHM Semicon, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base terminal of the 2SD2211 transistor; the datasheet gives emitter-base breakdown BVEBO of 5 V minimum at IE = 50 µA and an absolute maximum VEBO of 5 V.
2 Collector passive Collector terminal; absolute maximum ratings are VCBO 160 V, VCEO 160 V, and DC collector current IC 1.5 A (pulse rating given in footnote 1).
3 Emitter passive Emitter terminal, referenced by the VEBO absolute maximum of 5 V and the VBE(sat) and VCE(sat) test conditions (IC/IB = 1 A/0.1 A).

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage BVCBO 160 V IC = 50µA 1
Collector-emitter breakdown voltage BVCEO 160 V IC = 1mA 1
Emitter-base breakdown voltage BVEBO 5 V IE = 50µA 1
Collector cutoff current ICBO 1 µA VCB = 120V 1
Emitter cutoff current IEBO 1 µA VEB = 4V 1
Collector-emitter saturation voltage VCE(sat) 2 V IC/IB = 1A/0.1A 1
Base-emitter saturation voltage VBE(sat) 1.5 V IC/IB = 1A/0.1A 1
DC current transfer ratio hFE 82 270 VCE/IC = 5V/0.1A 1
Collector-base voltage VCBO 160 V Ta = 25°C 1
Collector-emitter voltage VCEO 160 V Ta = 25°C 1
Emitter-base voltage VEBO 5 V Ta = 25°C 1
Collector current (DC) IC 1.5 A(DC) Ta = 25°C 1
Collector current (pulse) 3 A(Pulse) Single pulse Pw=100ms (note 1) 1
Collector power dissipation PC 1 W Ta = 25°C 1
Collector power dissipation PC 2 W Printed circuit board 1.7mm thick, collector plating 1cm2 or larger (note 2) 1
Collector power dissipation PC 10 W Tc = 25°C 1
Junction temperature Tj 150 °C 1
Storage temperature Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: 2SD2211T100R
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: 2sd2211t100r-etched.step / 2sd2211t100r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sd2211t100r.step / 2sd2211t100r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (1 pp, sha256 fe02091b5fade21d, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF