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2SD1624S-TD-E

Public Made by Adom

by adom

onsemi Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SD1624S-TD-E

onsemi · Bipolar Transistors - BJT · SOT-89

2SD1624S-TD-E from onsemi, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base of the NPN transistor 2SD1624; VEBO max 6 V and IC max 3 A (6 A pulse).
2 Collector passive Collector of the NPN transistor 2SD1624; VCEO 50 V, VCBO 60 V, IC max 3 A (6 A pulse).
3 Emitter passive Emitter of the NPN transistor 2SD1624; VEBO max 6 V relative to base.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-89
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-to-Base Voltage VCBO 60 V Ta=25°C 1
Collector-to-Emitter Voltage VCEO 50 V Ta=25°C 1
Emitter-to-Base Voltage VEBO 6 V Ta=25°C 1
Collector Current IC 3 A Ta=25°C 1
Collector Current (Pulse) ICP 6 A Ta=25°C 1
Collector Dissipation PC 500 mW Ta=25°C 2
Collector Dissipation (ceramic substrate) PC 1.5 W When mounted on ceramic substrate (250mm2×0.8mm) 2
Junction Temperature Tj 150 °C 2
Storage Temperature Tstg -55 150 °C 2
Collector Cutoff Current ICBO 1 μA VCB=40V, IE=0A 2
Emitter Cutoff Current IEBO 1 μA VEB=4V, IC=0A 2
DC Current Gain 1 (rank S) hFE1 140 280 VCE=2V, IC=100mA 2
DC Current Gain 2 hFE2 35 VCE=2V, IC=3A 2
Gain-Bandwidth Product fT 150 MHz VCE=10V, IC=50mA 2
Output Capacitance Cob 25 pF VCB=10V, f=1MHz 2
Collector-to-Emitter Saturation Voltage VCE(sat) 0.19 0.5 V IC=2A, IB=100mA 2
Base-to-Emitter Saturation Voltage VBE(sat) 0.94 1.2 V VCE=2A, IC=100mA 2
Collector-to-Base Breakdown Voltage V(BR)CBO 60 V IC=10μA, IE=0A 2
Collector-to-Emitter Breakdown Voltage V(BR)CEO 50 V IC=1mA, RBE=∞ 2
Emitter-to-Base Breakdown Voltage V(BR)EBO 6 V IE=10μA, IC=0A 2
Turn-ON Time ton 70 ns See specified Test Circuit. 2
Storage Time tstg 650 ns See specified Test Circuit. 2
Fall Time tf 35 ns See specified Test Circuit. 2

CAD (KiCad official)

  • Symbol: 2SD1624S-TD-E
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: 2sd1624s-td-e-etched.step / 2sd1624s-td-e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sd1624s-td-e.step / 2sd1624s-td-e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 826ad38aa638395b, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF