component
2SD1624S-TD-E
Public Made by Adomby adom
onsemi Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2SD1624S-TD-E
onsemi · Bipolar Transistors - BJT · SOT-89
2SD1624S-TD-E from onsemi, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base of the NPN transistor 2SD1624; VEBO max 6 V and IC max 3 A (6 A pulse). |
| 2 | Collector | passive | Collector of the NPN transistor 2SD1624; VCEO 50 V, VCBO 60 V, IC max 3 A (6 A pulse). |
| 3 | Emitter | passive | Emitter of the NPN transistor 2SD1624; VEBO max 6 V relative to base. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-89 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-to-Base Voltage | VCBO | 60 | V | Ta=25°C | 1 | ||
| Collector-to-Emitter Voltage | VCEO | 50 | V | Ta=25°C | 1 | ||
| Emitter-to-Base Voltage | VEBO | 6 | V | Ta=25°C | 1 | ||
| Collector Current | IC | 3 | A | Ta=25°C | 1 | ||
| Collector Current (Pulse) | ICP | 6 | A | Ta=25°C | 1 | ||
| Collector Dissipation | PC | 500 | mW | Ta=25°C | 2 | ||
| Collector Dissipation (ceramic substrate) | PC | 1.5 | W | When mounted on ceramic substrate (250mm2×0.8mm) | 2 | ||
| Junction Temperature | Tj | 150 | °C | 2 | |||
| Storage Temperature | Tstg | -55 | 150 | °C | 2 | ||
| Collector Cutoff Current | ICBO | 1 | μA | VCB=40V, IE=0A | 2 | ||
| Emitter Cutoff Current | IEBO | 1 | μA | VEB=4V, IC=0A | 2 | ||
| DC Current Gain 1 (rank S) | hFE1 | 140 | 280 | VCE=2V, IC=100mA | 2 | ||
| DC Current Gain 2 | hFE2 | 35 | VCE=2V, IC=3A | 2 | |||
| Gain-Bandwidth Product | fT | 150 | MHz | VCE=10V, IC=50mA | 2 | ||
| Output Capacitance | Cob | 25 | pF | VCB=10V, f=1MHz | 2 | ||
| Collector-to-Emitter Saturation Voltage | VCE(sat) | 0.19 | 0.5 | V | IC=2A, IB=100mA | 2 | |
| Base-to-Emitter Saturation Voltage | VBE(sat) | 0.94 | 1.2 | V | VCE=2A, IC=100mA | 2 | |
| Collector-to-Base Breakdown Voltage | V(BR)CBO | 60 | V | IC=10μA, IE=0A | 2 | ||
| Collector-to-Emitter Breakdown Voltage | V(BR)CEO | 50 | V | IC=1mA, RBE=∞ | 2 | ||
| Emitter-to-Base Breakdown Voltage | V(BR)EBO | 6 | V | IE=10μA, IC=0A | 2 | ||
| Turn-ON Time | ton | 70 | ns | See specified Test Circuit. | 2 | ||
| Storage Time | tstg | 650 | ns | See specified Test Circuit. | 2 | ||
| Fall Time | tf | 35 | ns | See specified Test Circuit. | 2 |
CAD (KiCad official)
- Symbol:
2SD1624S-TD-E - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2sd1624s-td-e-etched.step/2sd1624s-td-e-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sd1624s-td-e.step/2sd1624s-td-e.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (7 pp, sha256
826ad38aa638395b, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).