component
2SD1616AG-G-T92-K
Public Made by Adomby adom
UTC(Unisonic Tech) Bipolar Transistors - BJT, TO-92-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2SD1616AG-G-T92-K
UTC(Unisonic Tech) · Bipolar Transistors - BJT · TO-92-3
2SD1616AG-G-T92-K from UTC(Unisonic Tech), in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E | passive | Emitter terminal of the NPN transistor; the emitter-to-base voltage is rated at VEBO = 6 V maximum in the absolute maximum ratings. |
| 2 | C | passive | Collector terminal; for this 2SD1616A variant the collector-to-emitter voltage is rated at 60 V (VCEO) and the collector-to-base voltage at 120 V (VCBO), with DC collector current up to 1 A and pulse current up to 2 A. |
| 3 | B | passive | Base terminal; the datasheet gives base drive conditions of IB = 50 mA at IC = 1 A for saturation voltage measurements. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC(Unisonic Tech) |
| Package | TO-92-3 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector to Base Voltage (2SD1616A column) | VCBO | 120 | V | 3 | |||
| Collector to Emitter Voltage (2SD1616A column) | VCEO | 60 | V | 3 | |||
| Emitter to Base Voltage | VEBO | 6 | V | 3 | |||
| Collector Current DC | IC | 1 | A | 3 | |||
| Collector Current Pulse | ICM | 2 | A | Pulse width 10ms, duty cycle<50% (Note 2) | 3 | ||
| Total Power Dissipation | PC | 750 | mW | 3 | |||
| Junction Temperature | TJ | 150 | C | 3 | |||
| Storage Temperature | TSTG | -55 | 150 | C | 3 | ||
| Collector-Emitter Saturation Voltage | VCE (SAT) | 0.15 | 0.3 | V | IC=1A, IB=50mA | 3 | |
| Base-Emitter Saturation Voltage | VBE (SAT) | 0.9 | 1.2 | V | IC=1A, IB=50mA | 3 | |
| Base Emitter On Voltage | VBE (ON) | 600 | 640 | 700 | mV | VCE =2V, IC =50mA | 3 |
| Collector Cut-Off Current | ICBO | 100 | nA | VCB=60V | 3 | ||
| Emitter Cut-Off Current | IEBO | 100 | nA | VEB= 6V | 3 | ||
| DC Current Gain hFE1 | hFE1 | 135 | 600 | VCE =2V, IC =100mA | 3 | ||
| DC Current Gain hFE2 | hFE2 | 81 | VCE =2V, IC=1A | 3 | |||
| Transition Frequency | fT | 100 | 160 | MHz | VCE =2V, IC =100mA | 3 | |
| Output Capacitance | Cob | 19 | pF | VCB =10V, f =1MHz | 3 | ||
| Turn On Time | tON | 0.07 | μs | VCE =10V, IC =100mA | 3 | ||
| Storage Time | tSTG | 0.95 | μs | IB1 = -IB2 =10mA | 3 | ||
| Fall Time | tF | 0.07 | μs | VBE(OFF) = -2 ~ -3V | 3 |
CAD (KiCad official)
- Symbol:
2SD1616AG-G-T92-K - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92-3 (KiCad packages3D, STEP)
- 3D model files:
2sd1616ag-g-t92-k-etched.step/2sd1616ag-g-t92-k-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sd1616ag-g-t92-k.step/2sd1616ag-g-t92-k.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC(Unisonic Tech) datasheet (5 pp, sha256
399382c284d5c9f9, retrieved 2026-10-21, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 2SD1616AG-G-T92-K
**UTC(Unisonic Tech)** · Bipolar Transistors - BJT · TO-92-3
2SD1616AG-G-T92-K from UTC(Unisonic Tech), in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E | passive | Emitter terminal of the NPN transistor; the emitter-to-base voltage is rated at VEBO = 6 V maximum in the absolute maximum ratings. |
| 2 | C | passive | Collector terminal; for this 2SD1616A variant the collector-to-emitter voltage is rated at 60 V (VCEO) and the collector-to-base voltage at 120 V (VCBO), with DC collector current up to 1 A and pulse current up to 2 A. |
| 3 | B | passive | Base terminal; the datasheet gives base drive conditions of IB = 50 mA at IC = 1 A for saturation voltage measurements. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC(Unisonic Tech) |
| Package | TO-92-3 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector to Base Voltage (2SD1616A column) | VCBO | | | 120 | V | | 3 |
| Collector to Emitter Voltage (2SD1616A column) | VCEO | | | 60 | V | | 3 |
| Emitter to Base Voltage | VEBO | | | 6 | V | | 3 |
| Collector Current DC | IC | | | 1 | A | | 3 |
| Collector Current Pulse | ICM | | | 2 | A | Pulse width 10ms, duty cycle<50% (Note 2) | 3 |
| Total Power Dissipation | PC | | | 750 | mW | | 3 |
| Junction Temperature | TJ | | | 150 | C | | 3 |
| Storage Temperature | TSTG | -55 | | 150 | C | | 3 |
| Collector-Emitter Saturation Voltage | VCE (SAT) | | 0.15 | 0.3 | V | IC=1A, IB=50mA | 3 |
| Base-Emitter Saturation Voltage | VBE (SAT) | | 0.9 | 1.2 | V | IC=1A, IB=50mA | 3 |
| Base Emitter On Voltage | VBE (ON) | 600 | 640 | 700 | mV | VCE =2V, IC =50mA | 3 |
| Collector Cut-Off Current | ICBO | | | 100 | nA | VCB=60V | 3 |
| Emitter Cut-Off Current | IEBO | | | 100 | nA | VEB= 6V | 3 |
| DC Current Gain hFE1 | hFE1 | 135 | | 600 | | VCE =2V, IC =100mA | 3 |
| DC Current Gain hFE2 | hFE2 | 81 | | | | VCE =2V, IC=1A | 3 |
| Transition Frequency | fT | 100 | 160 | | MHz | VCE =2V, IC =100mA | 3 |
| Output Capacitance | Cob | | 19 | | pF | VCB =10V, f =1MHz | 3 |
| Turn On Time | tON | | 0.07 | | μs | VCE =10V, IC =100mA | 3 |
| Storage Time | tSTG | | 0.95 | | μs | IB1 = -IB2 =10mA | 3 |
| Fall Time | tF | | 0.07 | | μs | VBE(OFF) = -2 ~ -3V | 3 |
## CAD (KiCad official)
- Symbol: `2SD1616AG-G-T92-K`
- Footprint: `Package_TO_SOT_THT:TO-92_Inline`
- 3D model: TO-92-3 (KiCad packages3D, STEP)
- 3D model files: `2sd1616ag-g-t92-k-etched.step` / `2sd1616ag-g-t92-k-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sd1616ag-g-t92-k.step` / `2sd1616ag-g-t92-k.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UTC(Unisonic Tech) datasheet](docs/2sd1616ag-g-t92-k-datasheet.pdf) (5 pp, sha256 `399382c284d5c9f9`, retrieved 2026-10-21, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/2sd1616ag-g-t92-k-datasheet.pdf)