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2SD1616AG-G-T92-K

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UTC(Unisonic Tech) Bipolar Transistors - BJT, TO-92-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SD1616AG-G-T92-K

UTC(Unisonic Tech) · Bipolar Transistors - BJT · TO-92-3

2SD1616AG-G-T92-K from UTC(Unisonic Tech), in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E passive Emitter terminal of the NPN transistor; the emitter-to-base voltage is rated at VEBO = 6 V maximum in the absolute maximum ratings.
2 C passive Collector terminal; for this 2SD1616A variant the collector-to-emitter voltage is rated at 60 V (VCEO) and the collector-to-base voltage at 120 V (VCBO), with DC collector current up to 1 A and pulse current up to 2 A.
3 B passive Base terminal; the datasheet gives base drive conditions of IB = 50 mA at IC = 1 A for saturation voltage measurements.

Key specifications

Parameter Value
Manufacturer UTC(Unisonic Tech)
Package TO-92-3
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector to Base Voltage (2SD1616A column) VCBO 120 V 3
Collector to Emitter Voltage (2SD1616A column) VCEO 60 V 3
Emitter to Base Voltage VEBO 6 V 3
Collector Current DC IC 1 A 3
Collector Current Pulse ICM 2 A Pulse width 10ms, duty cycle<50% (Note 2) 3
Total Power Dissipation PC 750 mW 3
Junction Temperature TJ 150 C 3
Storage Temperature TSTG -55 150 C 3
Collector-Emitter Saturation Voltage VCE (SAT) 0.15 0.3 V IC=1A, IB=50mA 3
Base-Emitter Saturation Voltage VBE (SAT) 0.9 1.2 V IC=1A, IB=50mA 3
Base Emitter On Voltage VBE (ON) 600 640 700 mV VCE =2V, IC =50mA 3
Collector Cut-Off Current ICBO 100 nA VCB=60V 3
Emitter Cut-Off Current IEBO 100 nA VEB= 6V 3
DC Current Gain hFE1 hFE1 135 600 VCE =2V, IC =100mA 3
DC Current Gain hFE2 hFE2 81 VCE =2V, IC=1A 3
Transition Frequency fT 100 160 MHz VCE =2V, IC =100mA 3
Output Capacitance Cob 19 pF VCB =10V, f =1MHz 3
Turn On Time tON 0.07 μs VCE =10V, IC =100mA 3
Storage Time tSTG 0.95 μs IB1 = -IB2 =10mA 3
Fall Time tF 0.07 μs VBE(OFF) = -2 ~ -3V 3

CAD (KiCad official)

  • Symbol: 2SD1616AG-G-T92-K
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92-3 (KiCad packages3D, STEP)
  • 3D model files: 2sd1616ag-g-t92-k-etched.step / 2sd1616ag-g-t92-k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sd1616ag-g-t92-k.step / 2sd1616ag-g-t92-k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC(Unisonic Tech) datasheet (5 pp, sha256 399382c284d5c9f9, retrieved 2026-10-21, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF