# 2SD1616A TB

**YFW** · Bipolar (BJT) · TO-92

2SD1616A TB from YFW, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EMITTER | passive | Emitter of the NPN transistor, with the datasheet limits of VEBO 6 V maximum and collector current IC 1 A maximum. |
| 2 | COLLECTOR | passive | Collector of the NPN transistor, rated for VCBO 120 V, VCEO 60 V, IC 1 A and collector power dissipation PC 0.75 W. |
| 3 | BASE | passive | Base of the NPN transistor, driven with IB = 50 mA to reach VCE(sat) 0.3 V at IC = 1 A, where VBE(sat) is 1.2 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | YFW |
| Package | TO-92 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO |  |  | 120 | V |  | 1 |
| Collector-Emitter Voltage | VCEO |  |  | 60 | V |  | 1 |
| Emitter-Base Voltage | VEBO |  |  | 6 | V |  | 1 |
| Collector Current | IC |  |  | 1 | A |  | 1 |
| Collector Power Dissipation | PC |  |  | 0.75 | W |  | 1 |
| Junction Temperature | Tj |  |  | 150 | ℃ |  | 1 |
| Storage Temperature | Tstg | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance From Junction To Ambient | RθJA |  |  | 167 | ℃/W |  | 1 |
| Collector-base breakdown voltage | V(BR)CBO | 120 |  |  | V | IC= 10μA , IE=0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | 60 |  |  | V | IC= 2mA , IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | 6 |  |  | V | IE= 10μA, IC=0 | 1 |
| Collector cut-off current | ICBO |  |  | 0.1 | μA | VCB=60V, IE=0 | 1 |
| Emitter cut-off current | IEBO |  |  | 0.1 | μA | VEB=6V, IC=0 | 1 |
| DC current gain (rank range) | hFE1 | 135 |  | 600 |  | VCE=2 V, IC= 100mA | 1 |
| DC current gain | hFE2 | 81 |  |  |  | VCE=2 V, IC= 1A | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | 0.3 | V | IC= 1A, IB=50mA | 1 |
| Base-emitter saturation voltage | VBE(sat) |  |  | 1.2 | V | IC= 1A, IB=50mA | 1 |
| Base-emitter voltage | VBE | 0.6 |  | 0.7 | V | VCE= 2V, IC=50mA | 1 |
| Transition frequency | fT | 100 |  |  | MHz | VCE=2 V, IC= 100mA | 1 |
| Output capacitance | Cob |  |  | 19 | pF | VCB=10 V,IE= 0, f=1MHz | 1 |
| Turn on time | ton |  |  | 0.07 | μs | Vcc=10V, IC=100mA, IB1=-IB2=10mA | 1 |
| Storage time | tS |  |  | 0.95 | μs |  | 1 |
| Fall time | tF |  |  | 0.07 | μs |  | 1 |

## CAD (KiCad official)

- Symbol: `2SD1616A TB`
- Footprint: `Package_TO_SOT_THT:TO-92_Inline`
- 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files: `2sd1616a-tb-etched.step` / `2sd1616a-tb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sd1616a-tb.step` / `2sd1616a-tb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [YFW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8600552972317171712) (3 pp, sha256 `ddc50fbed9e8eb5a`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/2sd1616a-tb-datasheet.pdf)