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2SD1616A TB

Public Made by Adom

by adom

YFW Bipolar (BJT), TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SD1616A TB

YFW · Bipolar (BJT) · TO-92

2SD1616A TB from YFW, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 EMITTER passive Emitter of the NPN transistor, with the datasheet limits of VEBO 6 V maximum and collector current IC 1 A maximum.
2 COLLECTOR passive Collector of the NPN transistor, rated for VCBO 120 V, VCEO 60 V, IC 1 A and collector power dissipation PC 0.75 W.
3 BASE passive Base of the NPN transistor, driven with IB = 50 mA to reach VCE(sat) 0.3 V at IC = 1 A, where VBE(sat) is 1.2 V.

Key specifications

Parameter Value
Manufacturer YFW
Package TO-92
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 120 V 1
Collector-Emitter Voltage VCEO 60 V 1
Emitter-Base Voltage VEBO 6 V 1
Collector Current IC 1 A 1
Collector Power Dissipation PC 0.75 W 1
Junction Temperature Tj 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1
Thermal Resistance From Junction To Ambient RθJA 167 ℃/W 1
Collector-base breakdown voltage V(BR)CBO 120 V IC= 10μA , IE=0 1
Collector-emitter breakdown voltage V(BR)CEO 60 V IC= 2mA , IB=0 1
Emitter-base breakdown voltage V(BR)EBO 6 V IE= 10μA, IC=0 1
Collector cut-off current ICBO 0.1 μA VCB=60V, IE=0 1
Emitter cut-off current IEBO 0.1 μA VEB=6V, IC=0 1
DC current gain (rank range) hFE1 135 600 VCE=2 V, IC= 100mA 1
DC current gain hFE2 81 VCE=2 V, IC= 1A 1
Collector-emitter saturation voltage VCE(sat) 0.3 V IC= 1A, IB=50mA 1
Base-emitter saturation voltage VBE(sat) 1.2 V IC= 1A, IB=50mA 1
Base-emitter voltage VBE 0.6 0.7 V VCE= 2V, IC=50mA 1
Transition frequency fT 100 MHz VCE=2 V, IC= 100mA 1
Output capacitance Cob 19 pF VCB=10 V,IE= 0, f=1MHz 1
Turn on time ton 0.07 μs Vcc=10V, IC=100mA, IB1=-IB2=10mA 1
Storage time tS 0.95 μs 1
Fall time tF 0.07 μs 1

CAD (KiCad official)

  • Symbol: 2SD1616A TB
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: 2sd1616a-tb-etched.step / 2sd1616a-tb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sd1616a-tb.step / 2sd1616a-tb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: YFW datasheet (3 pp, sha256 ddc50fbed9e8eb5a, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF