component
2SB772SQ
Public Made by Adomby adom
JUXING Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2sb772sq: specified limits as data (metadata.characteristics, 22 rows from the datasheet)
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2SB772SQ
JUXING · Bipolar (BJT) · SOT-89
2SB772SQ from JUXING, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | passive | Base terminal of the PNP transistor; continuous base current is rated at -IB 0.6 A in the absolute maximum ratings. |
| 2 | Collector | passive | Collector terminal; continuous collector current is rated at -IC 3 A and peak collector current at -ICP 7 A, with -VCBO 40 V and -VCEO 30 V. |
| 3 | E | passive | Emitter terminal; emitter-to-base voltage is rated at -VEBO 5 V in the absolute maximum ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JUXING |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector to Base Voltage | -VCBO | 40 | V | 1 | |||
| Collector to Emitter Voltage | -VCEO | 30 | V | 1 | |||
| Emitter to Base Voltage | -VEBO | 5 | V | 1 | |||
| Collector Current-Continuous | -IC | 3 | A | 1 | |||
| Peak Collector Current | -ICP | 7 | A | 1 | |||
| Base Current - Continuous | -IB | 0.6 | A | 1 | |||
| Total Power Dissipation | PD | 1 | W | 1 | |||
| Total Power Dissipation (Tc=25℃) | PD | 10 | W | Tc=25℃ | 1 | ||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| DC Current Gain (at -IC = 20 mA, group unspecified) | hFE | 30 | at -VCE = 2 V, -IC = 20 mA | 2 | |||
| DC Current Gain Group R | hFE | 60 | 120 | at -VCE = 2 V, -IC = 1 A, Current Gain Group R | 2 | ||
| DC Current Gain Group Q | hFE | 100 | 200 | at -VCE = 2 V, -IC = 1 A, Current Gain Group Q | 2 | ||
| DC Current Gain Group P | hFE | 160 | 320 | at -VCE = 2 V, -IC = 1 A, Current Gain Group P | 2 | ||
| DC Current Gain Group E | hFE | 200 | 400 | at -VCE = 2 V, -IC = 1 A, Current Gain Group E | 2 | ||
| Collector Base Cutoff Current | -ICBO | 1 | µA | at -VCB = 30 V | 2 | ||
| Emitter Base Cutoff Current | -IEBO | 1 | µA | at -VEB = 3 V | 2 | ||
| Collector Base Breakdown Voltage | -V(BR)CBO | 40 | V | at -IC = 1 mA | 2 | ||
| Collector Emitter Breakdown Voltage | -V(BR)CEO | 30 | V | at -IC = 1 mA | 2 | ||
| Emitter Base Breakdown Voltage | -V(BR)EBO | 5 | V | at -IE = 1 mA | 2 | ||
| Collector Emitter Saturation Voltage | -VCE(sat) | 0.5 | V | at -IC = 2 A, -IB = 200 mA | 2 | ||
| Base Emitter Saturation Voltage | -VBE(sat) | 2 | V | at -IC = 2 A, -IB = 200 mA | 2 |
CAD (KiCad official)
- Symbol:
2SB772SQ - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2sb772sq-etched.step/2sb772sq-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sb772sq.step/2sb772sq.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: JUXING datasheet (2 pp, sha256
b86dd2d826e49b2c, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 2SB772SQ
**JUXING** · Bipolar (BJT) · SOT-89
2SB772SQ from JUXING, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | passive | Base terminal of the PNP transistor; continuous base current is rated at -IB 0.6 A in the absolute maximum ratings. |
| 2 | Collector | passive | Collector terminal; continuous collector current is rated at -IC 3 A and peak collector current at -ICP 7 A, with -VCBO 40 V and -VCEO 30 V. |
| 3 | E | passive | Emitter terminal; emitter-to-base voltage is rated at -VEBO 5 V in the absolute maximum ratings. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JUXING |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector to Base Voltage | -VCBO | | | 40 | V | | 1 |
| Collector to Emitter Voltage | -VCEO | | | 30 | V | | 1 |
| Emitter to Base Voltage | -VEBO | | | 5 | V | | 1 |
| Collector Current-Continuous | -IC | | | 3 | A | | 1 |
| Peak Collector Current | -ICP | | | 7 | A | | 1 |
| Base Current - Continuous | -IB | | | 0.6 | A | | 1 |
| Total Power Dissipation | PD | | | 1 | W | | 1 |
| Total Power Dissipation (Tc=25℃) | PD | | | 10 | W | Tc=25℃ | 1 |
| Junction Temperature | TJ | | | 150 | ℃ | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| DC Current Gain (at -IC = 20 mA, group unspecified) | hFE | 30 | | | | at -VCE = 2 V, -IC = 20 mA | 2 |
| DC Current Gain Group R | hFE | 60 | | 120 | | at -VCE = 2 V, -IC = 1 A, Current Gain Group R | 2 |
| DC Current Gain Group Q | hFE | 100 | | 200 | | at -VCE = 2 V, -IC = 1 A, Current Gain Group Q | 2 |
| DC Current Gain Group P | hFE | 160 | | 320 | | at -VCE = 2 V, -IC = 1 A, Current Gain Group P | 2 |
| DC Current Gain Group E | hFE | 200 | | 400 | | at -VCE = 2 V, -IC = 1 A, Current Gain Group E | 2 |
| Collector Base Cutoff Current | -ICBO | | | 1 | µA | at -VCB = 30 V | 2 |
| Emitter Base Cutoff Current | -IEBO | | | 1 | µA | at -VEB = 3 V | 2 |
| Collector Base Breakdown Voltage | -V(BR)CBO | 40 | | | V | at -IC = 1 mA | 2 |
| Collector Emitter Breakdown Voltage | -V(BR)CEO | 30 | | | V | at -IC = 1 mA | 2 |
| Emitter Base Breakdown Voltage | -V(BR)EBO | 5 | | | V | at -IE = 1 mA | 2 |
| Collector Emitter Saturation Voltage | -VCE(sat) | | | 0.5 | V | at -IC = 2 A, -IB = 200 mA | 2 |
| Base Emitter Saturation Voltage | -VBE(sat) | | | 2 | V | at -IC = 2 A, -IB = 200 mA | 2 |
## CAD (KiCad official)
- Symbol: `2SB772SQ`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `2sb772sq-etched.step` / `2sb772sq-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sb772sq.step` / `2sb772sq.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [JUXING datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590393584156508160) (2 pp, sha256 `b86dd2d826e49b2c`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/2sb772sq-datasheet.pdf)